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arxiv: 2604.25871 · v1 · submitted 2026-04-28 · ❄️ cond-mat.mes-hall

Recognition: unknown

3D integration of a hybrid quantum dot circuit-QED device for fast gate dispersive charge readout and coherent spin-photon coupling

Sebastien Granel , Frederic Gustavo , Jean-Luc Thomassin , Heimanu Niebojewski , Benoit Bertrand , Frederic Berger , Alain Gueugnot , Chafik Mhamdi
show 3 more authors
Etienne Dumur Romain Maurand Simon Zihlmann
Authors on Pith no claims yet

Pith reviewed 2026-05-07 15:11 UTC · model grok-4.3

classification ❄️ cond-mat.mes-hall
keywords 3D integrationquantum dotscircuit QEDspin-photon couplingdispersive readoutMOS spin qubitsniobium nitridehybrid quantum systems
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The pith

3D integration with indium bumps and NbN films produces hybrid quantum dot devices that reach 75 MHz spin-photon coupling and high cavity quality factors.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper shows how to stack a high-impedance superconducting resonator directly above a silicon MOS double quantum dot using a dense array of indium bump connections. This approach keeps microwave losses low enough for an internal cavity quality factor above 10,000 while enabling fast dispersive readout of the charge state. The same device also reaches strong coherent coupling between the spin degree of freedom and microwave photons. These demonstrations address the material compatibility problems that have limited hybrid circuit-QED experiments with quantum dots.

Core claim

We fabricated a 3D-integrated hybrid cQED device based on a semi-industrial MOS hole double quantum dot and a high-impedance NbN resonator. For this device, we report a cavity internal quality factor above 10000 and demonstrate record sensitivity for gate-based dispersive readout of the charge degree of freedom with an SNR of 100 in 300 ns. Finally, we demonstrate strong spin-photon coupling of gs/2π = 75 MHz, which highlights the viability of 3D-integration for quantum dot based hybrid spin circuit quantum electrodynamics.

What carries the argument

The 3D-integration process based on dense indium bump interconnects at 10 μm pitch and superconducting NbN thin films that connect the quantum dot layer to the resonator while preserving low microwave losses.

If this is right

  • Cavity internal quality factors above 10000 become routinely achievable in hybrid quantum dot devices.
  • Gate-based dispersive charge readout reaches signal-to-noise ratios of 100 within 300 ns.
  • Strong spin-photon coupling of 75 MHz is attainable without sacrificing device coherence.
  • The platform supports high-fidelity spin readout and microwave-photon-mediated remote entanglement between spin qubits.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • The separation of the resonator layer from the quantum dot layer via bumps could allow independent optimization of microwave and semiconductor processing steps in larger-scale circuits.
  • Similar bump-based stacking might be adapted to couple quantum dots to other microwave elements such as parametric amplifiers or tunable couplers.
  • The achieved coupling strength opens a route to photon-mediated two-qubit gates between spins located on separate chips.

Load-bearing premise

The indium bump interconnects and 3D stacking process introduce negligible additional microwave losses, charge noise, or decoherence to the MOS quantum dots.

What would settle it

A measured cavity internal quality factor below 5000 together with coupling strength below 20 MHz in otherwise identical 3D-stacked devices would show that the integration process adds unacceptable losses or noise.

Figures

Figures reproduced from arXiv: 2604.25871 by Alain Gueugnot, Benoit Bertrand, Chafik Mhamdi, Etienne Dumur, Frederic Berger, Frederic Gustavo, Heimanu Niebojewski, Jean-Luc Thomassin, Romain Maurand, Sebastien Granel, Simon Zihlmann.

