Structural and optical properties of in situ Eu-doped ZnCdO/ZnMgO superlattices grown by plasma-assisted molecular beam epitaxy

Abinash Adhikari; Adrian Kozanecki; Aleksandra Wierzbicka; Anastasiia Lysak; Ewa Przezdziecka; Michal Szot; Piotr Dlzewski; Rafal Jakiela; Sergio Magalhaes; Zeinab Khosravizadeh

REVIEW 4 major objections 6 minor 53 references

Structural and optical properties of in situ Eu-doped ZnCdO/ZnMgO superlattices grown by plasma-assisted molecular beam epitaxy

T0 review · 4 major / 6 minor · reviewed 2026-08-08 · deepseek-v4-flash

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Pith's one-line read In situ europium doping of ZnCdO quantum wells in ZnCdO/ZnMgO superlattices produces optically active Eu3+ centers emitting red light at about 616 nm, and annealing at 700 °C strengthens this emission while hotter annealing quenches it.

desk verdict A competent MBE growth study of a genuinely new Eu-doped ZnCdO/ZnMgO superlattice system, but the annealing-dependent red emission claim rests on normalized CL spectra and a partly self-referential correlation. read the letter →

arxiv 2502.08410 v1 pith:RL4CLPB5 submitted 2025-02-12 cond-mat.mtrl-sci cond-mat.mes-hall

Anastasiia Lysak , Aleksandra Wierzbicka , Sergio Magalhaes , Piotr Dlzewski , Rafal Jakiela , Michal Szot , Zeinab Khosravizadeh , Abinash Adhikari

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Adrian Kozanecki Ewa Przezdziecka

This is my paper · ORCID

classification cond-mat.mtrl-scicond-mat.mes-hall PACS 78.60.Hk81.15.Hi

keywords europiumdopingzincoxidesuperlatticescathodoluminescencemolecularbeamepitaxyrare-earthluminescenceenergytransferrapidthermalannealingquantumwells

verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

In situ europium doping of ZnCdO quantum wells in ZnCdO/ZnMgO superlattices, grown by plasma-assisted molecular beam epitaxy, is shown to produce optically active Eu$^{3+}$ ions that emit red light at about 616 nm. The paper reports that a 700 °C anneal in oxygen increases the intensity of this red line, while annealing at 800 °C or 900 °C reduces it. From cathodoluminescence spectra, the authors conclude that native structural defects in the ZnCdO host participate in transferring excitation energy to Eu$^{3+}$. The work establishes that red-emitting ZnO-based quantum structures can be made by in situ doping, with post-growth annealing as a tuning knob for emission intensity.

What carries the argument

The central object is the Eu$^{3+}$ intra-4f transition $^5D_0 \rightarrow {}^7F_2$ at ~616 nm, a spectroscopic fingerprint of optically active europium that the CL measurements track before and after annealing. The argument's mechanism is the correlation between the integrated area of that line and the ratio of near-band-edge to deep-level emission ($I_{\mathrm{NBE}}/I_{\mathrm{DLE}}$): the red emission peaks where the ratio is lowest, which the authors take to mean that deep-level defects carry excitation from the host to the Eu ions. Structural tools (XRD, TEM, SIMS) establish that the periodic superlattice is intact and locate the Eu in the quantum wells, so the optical signal can be tied to the designed structure.

What would settle it

Measure the absolute, unnormalized cathodoluminescence intensities of the 616 nm line and the deep-level band on two superlattices with identical sublayer thicknesses and compositions but deliberately different defect densities (for instance, grown with different oxygen plasma fluxes), and compare them across the 700 °C anneal. If the sample with more defects does not show stronger or more annealing-enhanced 616 nm emission, the defect-mediated energy-transfer claim fails.

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Extended reading notes

Core claim

The central discovery is that Eu introduced during growth into the ZnCdO wells of {ZnCdO/ZnMgO}$_{22}$ superlattices forms optically active Eu$^{3+}$ centers whose characteristic $^5D_0 \rightarrow {}^7F_2$ emission appears at ~616 nm in as-grown and annealed samples. The integrated area of this line increases after annealing at 700 °C and decreases after annealing at higher temperatures. In the normalized cathodoluminescence spectra, the strongest red emission coincides with the lowest near-band-edge to deep-level emission ratio, which the authors interpret as evidence that native defects mediate energy transfer from the ZnCdO host matrix to Eu$^{3+}$. The superlattice with thinner sublayers and higher magnesium content (sample B) shows more intense red emission, attributed to a combination of quantum confinement, higher Mg content, and a larger density of structural defects.

