In epitaxially grown WS2-graphene heterostructures, a 0° twist enables efficient ultrafast charge separation upon 3.1 eV photoexcitation while a 30° twist produces comparable electron and hole transfer rates.
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Influence of twist angle on ultrafast charge separation in WS2-graphene heterostructures
In epitaxially grown WS2-graphene heterostructures, a 0° twist enables efficient ultrafast charge separation upon 3.1 eV photoexcitation while a 30° twist produces comparable electron and hole transfer rates.