Figure 1
Figure 1. Figure 1: FIG. 1 view at source ↗
Figure 2
Figure 2. Figure 2: FIG. 2 view at source ↗
Figure 3
Figure 3. Figure 3: FIG. 3 view at source ↗
Figure 4
Figure 4. Figure 4: FIG. 4 view at source ↗
read the original abstract

Hybrid circuit quantum electrodynamics (cQED) aims at coupling various quantum degrees of freedom, among which are spin and charge degrees of freedom in gate defined quantum dots, phonons or magnons... with quantized electromagnetic fields in superconducting microwave cavities to investigate fundamental physics questions or for quantum computation and simulation. However, low microwave losses, key for many hybrid cQED experiments, are challenging to achieve given the often exotic and/or complex material stacks (e.g. semiconducting material, ferromagnets, or piezoelectric materials) required to host the various quantum degrees of freedom. In this work, we present a 3D-integration process to overcome this challenge for semi-industrial silicon MOS spin qubits. The process is based on dense indium bump interconnects at a pitch of 10 {\mu}m and superconducting thin films of Niobium Nitride (NbN). First, we report on DC and RF interconnect properties that demonstrate a high galvanic interconnection yield and internal quality factors above 105 in the single photon regime for NbN resonators interrupted by a single indium bump interconnect. Eventually, we fabricated a 3D-integrated hybrid circuit quantum electrodynamics (cQED) device based on a semi-industrial MOS hole double quantum dot and a high impedance NbN resonator. For this device, we report a cavity internal quality factor above 10000 and demonstrate record sensitivity for gate-based dispersive readout of the charge degree of freedom with an SNR of 100 in 300 ns. Finally, we demonstrate strong spin-photon coupling of gs/{2\pi} = 75 MHz, which highlights the viability of 3D-integration for quantum dot based hybrid spin circuit quantum electrodynamics and opens to high-fidelity spin readout and microwave photon-based remote spin qubit entanglement.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 1 minor

Summary. The manuscript presents a 3D-integration process for hybrid circuit-QED devices using dense indium-bump interconnects (10 μm pitch) and NbN thin films to combine a semi-industrial MOS hole double quantum dot with a high-impedance superconducting resonator. It first characterizes DC/RF properties of the interconnects, including internal quality factors above 10^5 for NbN resonators interrupted by a single bump. The integrated device is then shown to achieve a cavity internal quality factor above 10,000, a record gate-based dispersive charge readout sensitivity (SNR of 100 in 300 ns), and strong spin-photon coupling with g_s/2π = 75 MHz.

Significance. If the performance metrics hold under the 3D process, the work provides a concrete route to low-loss integration of semiconductor spin qubits with superconducting cavities, addressing a key materials challenge in hybrid cQED. The combination of high cavity Q, fast dispersive readout, and strong coupling in a single device would support scalable architectures for spin-photon interfaces and remote entanglement.

major comments (2)
  1. [Abstract / Results on integrated device] The viability conclusion for 3D integration (abstract and final paragraph) rests on the unquantified assumption that indium bumps introduce negligible additional microwave loss or charge noise. While single-bump test resonators reach Q_i > 10^5, the integrated device reports Q_i > 10,000 without a loss-budget decomposition or direct comparison of resonator Q or dot charge-noise spectra to an otherwise identical planar control device.
  2. [Final experimental section] The strong spin-photon coupling claim (g_s/2π = 75 MHz) and the assertion that the process preserves dot coherence are load-bearing for the central thesis, yet no T_2^* or echo measurements on the same dots before versus after stacking are provided to confirm that the 3D process does not degrade spin coherence.
minor comments (1)
  1. [Abstract] The notation 'gs/{2π}' in the abstract should be written consistently as g_s/2π or g_s/(2π) for clarity.

Simulated Author's Rebuttal

2 responses · 1 unresolved

We thank the referee for their careful reading and constructive comments. We address the major comments point by point below, providing the strongest honest defense of the manuscript while acknowledging its limitations. Revisions have been made where data or analysis can be added without misrepresentation.

read point-by-point responses

  1. Referee: [Abstract / Results on integrated device] The viability conclusion for 3D integration (abstract and final paragraph) rests on the unquantified assumption that indium bumps introduce negligible additional microwave loss or charge noise. While single-bump test resonators reach Q_i > 10^5, the integrated device reports Q_i > 10,000 without a loss-budget decomposition or direct comparison of resonator Q or dot charge-noise spectra to an otherwise identical planar control device.

