A modified boost converter applies accelerated stress to GaN HEMTs, showing logarithmic R_DS(on) rise consistent with existing models and validating phonon scattering energy at 70V and 100V.
Room-temperature mobility above 2200cm 2/v· s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure
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A Modified Boost Converter Topology for Dynamic Characterization of Hot Carrier and Trap Generation in GaN HEMTs
A modified boost converter applies accelerated stress to GaN HEMTs, showing logarithmic R_DS(on) rise consistent with existing models and validating phonon scattering energy at 70V and 100V.