Load-bearing premise

The load-bearing premise is that the match between strong deep-level emission and strong 616 nm luminescence in normalized cathodoluminescence spectra really shows native defects transferring energy to Eu$^{3+}$, rather than reflecting other differences between the two samples, such as layer thickness, magnesium content, surface roughness, or a normalization artifact.

Editorial extensions

If this is right

If correct, in situ Eu doping can produce red-emitting ZnO-based quantum structures without ion implantation, avoiding the lattice damage that implantation causes.
The 700 °C annealing optimum provides a simple post-growth step for maximizing Eu$^{3+}$ emission, and the drop at higher temperatures sets a thermal budget for device processing.
Thinner quantum wells and higher Mg content in the barriers correlate with stronger red emission, offering a design direction for brighter red emitters in this material system.
The proposed defect-mediated energy transfer implies that intentional defect engineering, such as growth stoichiometry control, could be used to adjust Eu emission efficiency.
The SIMS interdiffusion observed after annealing at 900 °C shows that structural integrity of the superlattice limits how hot the annealing step can be.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

An implication the paper leaves implicit is that the defect-mediated transfer picture predicts a monotonic relationship between oxygen-vacancy concentration and 616 nm yield; growing samples under lower oxygen plasma flux, which should raise vacancy density, would be a direct test.
Because the CL spectra are normalized, the paper cannot exclude the possibility that absolute Eu emission falls monotonically with annealing and only the deep-level band falls faster; absolute-intensity measurements would settle whether the 700 °C step truly brightens the red line.
The same in situ doping plus annealing recipe could be extended to other rare earths such as Tb or Er in ZnO-based superlattices, where the corresponding intra-4f lines would add green and infrared emitter channels.
If the stronger emission from the thinner-superlattice sample comes from quantum confinement rather than defects, then varying well width at fixed defect density would separate these two mechanisms; the paper's current data cannot distinguish them.

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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Desk Editor's Note

read the letter

The short version: this is a serious experimental report on a material combination I haven't seen before—in situ Eu-doped ZnCdO/ZnMgO superlattices grown by MBE—and the structural characterization is mostly careful. But the central optical claim, that 700°C annealing enhances Eu3+ emission and that native defects mediate energy transfer, is weaker than the abstract suggests, mainly because the CL analysis uses normalized spectra in a way that can manufacture the reported trend.

What's genuinely new: the material system itself. The growth and standard characterization (TEM, XRD, SIMS, CL, UV-Vis) are competently executed. TEM shows periodic layers, XRD confirms wurtzite phase with satellite peaks for the better sample, and SIMS shows Eu/Cd/Mg oscillations that progressively wash out with annealing. The 616 nm Eu3+ line is clearly present, and that observation is probably robust.

Now the soft spots. First, a concrete internal inconsistency: Table 1 gives TEM thicknesses for sample A as 13/12.5 nm but XRD-simulated values as 10.5/10.5 nm, while the text claims they agree. That needs fixing. Second, and more important, the optical analysis. Figure 6 spectra are normalized; Figure 7 plots INBE/IDLE and the integrated 5D0→7F2 area from those same normalized spectra. If normalization is to the NBE peak, then a post-annealing drop in NBE—which the paper itself documents via FWHM broadening and SIMS interdiffusion—will inflate the normalized Eu area even if absolute Eu emission is unchanged. So the 700°C enhancement and the 800/900°C reduction could track NBE evolution rather than real Eu activation. The stress-test note is on point here. Third, the DLE band spans 430–660 nm, and the 616 nm Eu line sits inside it, so the inverse correlation between INBE/IDLE and the Eu peak area is partly self-correlation, not independent evidence for defect participation. Fourth, the sample A/B comparison is underdetermined: the two structures differ in sublayer thickness, Mg content, roughness, and defect density simultaneously, so attributing the stronger red emission to thinner layers or defects specifically is not justified by the data.

Who gets value from this: researchers working on ZnO-based heterostructures and rare-earth doping, especially those interested in growth recipes and structural data. It's a niche contribution, no device performance or efficiency numbers, and the optical conclusions need re-examination with absolute intensity measurements or at least a fixed reference.

Recommendation: yes, send it to peer review. The material novelty and the amount of solid structural work justify referee time, but the referee should demand absolute CL intensities, an explanation of the normalization, and a fix for the Table 1 discrepancy. If those can be addressed, this would be a reasonable materials report.