    Authors: We agree that a full loss-budget decomposition and a side-by-side planar control would strengthen the viability claim. The single-bump NbN resonators achieve Q_i > 10^5, establishing that the indium interconnects themselves contribute low loss. The integrated device still reaches Q_i > 10,000 while delivering the reported SNR of 100 in 300 ns and g_s/2π = 75 MHz; these metrics are only possible if excess loss from the bumps remains modest. We will add an explicit loss-budget section in the revised manuscript that decomposes contributions using the test-structure data (NbN film, bump, substrate, etc.) and will qualify the viability statement to reflect the absence of a direct planar comparison. No charge-noise spectra comparison is available, but the high SNR implies acceptable noise levels for the demonstrated performance. revision: partial

  2. Referee: [Final experimental section] The strong spin-photon coupling claim (g_s/2π = 75 MHz) and the assertion that the process preserves dot coherence are load-bearing for the central thesis, yet no T_2^* or echo measurements on the same dots before versus after stacking are provided to confirm that the 3D process does not degrade spin coherence.

    Authors: The observation of strong spin-photon coupling with g_s/2π = 75 MHz in the fully integrated device directly demonstrates that the dots retain sufficient coherence for coherent interaction with the cavity. We will revise the text to make this inference explicit and to avoid any implication of direct before/after verification. However, pre- and post-stacking T_2^* or echo measurements on identical dots were not performed, as the 3D integration step occurs after dot fabrication and precludes intermediate characterization of the exact same device. revision: yes

standing simulated objections not resolved
  • Direct pre- versus post-stacking measurements of spin coherence (T_2^* or Hahn echo) on the identical quantum dots, which the fabrication sequence does not permit.

Circularity Check

0 steps flagged

No circularity: pure experimental fabrication and measurement report

full rationale

This manuscript is an experimental report on fabrication, DC/RF interconnect characterization, and device measurements for a 3D-integrated MOS quantum-dot cQED circuit. It contains no derivations, no fitted parameters renamed as predictions, no self-citation chains supporting uniqueness theorems, and no ansatzes or renamings of known results. All reported quantities (Q > 10000, SNR = 100 in 300 ns, gs/2π = 75 MHz) are direct experimental observations; the viability conclusion follows from those measurements without any reduction to the paper's own inputs by construction.

Axiom & Free-Parameter Ledger

0 free parameters · 2 axioms · 0 invented entities

No free parameters or invented entities; this is an experimental device demonstration relying on standard assumptions from superconducting circuit literature.

axioms (2)
  • domain assumption Niobium nitride thin films maintain high internal quality factors at single-photon levels when interrupted by indium bumps
    Invoked to support the reported resonator performance in the interconnect tests.
  • domain assumption Indium bump interconnects at 10 μm pitch provide low-loss galvanic and RF connections without degrading quantum dot coherence
    Central to the viability claim for the full hybrid device.

pith-pipeline@v0.9.0 · 5672 in / 1425 out tokens · 91786 ms · 2026-05-07T15:11:16.309025+00:00 · methodology

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Reference graph

Works this paper leans on

46 extracted references · 12 canonical work pages

  1. [1]

    Blais, A

    A. Blais, A. L. Grimsmo, S. Girvin, and A. Wallraff, Circuit quantum electrodynamics, Reviews of Modern Physics93, 025005 (2021)

    2021

  2. [2]

    T. Frey, P. J. Leek, M. Beck, A. Blais, T. Ihn, K. Ensslin, and A. Wallraff, Dipole coupling of a double quantum dot to a microwave resonator, Physical Review Letters108, 046807 (2012)

    2012

  3. [3]

    K. D. Petersson, L. W. McFaul, M. D. Schroer, M. Jung, J. M. Taylor, A. A. Houck, and J. R. Petta, Circuit quan- tum electrodynamics with a spin qubit, Nature490, 380 (2012)

    2012

  4. [4]

    J. J. Viennot, M. C. Dartiailh, A. Cottet, and T. Kontos, Coherent coupling of a single spin to microwave cavity photons, Science349, 408 (2015)

    2015

  5. [5]

    Stockklauser, P

    A. Stockklauser, P. Scarlino, J. Koski, S. Gasparinetti, C. Andersen, C. Reichl, W. Wegscheider, T. Ihn, K. En- sslin, and A. Wallraff, Strong coupling cavity QED with gate-defined double quantum dots enabled by a high impedance resonator, Physical Review X7, 011030 (2017)

    2017

  6. [6]

