A 3D-integrated silicon MOS double quantum dot device with high-impedance NbN resonator achieves cavity Q above 10,000, dispersive charge readout SNR of 100 in 300 ns, and spin-photon coupling gs/2π = 75 MHz.
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3D integration of a hybrid quantum dot circuit-QED device for fast gate dispersive charge readout and coherent spin-photon coupling
A 3D-integrated silicon MOS double quantum dot device with high-impedance NbN resonator achieves cavity Q above 10,000, dispersive charge readout SNR of 100 in 300 ns, and spin-photon coupling gs/2π = 75 MHz.