Referee Report

4 major / 6 minor

Summary. The manuscript reports the growth by plasma-assisted MBE of in situ Eu-doped ZnCdO/ZnMgO superlattices with two different sublayer thicknesses (samples A and B) on m-plane sapphire, and their structural and optical characterization by TEM, XRD, SIMS, UV–Vis spectroscopy, and temperature-dependent cathodoluminescence. The main claims are that the superlattices have wurtzite structure with periodic layering; that CL spectra show the Eu3+ 5D0→7F2 emission at about 616 nm in both as-grown and annealed samples; that annealing at 700 °C increases the red emission intensity while annealing at 800 and 900 °C reduces it; and that native defects participate in energy transfer from the ZnCdO host to Eu3+ ions. The structural observations are supported by TEM images, XRD simulations, and SIMS profiles, but the optical annealing trend and the defect-mediated energy-transfer interpretation rest on normalized CL spectra and on a comparison between two samples that differ in multiple structural parameters simultaneously.

Significance. If the central claims hold, the paper provides a useful demonstration that in situ Eu doping during MBE growth produces optically active Eu3+ centers in ZnCdO/ZnMgO superlattices, and it identifies a post-growth annealing window (700 °C) that enhances the red emission. The strength of the work is the multimodal characterization: TEM/STEM with EDX, HRXRD with dynamical simulations, SIMS depth profiling, and CL all point consistently to well-formed periodic structures in sample A and a more disordered structure in sample B. The paper also gives a direct observation of the characteristic 616 nm Eu3+ transition, which is a concrete experimental result. The weaker part is the quantitative interpretation of the CL data: the annealing dependence and the defect-mediated energy-transfer conclusion are not yet demonstrated at the level the abstract and conclusions assert, because they rely on normalized spectra and a confounded sample comparison.

major comments (4)

[Table 1 and Sections 3.1–3.2] There is an internal inconsistency in the reported layer thicknesses for sample A: TEM gives h_ZnCdO:Eu = 13 nm and h_ZnMgO = 12.5 nm, while the XRD-simulated values are 10.5 nm and 10.5 nm, respectively. The text states that the XRD values 'agree well' with the TEM values, but this is not the case for either sublayer. Because later arguments compare samples A and B in terms of sublayer thickness, quantum effects, and structural quality, the correct thickness values need to be established and the discrepancy explained (for example, averaging over nonuniform layers, measurement area, or simulation ambiguity). This is load-bearing for the sample comparison and should be fixed before publication.
[Section 3.4, Figs. 6 and 7] The central claim that annealing at 700 °C increases the Eu3+ 5D0→7F2 emission is based on CL spectra that are explicitly normalized, but no absolute or internally calibrated integrated intensities are reported. Since the NBE intensity changes with annealing temperature and the spectra are normalized to the dominant NBE peak, a decrease in NBE intensity after annealing would inflate the normalized Eu feature even if the absolute Eu emission was unchanged. The apparent reduction at 800 and 900 °C could likewise track NBE evolution rather than real Eu3+ activation. The authors should present absolute CL intensities, or at least a quantitative comparison using unnormalized spectra acquired under identical conditions, to support the annealing trend stated in the abstract and conclusions.
[Section 3.4, Fig. 7] The evidence for defect-mediated energy transfer is partly a self-correlation. The DLE band spans roughly 430–660 nm and therefore overlaps the 616 nm Eu3+ line, so the integrated 5D0→7F2 peak area is not independent of the DLE intensity. In addition, the INBE/IDLE ratio and the red peak area are both derived from the same normalized spectra, making the reported inverse relation between them weaker evidence than claimed. The authors should exclude the Eu3+ lines from the DLE integration or otherwise quantify the overlap, and ideally provide an independent measure of defect concentration (for example, from positron annihilation or EPR) before concluding that native defects are actively involved in energy transfer.
[Section 3.4 and Conclusions] The conclusion that 'red emission is more effective for superlattices with thinner sublayers' and that this is related to defects is underdetermined by the two-sample comparison. Sample A and sample B differ simultaneously in sublayer thickness, Mg content, surface roughness (14.34 nm vs 32.88 nm), twin density (I10.0/I10.3 ratio ~314 vs ~10), and Urbach energy (214 vs 233 meV). Any one of these differences, or their combination, could be responsible for the stronger Eu3+ emission in sample B. At minimum, the claim should be presented as a correlation rather than a causal demonstration, and an explicit caveat about the confounded parameters should be added.

