MBE-grown InAs quantum dots in a relaxed InGaAs matrix on graded GaAs buffers emit telecom O/C band single photons with linewidths down to 50 µeV, FSS near 10 µeV, and g2(0) down to 0.08.
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Telecom quantum dots on GaAs substrates as integration-ready high performance single-photon sources
MBE-grown InAs quantum dots in a relaxed InGaAs matrix on graded GaAs buffers emit telecom O/C band single photons with linewidths down to 50 µeV, FSS near 10 µeV, and g2(0) down to 0.08.