In a U-shaped GaAs conductor, the simulated electron temperature reaches about 2000 K at the inner corner while the lattice stays near 330 K, a contrast attributed to the low electron heat capacity of semiconductors.
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Simulation of temperature profile for the electron- and the lattice-systems in laterally structured layered conductors
In a U-shaped GaAs conductor, the simulated electron temperature reaches about 2000 K at the inner corner while the lattice stays near 330 K, a contrast attributed to the low electron heat capacity of semiconductors.