Periodically ordered sulfur vacancies at 11.1% in monolayer MoS2 form an in-gap miniband and can carry currents up to five orders of magnitude higher than random vacancy distributions in simulations.
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Atomic Scale Ordering of Sulfur Vacancies Enhances Charge Transport in Monolayer MoS$_2$
Periodically ordered sulfur vacancies at 11.1% in monolayer MoS2 form an in-gap miniband and can carry currents up to five orders of magnitude higher than random vacancy distributions in simulations.