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REVIEW 1 major objections 5 minor 39 references

Telecom quantum dots on GaAs substrates as integration-ready high performance single-photon sources

T0 review · 1 major / 5 minor · reviewed 2026-08-07 · deepseek-v4-flash

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Pith's one-line read This paper reports InAs quantum dots grown by MBE in an InGaAs matrix on a graded GaAs buffer that emit telecom-wavelength single photons with linewidths as low as 50 µeV and $g^{(2)}(0)$ as low as 0.08.

desk verdict A useful experimental advance on telecom QDs with credible FSS and g2 data, but the headline linewidth claim is an upper bound until deconvolution or resonant excitation is done. read the letter →

arxiv 2505.22886 v1 pith:MVUFWVS5 submitted 2025-05-28 cond-mat.mes-hall physics.app-phquant-ph

Beatrice Costa , Bianca Scaparra , Xiao Wei , Hubert Riedl , Gregor Koblmüller , Eugenio Zallo , Jonathan Finley , Lukas Hanschke
show 1 more author
Kai Müller
This is my paper
classification cond-mat.mes-hallphysics.app-phquant-ph PACS 78.67.Hc42.50.Ar81.15.Hi
keywords quantumdotstelecomO-bandC-bandsingle-photonsourcemolecularbeamepitaxymetamorphicbufferfinestructuresplittingphotonantibunching
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper claims that InAs quantum dots grown by molecular beam epitaxy inside an InGaAs matrix on a compositionally graded InGaAs buffer over a GaAs substrate can serve as high-performance single-photon sources in the telecom O and C bands. The authors measure excitonic linewidths as low as 50 µeV, close to the spectrometer resolution limit, fine-structure splittings down to about 10 µeV, and $g^{(2)}(0)$ values as low as 0.08, all under non-resonant excitation. These numbers improve on earlier MBE-grown quantum dots on graded GaAs buffers and are competitive with InP-based telecom dots, while the GaAs platform leaves room for high-contrast DBRs and electrical contacts. A sympathetic reader cares because telecom-band single-photon sources are a limiting ingredient for fiber-based quantum communication, and the reported roadmap is integration into electrically contacted nanocavities.

What carries the argument

The central object is the metamorphic heterostructure: a compositionally graded InGaAs buffer, a mostly relaxed InGaAs matrix of fixed indium content in which the InAs quantum dots are embedded, a 20 nm InAlAs layer that blocks dislocation propagation, and a GaAs/AlAs DBR underneath that forms a $3\lambda$ cavity. The graded buffer shifts the emission wavelength into the telecom O and C bands, and the relaxed matrix keeps dislocations and residual strain away from the dot layer, which the paper argues is what produces narrow lines and small fine structure splittings without resonant excitation or charge-environment control. The DBR both enhances extraction and gives clean spectra with high signal-to-noise ratio for fitting.

What would settle it

Resonant excitation or high-resolution spectroscopy on the same dots would settle the central claim: if the deconvolved or resonantly measured linewidths stay near 50–62 µeV, the narrow-line conclusion holds; if they drop well below that, the reported widths are dominated by the spectrometer or by spectral diffusion rather than by the emitters themselves.

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Extended reading notes

Core claim

The central claim is that embedding the InAs quantum dots in a mostly relaxed InGaAs matrix with fixed indium content, grown on a compositionally graded InGaAs buffer on a GaAs substrate, yields telecom emitters whose optical quality improves on earlier MBE-grown dots on graded GaAs buffers and is competitive with InP-based dots. On sample O (O band) the narrowest measured exciton line is 50.0 µeV and on sample C (C band) 62.0 µeV, with median linewidths near 120 µeV; the smallest fine structure splittings are 10.0 and 12.0 µeV with medians of 28.0 and 34.0 µeV. Exciton lifetimes fall between about 0.9 and 2.5 ns, and second-order correlation measurements give $g^{(2)}(0)=0.08\pm0.01$ (O band) and $0.19\pm0.02$ (C band), confirming single-photon emission. The authors attribute the improvement to reduced dislocation density and residual strain near the dots, which makes the dots more symmetric and the charge environment cleaner, and they present the structure as a route to electrically contacted nanocavities.