minor comments (6)

[Section 3] The section numbering is duplicated: both the XRD analysis and the band-gap subsection are labeled '3.2'. The later subsections should be renumbered sequentially.
[Fig. 4 caption] The caption appears to be truncated or mislabeled: it refers to '{ZnCdO:Eu/ZnMgO}22 and {ZnCdO:Eu/ZnMgO}22 SLs' without distinguishing the two samples. Please correct the caption so the reader knows which panel corresponds to sample A and which to sample B.
[Section 3.1] The phrase 'a larger number of vertical blacks about 50 nm wide' should read 'vertical blocks'; this typo occurs in the description of the STEM images.
[Acknowledgements] There are spelling errors in the acknowledgements: 'suporrted' should be 'supported' and 'M. Schot' should be 'M. Szot' to match the author list.
[References] Reference [28] is incomplete: 'H. Du, 2018' lacks a title, journal, or other bibliographic information. Please provide a complete reference.
[Fig. 7] The figure shows data points without error bars or an indication of measurement reproducibility. Adding error bars or stating the uncertainty in the integrated peak areas would help the reader judge whether the differences between annealing temperatures are significant.

Circularity Check

0 steps flagged · score 0.0 of 10

No significant circularity: the central Eu emission and annealing-trend claims are direct measurements, and the supporting structural/optical analyses do not reduce to fitted inputs.

full rationale

The paper is an experimental characterization study. The 616 nm Eu3+ 5D0→7F2 emission is directly observed in CL spectra, not derived from a model or from parameters fitted to the same emission. XRD sublayer thicknesses obtained with MROX simulations are cross-checked against independent TEM measurements (Table 1), and no later claim treats those fitted thicknesses as a predicted output. The Tauc and Urbach analyses are standard extraction procedures from transmission data, and the sample A/B band-gap comparison follows from measured spectra rather than from an input containing the conclusion. The defect-mediated energy-transfer interpretation is based on a correlation between the INBE/IDLE ratio and the integrated Eu peak area (Fig. 7), but the paper does not define the Eu peak area as equivalent to IDLE, nor does any equation make the correlation true by construction; the possible normalization artifact is a robustness/correctness concern, not circularity. Self-citations to prior work on m-plane ZnO twins and Eu-doped ZnO structures are contextual and are not load-bearing for the present growth, structural, and luminescence results, which are supported by in-paper TEM, XRD, SIMS, and CL data. No load-bearing step reduces to its own input, so the circularity score is 0.

Assumptions & free parameters 3 free parameters · 4 assumptions · 0 invented entities

The central claims rest on standard materials characterization assumptions. The main non-empirical inputs are spectral assignments and the defect-mediated energy-transfer hypothesis, both reasonable but not directly proven. No invented entities are introduced.

free parameters (3)

XRD-simulated sublayer thicknesses = sample A: 10.5 nm ZnCdO:Eu / 10.5 nm ZnMgO; sample B: 10.0 / 10.0 nm
Fitted with MROX software to reproduce 2theta-omega scans; used to characterize the superlattice periodicity.
Optical band gap Eg = 3.318 eV (sample A), 3.306 eV (sample B)
Extrapolated from Tauc plots of transmission data; reported as an optical characterization result.
Urbach energy EU = 214 meV (sample A), 233 meV (sample B)
Extracted from the slope of ln(alpha) versus photon energy; used as a disorder metric.

assumptions (4)

domain assumption The 616 nm emission line is assigned to the Eu3+ 5D0 to 7F2 intra-4f transition.
Assignment follows standard Eu3+ reference wavelengths; no high-resolution or excitation-resolved spectroscopy is used in this paper.
domain assumption The increase of lattice parameters indicates Eu ions substitute on Zn2+ sites.
The text infers substitution from lattice expansion and literature (Kumar et al., ref 5); no direct site determination is reported.
ad hoc to paper Native defects in the ZnO host mediate energy transfer to Eu3+.
Proposed to explain the anti-correlation between INBE/IDLE and Eu peak area; it is a hypothesis, not a measured transfer path.
domain assumption MROX based dynamical XRD simulation correctly reproduces the superlattice structure.
The fit is used to extract sublayer thicknesses; the internal discrepancy with TEM in Table 1 weakens this assumption.