    X. Mi, J. V. Cady, D. M. Zajac, P. W. Deelman, and J. R. Petta, Strong coupling of a single electron in silicon to a microwave photon, Science355, 156 (2017)

    2017

  7. [7]

    De Palma, F

    F. De Palma, F. Oppliger, W. Jang, S. Bosco, M. Jan´ ık, S. Calcaterra, G. Katsaros, G. Isella, D. Loss, and P. Scarlino, Strong hole-photon coupling in planar ge for probing charge degree and strongly correlated states, Nature Communications15, 10.1038/s41467-024-54520- 7 (2024)

    work page doi:10.1038/s41467-024-54520- 2024

  8. [8]

    Jan´ ık, K

    M. Jan´ ık, K. Roux, C. Borja-Espinosa, O. Sagi, A. Baghdadi, T. Adletzberger, S. Calcaterra, M. Bo- tifoll, A. Garz´ on Manj´ on, J. Arbiol, D. Chrastina, G. Isella, I. M. Pop, and G. Katsaros, Strong charge-photon coupling in planar germanium enabled by granular aluminium superinductors, Nature Com- munications16, 10.1038/s41467-025-57252-4 (2025), http...

    work page doi:10.1038/s41467-025-57252-4 2025

  9. [9]

    X. Mi, M. Benito, S. Putz, D. M. Zajac, J. M. Taylor, G. Burkard, and J. R. Petta, A coherent spin-photon interface in silicon, Nature555, 599 (2018)

    2018

  10. [10]

    Samkharadze, G

    N. Samkharadze, G. Zheng, N. Kalhor, D. Brousse, A. Sammak, U. C. Mendes, A. Blais, G. Scappucci, and L. M. K. Vandersypen, Strong spin-photon coupling in silicon, Science359, 1123 (2018)

    2018

  11. [11]

    A. J. Landig, J. V. Koski, P. Scarlino, U. C. Mendes, A. Blais, C. Reichl, W. Wegscheider, A. Wallraff, K. En- 8 sslin, and T. Ihn, Coherent spin–photon coupling using a resonant exchange qubit, Nature560, 179 (2018)

    2018

  12. [12]

    C. X. Yu, S. Zihlmann, J. C. Abadillo-Uriel, V. P. Michal, N. Rambal, H. Niebojewski, T. Bedecarrats, M. Vinet, . Dumur, M. Filippone, B. Bertrand, S. De Franceschi, Y.-M. Niquet, and R. Maurand, Strong coupling between a photon and a hole spin in silicon, Nature Nanotechnol- ogy18, 741 (2023)

    2023

  13. [13]

    Borjans, X

    F. Borjans, X. G. Croot, X. Mi, M. J. Gullans, and J. R. Petta, Resonant microwave-mediated interactions between distant electron spins, Nature577, 195 (2019)

    2019

  14. [14]

    Harvey-Collard, J

    P. Harvey-Collard, J. Dijkema, G. Zheng, A. Sammak, G. Scappucci, and L. M. Vandersypen, Coherent spin- spin coupling mediated by virtual microwave photons, Physical Review X12, 021026 (2022)

    2022

  15. [15]

    Dijkema, X

    J. Dijkema, X. Xue, P. Harvey-Collard, M. Rimbach- Russ, S. L. de Snoo, G. Zheng, A. Sammak, G. Scappucci, and L. M. K. Vandersypen, Cavity-mediated iswap os- cillations between distant spins, Nature Physics21, 168 (2024)

    2024

  16. [16]

    F. D. Palma, E. Acinapura, W. Jang, F. Oppliger, R. Krishnan, A. Nigro, I. Zardo, and P. Scarlino, Low- loss frequency-tunable josephson junction array cavities on ge/sige heterostructures with a tapered etching ap- proach, , http://arxiv.org/abs/2512.17812v1 (2025)

    work page arXiv 2025

  17. [17]

    Foxen, J

    B. Foxen, J. Y. Mutus, E. Lucero, R. Graff, A. Megrant, Y. Chen, C. Quintana, B. Burkett, J. Kelly, E. Jeffrey, Y. Yang, A. Yu, K. Arya, R. Barends, Z. Chen, B. Chiaro, A. Dunsworth, A. Fowler, C. Gidney, M. Giustina, T. Huang, P. Klimov, M. Neeley, C. Neill, P. Roushan, D. Sank, A. Vainsencher, J. Wenner, T. C. White, and J. M. Martinis, Qubit compatible...