Load-bearing premise

The reported linewidths are close to what the measuring instrument can resolve, so the claim that the emitters themselves are this narrow assumes that the instrument and slow environmental fluctuations are not what sets the observed widths.

Editorial extensions

If this is right

  • The same MBE-grown GaAs platform can be used to make deterministic telecom single-photon sources without InP substrates and their low-contrast distributed Bragg reflectors.
  • The low fine-structure splittings, median 28–34 µeV with minima near 10 µeV, put polarization-entangled photon-pair generation within reach after strain tuning.
  • The $g^{(2)}(0)$ values of 0.08 and 0.19 under continuous-wave excitation establish single-photon purity even though pulsed non-resonant excitation shows carrier-recapture artifacts.
  • The heterostructure is designed so that the next integration steps—resonant excitation, piezoelectric strain tuning, and nanocavity embedding—can be applied to the same dots.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • A testable extension of the paper's logic is that the true homogeneous linewidths are substantially below 50 µeV; a resonant-excitation or deconvolution measurement would reveal how much performance gain remains on the table.
  • If the reduction in dislocation density is as effective as claimed, the same buffer design could be adapted to other emission wavelengths by changing the indium content of the matrix, covering additional telecom bands.
  • The authors' own recapture data suggest that moving to quasi-resonant or resonant excitation would sharpen the pulsed $g^{(2)}(0)$ measurement; quantifying that improvement is a direct next experiment the paper gestures at.
  • A further integration inference is that the stack's planar, contacted geometry could eventually host electrically injected single-photon emission, a functionality not demonstrated here.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

1 major / 5 minor

Summary. The manuscript reports detailed optical characterization of molecular-beam-epitaxy-grown InAs quantum dots embedded in a relaxed InGaAs matrix on compositionally graded InGaAs buffers on GaAs substrates, with emission in the telecom O and C bands. The authors measure spectral FWHM values as low as 50 µeV, fine-structure splittings close to 10 µeV, exciton lifetimes in the 1–2 ns range, and CW g(2)(0) values as low as 0.08. They compare these metrics with literature values for other telecom QD platforms and argue that the growth approach enables future electrically contacted nanocavities. The paper includes statistics over 10–18 QDs per band and discusses limitations such as recapture dynamics under pulsed excitation and the need for future resonant-excitation studies.

Significance. If the headline claims hold, the paper would constitute a useful advance in telecom-band single-photon sources on GaAs substrates, with a plausible route toward cavity and electrical integration. The strengths are the systematic multi-QD statistics, the DBR-enhanced collection, the FSS values that compare favorably with droplet-epitaxy QDs, and the explicit acknowledgment of recapture dynamics and of the need for resonant excitation in future work. However, the central linewidth claim is not quantitatively established as an emitter-linewidth advance: the FWHM values are obtained under non-resonant excitation without deconvolution of the instrument response, and the reported minima approach the spectrometer resolution limit. The manuscript is otherwise sound in reporting measured values, but the abstract's 'high performance' claim and the literature comparison rest on this unresolved point, so the paper requires revision before the central claim can be accepted.

major comments (1)
  1. [Section III, Fig. 2f] The linewidth statistics are reported with an informal outlier-handling statement: 'With the exception of some outliers, most data points are within the 60.0 µeV–150.0 µeV range.' No criterion is given for identifying outliers, and it is unclear whether the median and minimum values include or exclude these points. Please specify the outlier criterion and report the statistics with and without the excluded points so the reader can assess the robustness of the median and minimum claims.
minor comments (5)
  1. [Section III, first paragraph] The sentence 'To asses our results' should read 'To assess our results'.
  2. [Methods] The detector is described as an 'InGaAs CDD iDus 419'; this should be 'InGaAs CCD iDus 419'.
  3. [Section V, Fig. 4c–d] The pulsed g(2)(0) measurements are shown with a visible dip in the center peak, but no pulsed g(2)(0) value is reported and no fitting model is described. Please state whether a quantitative pulsed g(2)(0) was extracted or note explicitly that these data are used only qualitatively, with the CW values carrying the quantitative single-photon claim.
  4. [Section III, Fig. 2a–b] The assignment of emission lines to X, trion, and XX is stated to be based on power- and polarization-dependent measurements, but the power-dependent data are not shown. Adding a representative power series or citing a figure would strengthen the assignment.
  5. [General] The manuscript does not provide raw data or fitting parameters. Depositing the spectra, FSS fits, and lifetime decays as supplementary data would improve reproducibility and would help readers evaluate the linewidth and FSS claims.