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Cite this review

Pith. "Pith review of Structural and optical properties of in situ Eu-doped ZnCdO/ZnMgO superlattices grown by plasma-assisted molecular beam epitaxy." pith.science (2026). https://pith.science/paper/RL4CLPB5

@misc{pith2026250208410,
  author       = {Pith},
  title        = {Pith review of: Structural and optical properties of in situ Eu-doped ZnCdO/ZnMgO superlattices grown by plasma-assisted molecular beam epitaxy},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/RL4CLPB5}},
  note         = {Machine review of arXiv:2502.08410}
}

read the original abstract

In situ Eu-doped ZnCdO-ZnMgO superlattices with varying ZnCdO:Eu and ZnMgO sublayers thicknesses were deposited by plasma assisted molecular beam epitaxy.

Figures

Figures reproduced from arXiv: 2502.08410 by the authors.

**Figure 5.** SIMS depth profiles of as-grown and annealed at different temperatures SLs: (a) {ZnCdO:Eu13nm/ZnMgO12.5nm}22 SL and (b) {ZnCdO:Eu10.5nm/ZnMgO10nm}22 [PITH_FULL_IMAGE:figures/full_fig_p006_5.png] view at source ↗

**Figure 6.** also shows the typical peak positions of the Eu3+ emission due to the 5D0 → 7F0,1,2,3,4 intra-4f-shell transitions (580, 590, 616, 653, and 703 nm)[14] . The red emission line at ~616 nm due to the 5D0 → 7F2 stimulated electric dipole transition mechanism dominates in all samples[5,13]. The intensity of 5D0 → 7F2 transition increases as the symmetry of the Eu3+ centers decreases[5]. The appearance of characteristic … view at source ↗

Figures from the paper (3 more)

**Figure 7.** Figure 7: INBE⁄IDLE ratio and integrated 5D0 → 7F2 peak area as a function of annealing temperature [PITH_FULL_IMAGE:figures/full_fig_p008_7.png]

**Figure 8.** Figure 8: Schematic band diagram of in situ Eu-doped {ZnCdO/ZnMgO}22 SLs [PITH_FULL_IMAGE:figures/full_fig_p008_8.png]

**Figure 9.** Figure 9: The CIE chromaticity diagram for in situ Eu-doped {ZnCdO/ZnMgO}22 SLs [PITH_FULL_IMAGE:figures/full_fig_p009_9.png]

Discussion (0). Continue with ORCID to comment.

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Works this paper leans on

53 extracted references · 51 canonical work pages

[1]

Introduction Wide-band gap (WBG) semiconductors doped with rare earth (RE) elements such as Ce, Er, Eu, Tb, etc., have become the subject of considerable attentio n due to their unique properties and potential for use in a wide range of applications [1–4]. Among RE elements, Europium (Eu) exhibits distinctive luminescence characteristics, in particular re...

work page
[2]

0) substrates by plasma assisted molecular beam epitaxy (PA -MBE) in a Riber Compact 21 system

Experimental In-situ Eu-doped ZnCdO/ZnMgO superlattices (SLs) with varying sublayer thicknesses were grown on commercially available m-plane sapphire (10. 0) substrates by plasma assisted molecular beam epitaxy (PA -MBE) in a Riber Compact 21 system. Before growt h, the m-plane sapphire (Al 2O3) substrates were chemically cleaned in a H 2SO4:H2O2 (1:1) mi...

work page
[3]

The images demonstrate a well-defined periodic layered structures consisting of arrays of bright and dark stripes corresponding to ZnCdO:Eu QWs and ZnMgO barriers, respectively

Results 3.1 TEM analysis Cross-sectional high-angle annular dark-field scanning transmission electron microscopy (HAADF/STEM) images of as -grown Eu-doped {ZnCdO/ZnMgO}22 SLs samples A and B are shown in Fig 1. The images demonstrate a well-defined periodic layered structures consisting of arrays of bright and dark stripes corresponding to ZnCdO:Eu QWs an...

work page
[4]

MagTop” project (FENG.02.01 -IP.05-0028/23) carried out within the “International Research Agendas

𝟐𝟒𝟗 Å and 𝒄𝟎 = 𝟓. 𝟐𝟎𝟓 Å, JCPDS 00-005-0664). For both samples we obtain smaller value of the c-lattice parameters and higher value of the a-lattice parameters. The higher difference in the lattice parameter was observed for sample B. Kumar et al.[5] reported an increase in the lattice parameter in ZnO:Eu 3+ nanophosphors, correlating with higher Eu doping...

