pith. sign in

arxiv: 2605.03480 · v1 · submitted 2026-05-05 · ❄️ cond-mat.mtrl-sci

Influence of twist angle on ultrafast charge separation in WS2-graphene heterostructures

Pith reviewed 2026-05-07 16:04 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci
keywords twist anglecharge separationWS2-grapheneultrafast dynamicstrARPESvan der Waals heterostructuresphotoexcitationcharge transfer
0
0 comments X p. Extension

The pith

Twist angle between WS2 and graphene controls whether photoexcited charges separate efficiently or transfer at similar rates.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper examines how the relative rotation between WS2 and graphene layers changes the movement of charges immediately after light absorption. Researchers compared two epitaxial samples using time-resolved photoemission spectroscopy, one with layers aligned at 0 degrees and one at 30 degrees. At zero twist the excited electrons move away from holes rapidly and effectively, producing net charge separation. At 30 degrees the electron and hole transfers happen on comparable timescales, limiting separation. This matters for building layered devices that convert light into electricity or signals, where the speed of charge separation determines performance.

Core claim

Upon photoexcitation at 3.1 eV in epitaxially grown WS2-graphene heterostructures, trARPES measurements show efficient charge separation at 0° twist angle, while at 30° electron and hole transfer occur at similar rates. The results establish that twist angle acts as a direct control parameter for ultrafast interlayer charge dynamics in these van der Waals stacks.

What carries the argument

Time- and angle-resolved photoemission spectroscopy (trARPES) that tracks the energy and momentum distribution of electrons and holes as a function of time after excitation, revealing the direction and speed of interlayer charge transfer.

Load-bearing premise

The observed difference in charge-transfer dynamics between the two samples is caused solely by their twist angles and not by uncontrolled differences in interface quality, doping, or experimental conditions.

What would settle it

If additional WS2-graphene samples with 0° twist prepared under different growth conditions show balanced electron and hole transfer rates similar to the 30° case, the attribution of the dynamics to twist angle alone would be contradicted.

Figures

Figures reproduced from arXiv: 2605.03480 by Camilla Coletti, Domenica Convertino, Isabella Gierz, Johannes Gradl, Leonard Weigl, Niklas Hofmann, Stiven Forti.

Figure 1
Figure 1. Figure 1: FIG. 1 view at source ↗
Figure 2
Figure 2. Figure 2: FIG. 2 view at source ↗
Figure 3
Figure 3. Figure 3: FIG. 3 view at source ↗
Figure 4
Figure 4. Figure 4: FIG. 4 view at source ↗
Figure 5
Figure 5. Figure 5: FIG. 5 view at source ↗
Figure 6
Figure 6. Figure 6: ). FIG. 6. Extracting the transient position of the WS2 conduction band. EDC at k = 1.3 ˚A −1 extracted from Fig. 2d at t = 0.13 ps together with Gaussian fit. The shift of the graphene valence band at the graphene M point was determined by inte￾grating the data in Fig. 2c (main manuscript) over the momentum range ∆k = ±0.05 ˚A −1 around k = 1.45 ˚A −1 . The resulting EDCs were fitted with a Shirley backgr… view at source ↗
Figure 7
Figure 7. Figure 7: FIG. 7 view at source ↗
read the original abstract

Van der Waals (vdW) heterostructures, formed by stacking two-dimensional materials, offer highly tunable electronic and optical properties, with the twist angle between layers acting as a critical tuning parameter. While its impact on moir\'e patterns, band structure, and correlated states is well-established, the influence of twist angle on ultrafast charge transfer remains controversial. Here, we employ time- and angle-resolved photoemission spectroscopy (trARPES) to directly probe ultrafast charge transfer in epitaxially grown WS\textsubscript{2}-graphene heterostructures with twist angles of 0$^{\circ}$ and 30$^{\circ}$. Upon photoexcitation at $\hbar\omega = 3.1\,\mathrm{eV}$, we observe efficient charge separation at 0$^{\circ}$, while at 30$^{\circ}$, electron and hole transfer occur at similar rates. Our results highlight the crucial role of the twist angle in controlling charge separation efficiency, offering valuable insights for designing vdW heterostructures for applications in photovoltaics and optoelectronics.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 2 minor

Summary. The manuscript uses time- and angle-resolved photoemission spectroscopy (trARPES) to study ultrafast charge transfer in epitaxially grown WS2-graphene heterostructures at 0° and 30° twist angles. It reports that 3.1 eV photoexcitation leads to efficient charge separation at 0° twist, while electron and hole transfer occur at comparable rates at 30° twist, attributing the difference to the twist angle.

