Ni doping in Cd1-xMnxS thin films increases crystallinity and photoconductivity while reducing the optical band gap from 2.72 to 2.62 eV with 75-90% transmittance in visible-NIR.
Enhancement of optical transmittance and electrical resistivity of post-annealed ito thin films rf sputtered on si
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Influence of Ni Doping on the Structural, Morphological, Optical, and Electrical Properties of Nanocrystalline Cd1-xMnxS Thin Films
Ni doping in Cd1-xMnxS thin films increases crystallinity and photoconductivity while reducing the optical band gap from 2.72 to 2.62 eV with 75-90% transmittance in visible-NIR.