Circularity Check

0 steps flagged · score 0.0 of 10

No circularity: all headline metrics are direct measurements, and the linewidth caveat is an acknowledged measurement limitation rather than a circular step.

full rationale

The paper contains no derivation chain in which an output is equivalent to an input by construction. Every headline quantity—FWHM linewidths, fine-structure splittings, exciton lifetimes, and g(2)(0) values—is extracted by standard fitting of measured micro-photoluminescence, polarization-resolved, time-resolved, and Hanbury Brown and Twiss data. The measured FWHM values are reported as measured linewidths under non-resonant excitation, and the paper itself flags the limitation in the Conclusions: 'a transition to resonant excitation schemes would be beneficial, since it would allow for better quantification of the transition linewidth.' This is an experimental-accuracy caveat affecting how the linewidth numbers should be interpreted and compared, not a case where a fitted parameter is renamed as a prediction or where a result is defined in terms of its own input. The self-citations to Refs. [20,26] are used for growth recipes and In-content calibration of the heterostructure; the optical properties reported here are new measurements on the resulting samples, so those citations are not load-bearing in a logical sense. There is no invoked uniqueness theorem from the authors, no ansatz smuggled in via citation, and no renaming of a known empirical pattern as a new organization. Under the hard rules requiring a quotable reduction to its own inputs, no circular step can be exhibited; the appropriate finding is no significant circularity.

Assumptions & free parameters 0 free parameters · 4 assumptions · 0 invented entities

No ad hoc free parameters are introduced; all reported quantities are direct outputs of standard fits. The main unverified inputs are the relaxed-matrix structural premise and the growth-calibration-based composition profile, both inherited from prior work. No new physical entities are postulated.

assumptions (4)
  • domain assumption The fixed-indium InGaAs matrix grown on the graded buffer is mostly relaxed and reduces dislocation density and residual strain near the QD layer.
    Invoked in the Introduction and Conclusions and inherited from refs [24-26]; not directly verified by structural data in this paper beyond an AFM scan of a reference sample (Fig. 1c).
  • domain assumption The In content profiles in Fig. 1b, calculated from In-flux equivalent growth rates [26], correctly represent the actual composition of the grown layers.
    Used to describe the buffer and matrix; no direct composition measurement such as XRD or EDX is reported in this paper.
  • ad hoc to paper The measured spectral linewidths under non-resonant excitation are treated as representative of emitter linewidth despite approaching the spectrometer resolution limit.
    The headline 'linewidths as low as 50 µeV' assumes the instrument does not dominate; resonant excitation or deconvolution is not performed.
  • domain assumption Exciton, trion, and biexciton assignments based on power and polarization dependence are correct.
    The FSS and lifetime claims depend on these assignments (Section III).

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Cite this review

Pith. "Pith review of Telecom quantum dots on GaAs substrates as integration-ready high performance single-photon sources." pith.science (2026). https://pith.science/paper/MVUFWVS5

@misc{pith2026250522886,
  author       = {Pith},
  title        = {Pith review of: Telecom quantum dots on GaAs substrates as integration-ready high performance single-photon sources},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/MVUFWVS5}},
  note         = {Machine review of arXiv:2505.22886}
}
abstract

The development of deterministic single photon sources emitting in the telecommunication bands is a key challenge for quantum communication and photonic quantum computing. Here, we investigate the optical properties and single-photon emission of molecular beam epitaxy grown semiconductor quantum dots emitting in the telecom O- and C- bands. The quantum dots are embedded in a InGaAs matrix with fixed indium content grown on top of a compositionally graded InGaAs buffer. This structure allows for the future implementation of electrically contacted nanocavities to enable high-quality and bright QD emission. In detailed optical characterizations we observe linewidths as low as $ 50 \mu$eV, close to the spectrometer resolution limit, low fine structure splittings close to $ 10 \mu$eV, and $g^{(2)} (0)$ values as low as $0.08$. These results advance the current performance metrics for MBE-grown quantum dots on GaAs substrates emitting in the telecom bands and showcase the potential of the presented heterostructures for further integration into photonic devices.