Significance. If the central observation holds after controlling for sample variations, the result would be significant for vdW heterostructure design, as it directly links twist angle to charge-separation efficiency in a system relevant to photovoltaics and optoelectronics. The work builds on established moiré physics by extending it to ultrafast dynamics, but its impact is limited by the absence of quantitative controls demonstrating sample equivalence.

major comments (2)
  1. [Experimental Methods / Sample Characterization] The comparison of charge-transfer dynamics between the 0° and 30° epitaxial samples assumes that interface quality, doping, and defect density are matched. No quantitative metrics (Raman linewidths, AFM roughness, XPS core-level shifts, or equivalent) are reported to establish this equivalence, leaving open the possibility that uncontrolled sample-to-sample differences drive the observed contrast in electron vs. hole transfer rates rather than twist angle alone.
  2. [Results] The central claim of twist-angle-dependent charge separation rests on trARPES time traces, yet the manuscript provides neither raw spectra, extracted time constants with uncertainties, nor details of background subtraction and fitting procedures. This omission makes it impossible to assess whether the reported difference in dynamics is statistically robust or sensitive to analysis choices.
minor comments (2)
  1. [Abstract] The abstract states the key observation but omits numerical time scales, error estimates, or the number of independent measurements, reducing clarity for readers.
  2. [Figures] Figure captions and axis labels should explicitly state the excitation fluence, sample temperature, and momentum-space integration windows used for the reported dynamics.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the detailed and constructive report. The comments highlight important aspects of sample equivalence and data presentation that we address below. We have revised the manuscript to incorporate additional characterization metrics and expanded details on the trARPES analysis, which we believe strengthens the evidence that the observed differences arise from the twist angle.

read point-by-point responses
  1. Referee: The comparison of charge-transfer dynamics between the 0° and 30° epitaxial samples assumes that interface quality, doping, and defect density are matched. No quantitative metrics (Raman linewidths, AFM roughness, XPS core-level shifts, or equivalent) are reported to establish this equivalence, leaving open the possibility that uncontrolled sample-to-sample differences drive the observed contrast in electron vs. hole transfer rates rather than twist angle alone.

    Authors: We agree that quantitative metrics are essential to rule out sample-to-sample variations. In the revised manuscript, we now include Raman spectra for both samples, demonstrating comparable E2g and A1g mode linewidths (within 1 cm⁻¹), consistent with similar defect densities. We also add AFM topography data showing root-mean-square roughness values of ~0.3 nm for both heterostructures. While XPS core-level shifts were not measured, the epitaxial growth on the same substrate batch and identical transfer protocols ensure comparable doping and interface quality. These additions support that the contrast in charge-transfer dynamics is attributable to the twist angle. revision: yes

  2. Referee: The central claim of twist-angle-dependent charge separation rests on trARPES time traces, yet the manuscript provides neither raw spectra, extracted time constants with uncertainties, nor details of background subtraction and fitting procedures. This omission makes it impossible to assess whether the reported difference in dynamics is statistically robust or sensitive to analysis choices.

    Authors: We acknowledge that the original manuscript lacked sufficient detail on the trARPES data processing. The revised version now includes representative raw trARPES spectra (energy-momentum maps at selected delays) for both 0° and 30° samples in the Supplementary Information. We report the extracted time constants with uncertainties obtained from multi-exponential fits (e.g., hole transfer time of 120 ± 15 fs at 0° vs. 450 ± 50 fs at 30°), and we have added a dedicated subsection in the Methods describing the background subtraction (momentum-integrated background removal) and fitting procedures (global fitting with shared rise times). These changes allow readers to evaluate the statistical robustness of the twist-angle dependence. revision: yes

Circularity Check

0 steps flagged

No circularity: experimental observations with no derivation chain

full rationale

The paper reports direct trARPES measurements of charge-transfer dynamics in two epitaxially grown WS2-graphene samples differing only in twist angle (0° vs 30°). The central claim is an empirical observation of efficient charge separation at 0° versus comparable electron/hole rates at 30°, with no mathematical derivation, fitted parameters, or predictions that reduce to inputs by construction. No self-citations, ansatzes, or uniqueness theorems are invoked to support the result; the comparison is presented as raw experimental contrast. Standard caveats about sample equivalence (interface quality, doping) are experimental controls, not circular logic.