    2017

  18. [18]

    Rosenberg, D

    D. Rosenberg, D. Kim, R. Das, D. Yost, S. Gustavs- son, D. Hover, P. Krantz, A. Melville, L. Racz, G. O. Samach, S. J. Weber, F. Yan, J. L. Yoder, A. J. Kerman, and W. D. Oliver, 3D integrated supercon- ducting qubits, npj Quantum Information3, 1 (2017), https://arxiv.org/abs/1706.04116 arXiv:1706.04116

    work page arXiv 2017

  19. [19]

    C. R. Conner, A. Bienfait, H.-S. Chang, M.-H. Chou, . Dumur, J. Grebel, G. A. Peairs, R. G. Povey, H. Yan, Y. P. Zhong, and A. N. Cleland, Superconducting qubits in a flip-chip architecture, Applied Physics Letters118, 10.1063/5.0050173 (2021)

    work page doi:10.1063/5.0050173 2021

  20. [20]

    Kosen, H.-X

    S. Kosen, H.-X. Li, M. Rommel, D. Shiri, C. War- ren, L. Gr¨ onberg, J. Salonen, T. Abad, J. Bizn´ arov´ a, M. Caputo, L. Chen, K. Grigoras, G. Johansson, A. F. Kockum, C. Kriˇ zan, D. P. Lozano, G. J. Norris, A. Os- man, J. Fern´ andez-Pend´ as, A. Ronzani, A. F. Roud- sari, S. Simbierowicz, G. Tancredi, A. Wallraff, C. Eich- ler, J. Govenius, and J. Byl...

    2022

  21. [21]

    Kosen, H.-X

    S. Kosen, H.-X. Li, M. Rommel, R. Rehammar, M. Ca- puto, L. Gr¨ onberg, J. Fern´ andez-Pend´ as, A. F. Kockum, J. Bizn´ arov´ a, L. Chen, C. Kriˇ zan, A. Nylander, A. Os- man, A. F. Roudsari, D. Shiri, G. Tancredi, J. Govenius, and J. Bylander, Signal crosstalk in a flip-chip quantum processor, PRX Quantum5, 030350 (2024)

    2024

  22. [22]

    Holman, D

    N. Holman, D. Rosenberg, D. Yost, J. L. Yoder, R. Das, W. D. Oliver, R. McDermott, and M. A. Eriksson, 3D integration and measurement of a semiconductor double quantum dot with a high-impedance TiN resonator, npj Quantum Information7, 1 (2021)

    2021

  23. [23]

    Maurand, X

    R. Maurand, X. Jehl, D. Kotekar-Patil, A. Corna, H. Bo- huslavskyi, R. Lavi´ eville, L. Hutin, S. Barraud, M. Vinet, M. Sanquer, and Others, A CMOS silicon spin qubit, Na- ture communications7, 1 (2016)

    2016

  24. [24]

    N. Piot, B. Brun, V. Schmitt, S. Zihlmann, V. P. Michal, A. Apra, J. C. Abadillo-Uriel, X. Jehl, B. Bertrand, H. Niebojewski, L. Hutin, M. Vinet, M. Urdampilleta, T. Meunier, Y. M. Niquet, R. Maurand, and S. D. Franceschi, A single hole spin with enhanced coherence in natural silicon, Nature Nanotechnology17, 1072 (2022), https://arxiv.org/abs/2201.08637 ...

    work page arXiv 2022

  25. [25]

    Bassi, E

    M. Bassi, E. A. Rodriguez-Mena, B. Brun, S. Zihlmann, T. Nguyen, V. Champain, J. C. Abadillo-Uriel, B. Bertrand, H. Niebojewski, R. Maurand, and Others, Optimal operation of hole spin qubits, Nature Physics , 1 (2025)

    2025

  26. [26]