Figures

Figures reproduced from arXiv: 2505.22886 by the authors.

Figure 1
Figure 1. FIG. 1. a) Schematic of the sample structure: the InAs QDs [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. a and 2b present representative µ-PL spec￾tra from sample C and sample O, respectively. Sharp emission lines resulting from different excitonic transi￾tions are visible. Those peaks are attributed to neu￾tral exciton (X), trion, and biexciton (XX) transitions. This assigment is made based on power- and polarization￾dependent measurements. Importantly, as the DBR en￾hances the extraction efficiency it enables clean s… view at source ↗
Figure 3
Figure 3. FIG. 3. a),b) Lifetime measurements of X and XX transitions [PITH_FULL_IMAGE:figures/full_fig_p004_3.png] view at source ↗
Figures from the paper (1 more)
Figure 4
Figure 4. Figure 4: FIG. 4. a),b) CW-excitation g [PITH_FULL_IMAGE:figures/full_fig_p005_4.png]

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Works this paper leans on

39 extracted references · 38 canonical work pages

  1. [1]

    Senellart, G

    P. Senellart, G. Solomon, and A. White, High- performance semiconductor quantum-dot single-photon sources, Nature Nanotechnology12, 1026 (2017)

    2017

  2. [2]

    Hanschke, K

    L. Hanschke, K. A. Fischer, S. Appel, D. Lukin, J. Wierzbowski, S. Sun, R. Trivedi, J. Vučković, J. J. Fin- ley, and K. Müller, Quantum dot single-photon sources with ultra-low multi-photon probability, npj Quantum Information4, 43 (2018)

    work page 2018

  3. [3]

    Sbresny, L

    F. Sbresny, L. Hanschke, E. Schöll, W. Rauhaus, B. Scaparra, K. Boos, E. Zubizarreta Casalengua, H. Riedl, E. Del Valle, J. J. Finley, K. D. Jöns, and K.Müller,Stimulatedgenerationofindistinguishablesin- gle photons from a quantum ladder system, Physical Re- view Letters128, 093603 (2022)

    work page 2022

  4. [4]

    S. F. C. Da Silva, G. Undeutsch, B. Lehner, S. Manna, T. M. Krieger, M. Reindl, C. Schimpf, R. Trotta, and A. Rastelli, GaAs quantum dots grown by droplet etch- ing epitaxy as quantum light sources, Applied Physics Letters119, 120502 (2021)

    work page 2021

  5. [5]

    Schöll, L

    E. Schöll, L. Hanschke, L. Schweickert, K. D. Zeuner, M. Reindl, S. F. Covre Da Silva, T. Lettner, R. Trotta, J. J. Finley, K. Müller, A. Rastelli, V. Zwiller, and K. D. Jöns, Resonance fluorescence of GaAs quantum dots with near-unity photon indistinguishability, Nano Letters19, 2404 (2019)

    work page 2019

  6. [6]

    D. A. Vajner, L. Rickert, T. Gao, K. Kaymazlar, and T. Heindel, Quantum communication using semiconduc- tor quantum dots, Advanced Quantum Technologies5, 2100116 (2022)

    work page 2022

  7. [7]

    Basso Basset, M

    F. Basso Basset, M. Valeri, E. Roccia, V. Muredda, D. Poderini, J. Neuwirth, N. Spagnolo, M. B. Rota, G. Carvacho, F. Sciarrino, and R. Trotta, Quantum key distribution with entangled photons generated on de- mand by a quantum dot, Science Advances7, eabe6379 (2021)

    work page 2021

  8. [8]

    Gazzano, S

    O. Gazzano, S. Michaelis De Vasconcellos, C. Arnold, A. Nowak, E. Galopin, I. Sagnes, L. Lanco, A. Lemaître, and P. Senellart, Bright solid-state sources of indis- tinguishable single photons, Nature Communications4, 1425 (2013)

    work page 2013

Show all 39 references
  1. [9]

    Kolatschek, S

    S. Kolatschek, S. Hepp, M. Sartison, M. Jetter, P. Mich- ler, and S. L. Portalupi, Deterministic fabrication of cir- cular Bragg gratings coupled to single quantum emitters via the combination ofin-situoptical lithography and electron-beam lithography, Journal of Applied Physi...