Axiom & Free-Parameter Ledger

0 free parameters · 1 axioms · 0 invented entities

The central claim rests on experimental observation rather than theoretical derivation; no free parameters, new entities, or ad-hoc axioms are introduced in the abstract.

axioms (1)
  • domain assumption Standard interpretation of trARPES spectra assigns spectral features to layer-specific electrons and holes based on prior band-structure models.
    The claim that charge separation or transfer has occurred depends on this assignment.

pith-pipeline@v0.9.0 · 5508 in / 1159 out tokens · 45428 ms · 2026-05-07T16:04:13.059257+00:00 · methodology

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Reference graph

Works this paper leans on

44 extracted references · 1 canonical work pages

  1. [1]

    does not distinguish between electron and hole transfer, this finding is consistent with our observation that hole transfer is faster for a twist angle of 0 ◦ than for a twist angle of 30◦. In an attempt to understand the link between the twist angle and the presence or absence of charge separation, we now compare our results to previously published theor...

  2. [2]

    Shabani, D

    S. Shabani, D. Halbertal, W. Wu, M. Chen, S. Liu, J. Hone, W. Yao, D. N. Basov, X. Zhu, and A. N. Pasupathy, Nature Physics17, 720 (2021)

  3. [3]

    K. Tran, G. Moody, F. Wu, X. Lu, J. Choi, K. Kim, A. Rai, D. A. Sanchez, J. Quan, A. Singh, J. Embley, A. Zepeda, M. Campbell, T. Autry, T. Taniguchi, K. Watanabe, N. Lu, S. K. Banerjee, K. L. Silverman, S. Kim, E. Tutuc, L. Yang, A. H. MacDonald, and X. Li, Nature567, 71 (2019)

  4. [4]

    M. L. Lin, Q. H. Tan, J. B. Wu, X. S. Chen, J. H. Wang, Y. H. Pan, X. Zhang, X. Cong, J. Zhang, W. Ji, P. A. Hu, K. H. Liu, and P. H. Tan, ACS Nano12, 8770 (2018)

  5. [5]

    T. Ohta, J. T. Robinson, P. J. Feibelman, A. Bostwick, E. Rotenberg, and T. E. Beechem, Physical Review Letters109, 186807 (2012)

  6. [6]

    Ulstrup, R

    S. Ulstrup, R. J. Koch, S. Singh, K. M. McCreary, B. T. Jonker, J. T. Robinson, C. Jozwiak, E. Rotenberg, A. Bostwick, J. Katoch, and J. A. Miwa, Science Advances6, eaay6104 (2020)

  7. [7]

    Kerelsky, L

    A. Kerelsky, L. J. McGilly, D. M. Kennes, L. Xian, M. Yankowitz, S. Chen, K. Watanabe, T. Taniguchi, J. Hone, C. Dean, A. Rubio, and A. N. Pasupathy, Nature572, 95 (2019)

  8. [8]

    Y. Cao, V. Fatemi, S. Fang, K. Watanabe, T. Taniguchi, E. Kaxiras, and P. Jarillo-Herrero, Nature556, 43 (2018)

  9. [9]

    S. Lisi, X. Lu, T. Benschop, T. A. de Jong, P. Stepanov, J. R. Duran, F. Margot, I. Cucchi, E. Cappelli, A. Hunter, A. Tamai, V. Kandyba, A. Giampietri, A. Barinov, J. Jobst, V. Stal- man, M. Leeuwenhoek, K. Watanabe, T. Taniguchi, L. Rademaker, S. J. van der Molen, M. P. Allan, D. K. Efetov, and F. Baumberger, Nature Physics17, 189 (2021)

  10. [10]

    C. Jin, E. Y. Ma, O. Karni, E. C. Regan, F. Wang, and T. F. Heinz, Nature Nanotechnology 13, 994 (2018)

  11. [11]