work page
[5]

O. Kalu, I. Ahemen, H. E. Ponce, J. Alberto, D. Moller, J. Phys. D. Appl. Phys. 2021, 54, 345108

work page 2021
[6]

us Saqib, R

N. us Saqib, R. Adnan, I. Shah, Environ. Sci. Pollut. Res. 2016, 23, 15941

work page 2016
[7]

Kumawat, K

A. Kumawat, K. P. Misra, S. Chattopadhyay, Mater. Technol. 2022, 37, 1595

work page 2022
[8]

S. W. Choi, S. Emura, S. Kimura, M. S. Kim, Y. K. Zhou, N. Teraguchi, A. Suzuki, A. Yanase, H. Asahi, J. Alloys Compd. 2006, 408–412, 717

work page 2006

Show all 53 references

[9]

Kumar, V

V. Kumar, V. Kumar, S. Som, M. M. Duvenhage, O. M. Ntwaeaborwa, H. C. Swart, Appl. Surf. Sci. 2014, 308, 419

2014
[10]

J. A. Mathew, V. Tsiumra, J. M. Sajkowski, A. Wierzbicka, R. Jakiela, Y. Zhydachevskyy, E. Przezdziecka, M. Stachowicz, A. Kozanecki, J. Lumin. 2022, 251, 119167

2022
[11]

Singh, P

S. Singh, P. Thiyagarajan, K. Mohan Kant, D. Anita, S. Thirupathiah, N. Rama, B. Tiwari, M. Kottaisamy, M. S. Ramachandra Rao, J. Phys. D. Appl. Phys. 2007, 40, 6312

2007
[12]

El-Shaer, A

A. El-Shaer, A. Bakin, M. Al-Suleiman, S. Ivanov, A. Che Mofor, A. Waag, Superlattices Microstruct. 2007, 42, 129

2007
[13]

O. Kalu, J. A. Duarte Moller, A. Reyes Rojas, Phys. Lett. Sect. A Gen. At. Solid State Phys. 2019, 383, 1037

2019
[14]

L. F. Koao, B. F. Dejene, H. C. Swart, S. V. Motloung, T. E. Motaung, Opt. Mater. (Amst). 2016, 60, 294

2016
[15]

Ghrib, A

T. Ghrib, A. L. Al-Otaibi, I. Massoudi, A. M. Alsagry, A. S. Aljaber, E. A. Alhussain, W. S. Alrubian, S. Brini, M. A. Gondal, K. A. Elsayed, T. S. Kayed, Arab J. Basic Appl. Sci. 2022, 29, 138

2022
[16]

Suzuki, K

K. Suzuki, K. Murayama, N. Tanaka, Appl. Phys. Lett. 2015, 107, 031902

2015
[17]

C. J. Pan, C. W. Chen, J. Y. Chen, P. J. Huang, G. C. Chi, C. Y. Chang, F. Ren, S. J. Pearton, Appl. Surf. Sci. 2009, 256, 187

2009
[18]

Hasabeldaim, O

E. Hasabeldaim, O. M. Ntwaeaborwa, R. E. Kroon, H. C. Swart, J. Mol. Struct. 2019, 1192, 105

2019
[19]

L. Yang, Z. Jiang, J. Dong, A. Pan, X. Zhuang, Mater. Lett. 2014, 129, 65

2014
[20]

Kozanecki, J

A. Kozanecki, J. M. Sajkowski, J. A. Mathew, Y. Zhydachevskyy, E. Alves, M. Stachowicz, Appl. Phys. Lett. 2021, 119, 112101

2021
[21]

J. L. Frieiro, C. Guillaume, J. López-Vidrier, O. Blázquez, S. González-Torres, C. Labbé, S. Hernández, X. Portier, B. Garrido, Nanotechnology 2020, 31, 465207

2020
[22]

H. J. Lozykowski, W. M. Jadwisienczak, J. Han, I. G. Brown, Appl. Phys. Lett. 2000, 77, 767

2000
[23]

Magalhães, M

S. Magalhães, M. Peres, V. Fellmann, B. Daudin, A. J. Neves, E. Alves, T. Monteiro, K. Lorenz, J. Appl. Phys. 2010, 108, 084306

2010
[24]

Ben Sedrine, J

N. Ben Sedrine, J. Rodrigues, D. N. Faye, A. J. Neves, E. Alves, M. Bockowski, V. Hoffmann, M. Weyers, K. Lorenz, M. R. Correia, T. Monteiro, ACS Appl. Nano Mater. 2018, 1, 3845

