NiTe2 shows a magnetic-field-independent third-harmonic transverse voltage consistent with the predicted third-order nonlinear Hall effect, while the second-harmonic response stays near zero.
Role of Disorder in Third-order Anomalous Hall Effect in Time-reversal Symmetric Systems
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abstract
The third-order anomalous Hall effect (TOAHE) driven by Berry connection polarizability in Dirac materials offers a promising avenue for exploring quantum geometric phenomena. We investigate the role of impurity scattering on TOAHE using the semiclassical Boltzmann framework, via a comparison of the intrinsic contributions (stemming from the Berry connection polarizability) with the extrinsic contributions caused by the disorder. To validate our theoretical findings, we employ a generalized two-dimensional low-energy Dirac model to analytically assess the intrinsic and extrinsic contributions to the TOAHE. Our analysis reveals distinct disorder-mediated effects, including skew-scattering and side-jump contributions. We also elucidate their intriguing dependencies on Fermi surface anisotropy and discuss opportunities for experimental exploration.
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Demonstration of the third-order nonlinear Hall effect in topological Dirac semimetal NiTe$_2$
NiTe2 shows a magnetic-field-independent third-harmonic transverse voltage consistent with the predicted third-order nonlinear Hall effect, while the second-harmonic response stays near zero.