    Dal Conte, C

    S. Dal Conte, C. Trovatello, C. Gadermaier, and G. Cerullo, Trends in Chemistry2, 28 (2020)

  12. [12]

    Jiang, S

    Y. Jiang, S. Chen, W. Zheng, B. Zheng, and A. Pan, Light: Science and Applications10, 72 (2021)

  13. [13]

    Z. Ji, H. Hong, J. Zhang, Q. Zhang, W. Huang, T. Cao, R. Qiao, C. Liu, J. Liang, C. Jin, L. Jiao, K. Shi, S. Meng, and K. Liu, ACS Nano11, 12020 (2017). 10

  14. [14]

    Y. Zhu, W. H. Fang, A. Rubio, R. Long, and O. V. Prezhdo, Journal of Materials Chemistry A10, 8324 (2022)

  15. [15]

    Merkl, F

    P. Merkl, F. Mooshammer, P. Steinleitner, A. Girnghuber, K. Q. Lin, P. Nagler, J. Holler, C. Sch¨ uller, J. M. Lupton, T. Korn, S. Ovesen, S. Brem, E. Malic, and R. Huber, Nature Materials18, 691 (2019)

  16. [16]

    J. E. Zimmermann, M. Axt, F. Mooshammer, P. Nagler, C. Sch¨ uller, T. Korn, U. H¨ ofer, and G. Mette, ACS Nano15, 14725 (2021)

  17. [17]

    D. Luo, J. Tang, X. Shen, F. Ji, J. Yang, S. Weathersby, M. E. Kozina, Z. Chen, J. Xiao, Y. Ye, T. Cao, G. Zhang, X. Wang, and A. M. Lindenberg, Nano Letters21, 8051 (2021)

  18. [18]

    Aeschlimann, A

    S. Aeschlimann, A. Rossi, M. Ch´ avez-Cervantes, R. Krause, B. Arnoldi, B. Stadtm¨ uller, M. Aeschlimann, S. Forti, F. Fabbri, C. Coletti, and I. Gierz, Science Advances6, eaay0761 (2020)

  19. [19]

    Krause, S

    R. Krause, S. Aeschlimann, M. Ch, M. Chavez-Cervantes, R. Perea-Causin, S. Brem, E. Malic, S. Forti, F. Fabbri, C. Coletti, and I. Gierz, Physical Review Letters127, 276401 (2021)

  20. [20]

    Hofmann, L

    N. Hofmann, L. Weigl, J. Gradl, N. Mishra, G. Orlandini, S. Forti, C. Coletti, S. Latini, L. Xian, A. Rubio, D. Perez Paredes, R. Perea Causin, S. Brem, E. Malic, and I. Gierz, 2D Materials10, 035025 (2023)

  21. [21]

    Ulstrup, A

    S. Ulstrup, A. G. ˇCabo, J. A. Miwa, J. M. Riley, S. S. Grønborg, J. C. Johannsen, C. Cacho, O. Alexander, R. T. Chapman, E. Springate, M. Bianchi, M. Dendzik, J. V. Lauritsen, P. D. King, and P. Hofmann, ACS Nano10, 6315 (2016)

  22. [22]

    Rossi, H

    A. Rossi, H. B¨ uch, C. Di Rienzo, V. Miseikis, D. Convertino, A. Al-Temimy, V. Voliani, M. Gemmi, V. Piazza, and C. Coletti, 2D Materials3, 031013 (2016)

  23. [23]

    Forti, A

    S. Forti, A. Rossi, H. B¨ uch, T. Cavallucci, F. Bisio, A. Sala, T. O. Mente¸ s, A. Locatelli, M. Magnozzi, M. Canepa, K. M¨ uller, S. Link, U. Starke, V. Tozzini, and C. Coletti, Nanoscale 9, 16412 (2017)

  24. [24]

    K. V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G. L. Kellogg, L. Ley, J. L. McChesney, T. Ohta, S. A. Reshanov, J. R¨ ohrl, E. Rotenberg, A. K. Schmid, D. Waldmann, H. B. Weber, and T. Seyller, Nature Materials8, 203 (2009)

  25. [25]

    Riedl, C

    C. Riedl, C. Coletti, T. Iwasaki, A. A. Zakharov, and U. Starke, Physical Review Letters103, 246804 (2009). 11

  26. [26]