    C. X. Yu, S. Zihlmann, G. Troncoso Fern´ andez-Bada, J.-L. Thomassin, F. Gustavo, ´E. Dumur, and R. Mau- rand, Magnetic field resilient high kinetic inductance superconducting niobium nitride coplanar waveguide resonators, Applied Physics Letters118, 054001 (2021), https://arxiv.org/abs/https://doi.org/10.1063/5.0039945 https://doi.org/10.1063/5.0039945

    work page doi:10.1063/5.0039945 2021

  27. [27]

    Megrant, C

    A. Megrant, C. Neill, R. Barends, B. Chiaro, Y. Chen, L. Feigl, J. Kelly, E. Lucero, M. Mariantoni, P. J. J. O’Malley, D. Sank, A. Vainsencher, J. Wenner, T. C. White, Y. Yin, J. Zhao, C. J. Palmstrøm, J. M. Martinis, and A. N. Cleland, Planar superconducting resonators with internal quality factors above one million, Applied Physics Letters100, 113510 (2012)

    2012

  28. [28]

    A. Bahr, M. Boselli, B. Huard, and A. Bienfait, Improv- ing magnetic-field resilience of nbtin planar resonators using a hard-mask fabrication technique, Applied Physics Letters124, 10.1063/5.0191393 (2024)

    work page doi:10.1063/5.0191393 2024

  29. [29]

    C. G. L. Bøttcher, E. ¨Onder, T. Connolly, J. Zhao, C. Kvande, D. Q. Wang, P. D. Kurilovich, S. Vaitiek˙ enas, L. I. Glazman, H. X. Tang, and M. H. Devoret, A trans- mon qubit realized by exploiting the superconductor- insulator transition 10.48550/ARXIV.2510.19983 (2025), https://arxiv.org/abs/2510.19983 arXiv:2510.19983 [quant-ph]

    work page doi:10.48550/arxiv.2510.19983 2025

  30. [30]

    C. Roy, S. Frasca, and P. Scarlino, Magnetic-field- resilient high-impedance high-kinetic-inductance super- conducting resonators, Physical Review Applied25, 10.1103/76rr-lx9l (2026)

    work page doi:10.1103/76rr-lx9l 2026

  31. [31]

    Samkharadze, A

    N. Samkharadze, A. Bruno, P. Scarlino, G. Zheng, D. P. DiVincenzo, L. DiCarlo, and L. M. K. Vandersypen, High-Kinetic-Inductance Superconducting Nanowire Resonators for Circuit QED in a Magnetic Field, Phys. Rev. Applied5, 044004 (2016)

    2016

  32. [32]

    Zheng, N

    G. Zheng, N. Samkharadze, M. L. Noordam, N. Kalhor, D. Brousse, A. Sammak, G. Scappucci, and L. M. K. Vandersypen, Rapid gate-based spin read-out in silicon using an on-chip resonator, Nature Nanotechnology14, 742 (2019)

    2019

  33. [33]

    D. J. Ibberson, T. Lundberg, J. A. Haigh, L. Hutin, B. Bertrand, S. Barraud, C.-M. Lee, N. A. Stel- mashenko, G. A. Oakes, L. Cochrane, J. W. Robin- son, M. Vinet, M. F. Gonzalez-Zalba, and L. A. Ibber- son, Large Dispersive Interaction between a CMOS Dou- ble Quantum Dot and Microwave Photons, PRX Quan- tum2, 020315 (2021), https://arxiv.org/abs/2004.003...

    work page arXiv 2021

  34. [34]

    V. P. Michal, J. C. Abadillo-Uriel, S. Zihlmann, R. Mau- rand, Y.-M. Niquet, and M. Filippone, Tunable hole spin- photon interaction based on g-matrix modulation, Phys- ical Review B107, l041303 (2023)

    2023

  35. [35]

    Y. Fang, P. Philippopoulos, D. Culcer, W. A. Coish, and S. Chesi, Recent advances in hole-spin qubits OPEN AC- CESS, Materials for Quantum Technology3(2023)

    2023

  36. [36]

    Bonsen, P

    T. Bonsen, P. Harvey-Collard, M. Russ, J. Dijkema, A. Sammak, G. Scappucci, and L. M. K. Vandersypen, Probing the jaynes-cummings ladder with spin circuit quantum electrodynamics, Phys. Rev. Lett.130, 137001 (2023)

    2023

  37. [37]

