Cooling-induced strain in a triangular silicon FinFET changes hole spin qubit band mixing, g-factors, and Rabi frequencies, with a compressive strain scenario matching the experimental device best.
For instance ⟨ψ1|M1,y|ψ2⟩=− 1 2δB [⟨ψ1|H(V,+δBy)|ψ 2⟩ − ⟨ψ1|H(V,−δBy)|ψ 2⟩] (A19) , where the 6×6 diagonal blocks ofHare given by Eq
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Simulation of single hole spin qubit in strained triangular FinFET quantum devices
Cooling-induced strain in a triangular silicon FinFET changes hole spin qubit band mixing, g-factors, and Rabi frequencies, with a compressive strain scenario matching the experimental device best.