A 3D-integrated silicon MOS double quantum dot device with high-impedance NbN resonator achieves cavity Q above 10,000, dispersive charge readout SNR of 100 in 300 ns, and spin-photon coupling gs/2π = 75 MHz.
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2 Pith papers cite this work. Polarity classification is still indexing.
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2026 2verdicts
UNVERDICTED 2representative citing papers
Experimental demonstration of a WSi weak link in a 3D RF-SQUID showing non-sinusoidal current-phase relation with measured relaxation times of trapped persistent-current states.
citing papers explorer
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3D integration of a hybrid quantum dot circuit-QED device for fast gate dispersive charge readout and coherent spin-photon coupling
A 3D-integrated silicon MOS double quantum dot device with high-impedance NbN resonator achieves cavity Q above 10,000, dispersive charge readout SNR of 100 in 300 ns, and spin-photon coupling gs/2π = 75 MHz.
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WSi weak link element with a non-sinusoidal current-phase relation
Experimental demonstration of a WSi weak link in a 3D RF-SQUID showing non-sinusoidal current-phase relation with measured relaxation times of trapped persistent-current states.