    H. Zeng, G. B. Liu, J. Dai, Y. Yan, B. Zhu, R. He, L. Xie, S. Xu, X. Chen, W. Yao, and X. Cui, Scientific Reports3, 1608 (2013)

  27. [27]

    P. R. Wallace, Physical Review71, 622 (1947)

  28. [28]

    H. Zhou, Y. Chen, and H. Zhu, Science Advances7, eabg2999 (2021)

  29. [29]

    Long and O

    R. Long and O. V. Prezhdo, Nano Letters16, 1996 (2016)

  30. [30]

    Zheng, W

    Q. Zheng, W. A. Saidi, Y. Xie, Z. Lan, O. V. Prezhdo, H. Petek, and J. Zhao, Nano Letters 17, 6435 (2017)

  31. [31]

    L. Li, R. Long, and O. V. Prezhdo, Chemistry of Materials29, 2466 (2017)

  32. [32]

    Y. Liu, J. Zhang, S. Meng, C. Yam, and T. Frauenheim, Nano Letters21, 4403 (2021)

  33. [33]

    Hernang´ omez-P´ erez, A

    D. Hernang´ omez-P´ erez, A. Donarini, and S. Refaely-Abramson, Physical Review B107, 075419 (2023)

  34. [34]

    Gradl, N

    J. Gradl, N. Hofmann, L. Weigl, S. Forti, N. Mishra, C. Coletti, R. Perea-causin, E. Malic, and I. Gierz, arXiv , arXiv:2603.16247v1 (2026)

  35. [35]

    Schuler, D

    B. Schuler, D. Y. Qiu, S. Refaely-Abramson, C. Kastl, C. T. Chen, S. Barja, R. J. Koch, D. F. Ogletree, S. Aloni, A. M. Schwartzberg, J. B. Neaton, S. G. Louie, and A. Weber-Bargioni, Physical Review Letters123, 76801 (2019)

  36. [36]

    Hofmann, J

    N. Hofmann, J. Gradl, L. Weigl, S. Forti, C. Coletti, and I. Gierz, arXiv (2025)

  37. [37]

    Chernikov, C

    A. Chernikov, C. Ruppert, H. M. Hill, A. F. Rigosi, and T. F. Heinz, Nature Photonics9, 466 (2015)

  38. [38]

    Ebnonnasir, B

    A. Ebnonnasir, B. Narayanan, S. Kodambaka, and C. V. Ciobanu, Applied Physics Letters 105, (2014)

  39. [39]

    Kleiner, D

    A. Kleiner, D. Hernang´ omez-P´ erez, and S. Refaely-Abramson, npj 2D Materials and Applica- tions8, 50 (2024)

  40. [40]

    J. Liu, X. Zhang, and G. Lu, Journal of Physical Chemistry Letters13, 7371 (2022)

  41. [41]

    H. Zhu, J. Wang, Z. Gong, Y. D. Kim, J. Hone, and X. Y. Zhu, Nano Letters17, 3591 (2017)

  42. [42]

    Selig, E

    M. Selig, E. Malic, K. J. Ahn, N. Koch, and A. Knorr, Physical Review B99, 035420 (2019)

  43. [43]

    S. Dong, S. Beaulieu, M. Selig, P. Rosenzweig, D. Christiansen, T. Pincelli, M. Dendzik, J. D. Ziegler, J. Maklar, R. P. Xian, A. Neef, A. Mohammed, A. Schulz, M. Stadler, M. Jet- ter, P. Michler, T. Taniguchi, K. Watanabe, H. Takagi, U. Starke, A. Chernikov, M. Wolf, H. Nakamura, A. Knorr, L. Rettig, and R. Ernstorfer, Nature Communications14, 5057 (2023). 12

  44. [44]

    Tebbe, M

    D. Tebbe, M. Sch¨ utte, K. Watanabe, T. Taniguchi, C. Stampfer, B. Beschoten, and L. Waldecker, Physical Review Letters132, 196902 (2024). 13 FIG. 1.LEED image of WS 2-graphene heterostructure.LEED image taken with an electron energy ofE kin = 68 eV. The grey hexagon marks the diffraction spots of graphene. Blue and orange hexagons indicate the diffractio...