    2019

  2. [10]

    Sapienza, M

    L. Sapienza, M. Davanço, A. Badolato, and K. Srini- vasan, Nanoscale optical positioning of single quantum dots for bright and pure single-photon emission, Nature Communications6, 7833 (2015)

    2015

  3. [11]

    Gyger, K

    S. Gyger, K. D. Zeuner, T. Lettner, S. Bensoussan, M. Carlnäs, L. Ekemar, L. Schweickert, C. R. Hedlund, M. Hammar, T. Nilsson, J. Almlöf, S. Steinhauer, G. V. Llosera, and V. Zwiller, Metropolitan single-photon dis- tribution at 1550 nm for random number generation, Ap- plied...

    2022

  4. [12]

    Benyoucef, M

    M. Benyoucef, M. Yacob, J. P. Reithmaier, J. Kettler, and P. Michler, Telecom-wavelength (1.5µm) single- photon emission from InP-based quantum dots, Applied Physics Letters103, 162101 (2013)

    2013

  5. [13]

    Holewa, S

    P. Holewa, S. Kadkhodazadeh, M. Gawełczyk, P. Baluta, A. Musiał, V. G. Dubrovskii, M. Syperek, and E. Semen- ova, Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: mor- phology, opticalandelectronicproperties,Nanophotonics 11, 15...

    2022

  6. [14]

    Müller, J

    T. Müller, J. Skiba-Szymanska, A. B. Krysa, J. Huwer, M. Felle, M. Anderson, R. M. Stevenson, J. Heffer- nan, D. A. Ritchie, and A. J. Shields, A quantum light- emitting diode for the standard telecom window around 1,550 nm, Nature Communications9, 862 (2018)

    2018

  7. [15]

    Holewa, D

    P. Holewa, D. A. Vajner, E. Zięba-Ostój, M. Wasiluk, B. Gaál, A. Sakanas, M. Burakowski, P. Mrowiński, B. Krajnik, M. Xiong, K. Yvind, N. Gregersen, A. Mu- siał, A. Huck, T. Heindel, M. Syperek, and E. Semenova, High-throughput quantum photonic devices emitting in- distinguish...

    2024

  8. [16]

    C. L. Phillips, A. J. Brash, M. Godsland, N. J. Martin, A. Foster, A. Tomlinson, R. Dost, N. Babazadeh, E. M. Sala, L. Wilson, J. Heffernan, M. S. Skolnick, and A. M. Fox, Purcell-enhanced single photons at telecom wave- lengths from a quantum dot in a photonic crystal cavity,...

    2024

  9. [17]

    W. B. Jeon, J. S. Moon, K.-Y. Kim, Y.-H. Ko, C. J. K. Richardson, E. Waks, and J.-H. Kim, Plug-and-play single-photon devices with efficient fiber-quantum dot interface, Advanced Quantum Technologies5, 2200022 (2022)

    2022

  10. [18]

    M. Paul, F. Olbrich, J. Höschele, S. Schreier, J. Ket- tler, S. L. Portalupi, M. Jetter, and P. Michler, Single- photon emission at 1.55µm from MOVPE-grown InAs quantum dots on InGaAs/GaAs metamorphic buffers, Applied Physics Letters111, 033102 (2017)

    2017

  11. [19]

    P. A. Wroński, P. Wyborski, A. Musiał, P. Podemski, G. Sęk, S. Höfling, and F. Jabeen, Metamorphic buffer layer platform for 1550 nm single-photon sources grown by MBE on (100) GaAs substrate, Materials14, 5221 (2021)

    2021

  12. [20]

    Scaparra, A

    B. Scaparra, A. Ajay, P. S. Avdienko, Y. Xue, H. Riedl, P. Kohl, B. Jonas, B. Costa, E. Sirotti, P. Schmiedeke, V. Villafañe, I. D. Sharp, E. Zallo, G. Koblmüller, J. J. Finley, and K. Müller, Structural properties of graded InxGa1−xAs metamorphic buffer layers for quantum dot...

