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Role of Disorder in Third-order Anomalous Hall Effect in Time-reversal Symmetric Systems

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arxiv 2409.07993 v2 pith:453MBKXM submitted 2024-09-12 cond-mat.mes-hall cond-mat.mtrl-sci

Chanchal K. Barman , Arghya Chattopadhyay , Surajit Sarkar , Jian-Xin Zhu , Snehasish Nandy This is my paper · ORCID
classification cond-mat.mes-hallcond-mat.mtrl-sci
keywords contributionstoaheanomalousberryconnectiondiracdisordereffect
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The third-order anomalous Hall effect (TOAHE) driven by Berry connection polarizability in Dirac materials offers a promising avenue for exploring quantum geometric phenomena. We investigate the role of impurity scattering on TOAHE using the semiclassical Boltzmann framework, via a comparison of the intrinsic contributions (stemming from the Berry connection polarizability) with the extrinsic contributions caused by the disorder. To validate our theoretical findings, we employ a generalized two-dimensional low-energy Dirac model to analytically assess the intrinsic and extrinsic contributions to the TOAHE. Our analysis reveals distinct disorder-mediated effects, including skew-scattering and side-jump contributions. We also elucidate their intriguing dependencies on Fermi surface anisotropy and discuss opportunities for experimental exploration.

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Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Demonstration of the third-order nonlinear Hall effect in topological Dirac semimetal NiTe$_2$

    cond-mat.mes-hall 2025-02 conditional novelty 4.0 of 10

    NiTe2 shows a magnetic-field-independent third-harmonic transverse voltage consistent with the predicted third-order nonlinear Hall effect, while the second-harmonic response stays near zero.

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