    Renaud, C

    P. Renaud, C. Dubarry, N. Bresson, E. Deschaseaux, F. Fournel, C. Morales, K. Abadie, C. Thomas, and J. Charbonnier, Fine pitch nb-nb direct bonding for quantum applications, in2024 IEEE 74th Electronic Components and Technology Conference (ECTC)(IEEE, 2024)

    2024

  38. [38]

    A. West, B. Hensen, A. Jouan, T. Tanttu, C.-H. Yang, A. Rossi, M. F. Gonzalez-Zalba, F. Hudson, A. Morello, D. J. Reilly, and A. S. Dzurak, Gate-based single-shot readout of spins in silicon, Nature Nanotechnology14, 437 (2019)

    2019

  39. [39]

    Urdampilleta, D

    M. Urdampilleta, D. J. Niegemann, E. Chanrion, B. Jadot, C. Spence, P.-A. Mortemousque, C. B¨ auerle, L. Hutin, B. Bertrand, S. Barraud, R. Maurand, M. San- quer, X. Jehl, S. De Franceschi, M. Vinet, and T. Me- unier, Gate-based high fidelity spin readout in a cmos device, Nature Nanotechnology14, 737 (2019)

    2019

  40. [40]

    Chessari, E

    A. Chessari, E. A. Rodr´ ıguez-Mena, J. C. Abadillo-Uriel, V. Champain, S. Zihlmann, R. Maurand, Y.-M. Niquet, and M. Filippone, Unifying floquet theory of longitudi- nal and dispersive readout, Phys. Rev. Lett.134, 037003 (2025)

    2025

  41. [41]

    Corrigan, B

    J. Corrigan, B. Harpt, N. Holman, R. Ruskov, P. Marciniec, D. Rosenberg, D. Yost, R. Das, W. D. Oliver, R. McDermott, C. Tahan, M. Friesen, and M. Eriksson, Longitudinal coupling between a si/si1−xgex double quantum dot and an off-chip TiN res- onator, Phys. Rev. Appl.20, 064005 (2023)

    2023

  42. [42]

    Champain, S

    V. Champain, S. Zihlmann, A. Chessari, B. Bertrand, H. Niebojewski, E. Dumur, X. Jehl, V. Schmitt, B. Brun, C. Winkelmann, Y. Niquet, M. Filippone, S. De Franceschi, and R. Maurand, Parametric longitu- dinal coupling of a semiconductor charge qubit and an rf resonator, Phys. Rev. Appl.23, 034067 (2025)

    2025

  43. [43]

    Harpt, J

    B. Harpt, J. Corrigan, N. Holman, P. Marciniec, D. Rosenberg, D. Yost, R. Das, R. Ruskov, C. Tahan, W. D. Oliver, R. McDermott, M. Friesen, and M. A. Eriksson, Ultra-dispersive resonator readout of a quantum-dot qubit using longitudinal coupling, npj Quantum Information11, 10.1038/s41534-025-00962-w (2025)

    work page doi:10.1038/s41534-025-00962-w 2025

  44. [44]

    Jarjat, B

    L. Jarjat, B. Hue, T. Philippe-Kagan, B. Neukel- mance, J. Craquelin, A. Th´ ery, C. Fruy, G. Abulizi, J. Becdelievre, M. M. Desjardins, T. Kontos, and M. R. Delbecq, Parametric drive of a double quantum dot in a cavity, Phys. Rev. Lett.135, 153603 (2025)

    2025

  45. [45]

    MAILLIART, S

    O. MAILLIART, S. RENET, F. BERGER, A. GUEUG- NOT, S. BISOTTO, S. GOUT, L. MATHIEU, Y. GOIRAN, and T. CHAIRA, Assembly of very fine pitches infrared focal plane array with indium micro balls, in2019 22nd European Microelectronics and Pack- aging Conference & Exhibition (EMPC)(IEEE, 2019)

    2019

  46. [46]

    Feautrier, E

    C. Feautrier, E. Deschaseaux, A. Gueugnot, J. Charbon- nier, A. Plihon, L. Dupr´ e, F. Henry, F. Berger, A. Pagot, S. Renet, O. Mailliart, and C. Thomas, Characterizations of indium interconnects for 3d quantum assemblies, in 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)(IEEE, 2023)

    2023