Oxygen plasma treatment on Ge heterostructures reduces interface trap density from the Si cap, improving mobility and lowering percolation density in 2DHGs compared with HF etching.
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Impact of surface treatments on the transport properties of germanium 2DHGs
Oxygen plasma treatment on Ge heterostructures reduces interface trap density from the Si cap, improving mobility and lowering percolation density in 2DHGs compared with HF etching.