2018
[25]

Brahlek, A

M. Brahlek, A. Sen Gupta, J. Lapano, J. Roth, H. T. Zhang, L. Zhang, R. Haislmaier, R. Engel-Herbert, Adv. Funct. Mater. 2018, 28, 1702772

2018
[26]

He, Chinese Phys

K. He, Chinese Phys. B 2022, 31, 126804

2022
[27]

M. H. Asghar, F. Placido, S. Naseem, Eur. Phys. JournalApplied Phys. 2006, 184, 177

2006
[28]

M. A. Ebdah, M. E. Kordesch, A. Anders, W. M. Jadwisienczak, Mater. Res. Soc. Symp. Proc. 2010, 1202, 269

2010
[29]

Magalhães, J

S. Magalhães, J. S. Cabaço, J. P. Araújo, E. Alves, CrystEngComm 2021, 23, 3308

2021
[30]

Magalhães, C

S. Magalhães, C. Cachim, P. D. Correia, F. Oliveira, F. Cerqueira, J. M. Sajkowski, M. Stachowicz, CrystEngComm 2023, 25, 4133

2023
[31]

Takeda, J

M. Takeda, J. Suzuki, JOSA A 1996, 13, 1495

1996
[32]

Przeździecka, A

E. Przeździecka, A. Wierzbicka, A. Lysak, P. Dłużewski, A. Adhikari, P. Sybilski, K. Morawiec, A. Kozanecki, Cryst. Growth Des. 2022, 22, 1110

2022
[33]

Lysak, E

A. Lysak, E. Przeździecka, A. Wierzbicka, P. Dłużewski, J. Sajkowski, K. Morawiec, A. Kozanecki, Cryst. Growth Des. 2023, 23, 134

2023
[34]

J.-H. Kim, S. K. Han, S. I. Hong, S.-K. Hong, J. W. Lee, J. Y. Lee, J.-H. Song, J. S. Park, T. Yao, J. Vac. Sci. Technol. B Microelectron. Nanom. Struct. 2009, 27, 1625

2009
[35]

Tanoue, M

H. Tanoue, M. Takenouchi, T. Yamashita, S. Wada, Z. Yatabe, S. Nagaoka, Y. Naka, Y. Nakamura, Phys. Status Solidi Appl. Mater. Sci. 2017, 214, 1600603

2017
[36]

C. C. Kuo, B. H. Lin, S. Yang, W. R. Liu, W. F. Hsieh, C. H. Hsu, Appl. Phys. Lett. 2012, 101, 011901

2012
[37]

H. V. Stanchu, A. V. Kuchuk, P. M. Lytvyn, Y. I. Mazur, Y. Maidaniuk, M. Benamara, S. Li, S. Kryvyi, V. P. Kladko, A. E. Belyaev, Z. M. Wang, G. J. Salamo, Mater. Des. 2018, 157, 141

2018
[38]

P. F. Fewster, J. Mater. Sci. Mater. Electron. 1999, 10, 175

1999
[39]

A. V. Tauc, J., Radu Grigorovici, Phys. status solidi 1966, 15, 627

1966
[40]

Bedia, F

A. Bedia, F. Z. Bedia, M. Aillerie, N. Maloufi, B. Benyoucef, Energy Procedia 2015, 74, 529

2015
[41]

Straßburg, M

M. Straßburg, M. Kuttler, O. Stier, U. W. Pohl, D. Bimberg, M. Behringer, D. Hommel, J. Cryst. Growth 1998, 184– 185, 465

1998
[42]

Kasap, S., Capper, Springer Handbook of Electronic and Photonic Materials, Springer, 2017

P. Kasap, S., Capper, Springer Handbook of Electronic and Photonic Materials, Springer, 2017

2017
[43]

Boubaker, 2011, 126, 1

Regular, K. Boubaker, 2011, 126, 1

2011
[44]

Bindu, S

P. Bindu, S. Thomasa, Acta Phys. Pol. A 2017, 131, 1474

2017
[45]

Khosravizadeh, P

Z. Khosravizadeh, P. Dziawa, S. Dad, R. Jakiela, Thin Solid Films 2023, 781, 139974

2023
[46]

Lysak, E

A. Lysak, E. Przeździecka, R. Jakiela, A. Reszka, B. Witkowski, Z. Khosravizadeh, A. Adhikari, J. M. Sajkowski, A. Kozanecki, Mater. Sci. Semicond. Process. 2022, 142, 1

2022
[47]

Kuttler, M

M. Kuttler, M. Strassburg, V. Türck, R. Heitz, U. W. Pohl, D. Bimberg, E. Kurtz, G. Landwehr, D. Hommel, Appl. Phys. Lett. 1996, 69, 2647

1996
[48]

R. Raji, K. G. Gopchandran, J. Sci. Adv. Mater. Devices 2017, 2, 51

2017
[49]

Layek, S

A. Layek, S. Banerjee, B. Manna, A. Chowdhury, RSC Adv. 2016, 6, 35892

2016
[50]

M. A. Boukadhaba, A. Fouzri, V. Sallet, S. S. Hassani, G. Amiri, A. Lusson, M. Oumezzine, Superlattices Microstruct. 2015, 85, 820

2015
[51]

Ton-That, L

C. Ton-That, L. Weston, M. R. Phillips, Phys. Rev. B - Condens. Matter Mater. Phys. 2012, 86, 1

2012
[52]

D. K. Lee, S. Kim, M. C. Kim, S. H. Eom, H. T. Oh, S. H. Choi, J. Korean Phys. Soc. 2007, 51, 1378

2007
[53]

S. M. Ahmed, P. Szymanski, L. M. El-Nadi, M. A. El-Sayed, ACS Appl. Mater. Interfaces 2014, 6, 1765

2014

Pith tools

Reviewed August 8, 2026 · model on record in the stance chip above.

[1] [1]

Introduction Wide-band gap (WBG) semiconductors doped with rare earth (RE) elements such as Ce, Er, Eu, Tb, etc., have become the subject of considerable attentio n due to their unique properties and potential for use in a wide range of applications [1–4]. Among RE elements, Europium (Eu) exhibits distinctive luminescence characteristics, in particular re...

work page

[2] [2]

0) substrates by plasma assisted molecular beam epitaxy (PA -MBE) in a Riber Compact 21 system

Experimental In-situ Eu-doped ZnCdO/ZnMgO superlattices (SLs) with varying sublayer thicknesses were grown on commercially available m-plane sapphire (10. 0) substrates by plasma assisted molecular beam epitaxy (PA -MBE) in a Riber Compact 21 system. Before growt h, the m-plane sapphire (Al 2O3) substrates were chemically cleaned in a H 2SO4:H2O2 (1:1) mi...

work page

[3] [3]

The images demonstrate a well-defined periodic layered structures consisting of arrays of bright and dark stripes corresponding to ZnCdO:Eu QWs and ZnMgO barriers, respectively

Results 3.1 TEM analysis Cross-sectional high-angle annular dark-field scanning transmission electron microscopy (HAADF/STEM) images of as -grown Eu-doped {ZnCdO/ZnMgO}22 SLs samples A and B are shown in Fig 1. The images demonstrate a well-defined periodic layered structures consisting of arrays of bright and dark stripes corresponding to ZnCdO:Eu QWs an...

work page

[4] [4]

MagTop” project (FENG.02.01 -IP.05-0028/23) carried out within the “International Research Agendas

𝟐𝟒𝟗 Å and 𝒄𝟎 = 𝟓. 𝟐𝟎𝟓 Å, JCPDS 00-005-0664). For both samples we obtain smaller value of the c-lattice parameters and higher value of the a-lattice parameters. The higher difference in the lattice parameter was observed for sample B. Kumar et al.[5] reported an increase in the lattice parameter in ZnO:Eu 3+ nanophosphors, correlating with higher Eu doping...

work page

[5] [5]

O. Kalu, I. Ahemen, H. E. Ponce, J. Alberto, D. Moller, J. Phys. D. Appl. Phys. 2021, 54, 345108

work page 2021

[6] [6]

us Saqib, R

N. us Saqib, R. Adnan, I. Shah, Environ. Sci. Pollut. Res. 2016, 23, 15941

work page 2016

[7] [7]

Kumawat, K

A. Kumawat, K. P. Misra, S. Chattopadhyay, Mater. Technol. 2022, 37, 1595

work page 2022

[8] [8]

S. W. Choi, S. Emura, S. Kimura, M. S. Kim, Y. K. Zhou, N. Teraguchi, A. Suzuki, A. Yanase, H. Asahi, J. Alloys Compd. 2006, 408–412, 717

work page 2006