    2023

  13. [21]

    Wyborski, M

    P. Wyborski, M. Gawełczyk, P. Podemski, P. A. Wroński, M. Pawlyta, S. Gorantla, F. Jabeen, S. Höfling, and G. Sęk, Impact of MBE-grown (In,Ga)As/GaAs meta- morphic buffers on excitonic and optical properties of sin- gle quantum dots with single-photon emission tuned to the tel...

    2023

  14. [22]

    Sacedón, F

    A. Sacedón, F. González-Sanz, E. Calleja, E. Muñoz, S. I. Molina, F. J. Pacheco, D. Araújo, R. García, M. Lourenço, Z. Yang, P. Kidd, and D. Dunstan, De- sign of InGaAs linear graded buffer structures, Applied Physics Letters66, 3334 (1995)

    1995

  15. [23]

    Sittig, C

    R. Sittig, C. Nawrath, S. Kolatschek, S. Bauer, R. Sch- aber, J. Huang, P. Vijayan, P. Pruy, S. L. Portalupi, M. Jetter, and P. Michler, Thin-film InGaAs metamor- phic buffer for telecom C-band InAs quantum dots and optical resonators on GaAs platform, Nanophotonics11, 1109 (2022)

    2022

  16. [24]

    E. S. Semenova, R. Hostein, G. Patriarche, O. Mau- guin, L. Largeau, I. Robert-Philip, A. Beveratos, and A. Lemaître, Metamorphic approach to single quantum dot emission at 1.55µm on GaAs substrate, Journal of Applied Physics103, 103533 (2008)

    2008

  17. [25]

    S. V. Sorokin, G. V. Klimko, I. V. Sedova, A. A. Sitnikova, D. A. Kirilenko, M. V. Baidakova, M. A. Yagovkina, T. A. Komissarova, K. G. Belyaev, and S. V. Ivanov, Peculiarities of strain relaxation in linearly graded InxGa1−xAs/GaAs(001) metamorphic buffer lay- ers grown by mo...

    2016

  18. [26]

    Scaparra, E

    B. Scaparra, E. Sirotti, A. Ajay, B. Jonas, B. Costa, H. Riedl, P. Avdienko, I. D. Sharp, G. Koblmüller, E. Za- llo, J. J. Finley, and K. Müller, Broad range tuning of inas quantum dot emission for nanophotonic devices in the telecommunication bands, ACS Applied Nano Mate- ria...

    2024

  19. [27]

    A. M. Andrews, J. S. Speck, A. E. Romanov, M. Bobeth, and W. Pompe, Modeling cross-hatch surface morphol- ogy in growing mismatched layers, Journal of Applied Physics91, 1933 (2002)

    2002

  20. [28]

    Barbiero, A

    A. Barbiero, A. Tuktamyshev, G. Pirard, J. Huwer, T. Müller, R. Stevenson, S. Bietti, S. Vichi, A. Fedorov, G. Bester, S. Sanguinetti, and A. Shields, Exciton fine structure in InAs quantum dots with cavity-enhanced emission at telecommunication wavelength and grown on a GaAs(...

    2022

  21. [29]

    D. A. Vajner, P. Holewa, E. Zięba-Ostój, M. Wasiluk, M. von Helversen, A. Sakanas, A. Huck, K. Yvind, N. Gregersen, A. Musiał, M. Syperek, E. Semenova, and T. Heindel, On-demand generation of indistinguishable photons in the telecom C-band using quantum dot de- vices, ACS Phot...

    2024

  22. [30]

    Sapienza, R

    L. Sapienza, R. N. E. Malein, C. E. Kuklewicz, P. E. Kremer, K. Srinivasan, A. Griffiths, E. Clarke, M. Gong, R. J. Warburton, and B. D. Gerardot, Exciton fine- structure splitting of telecom-wavelength single quantum dots: Statistics and external strain tuning, Physical Re- v...

    2013

  23. [31]

    Lettner, S

    T. Lettner, S. Gyger, K. D. Zeuner, L. Schweick- ert, S. Steinhauer, C. Reuterskiöld Hedlund, S. Stroj, A. Rastelli, M. Hammar, R. Trotta, K. D. Jöns, and V. Zwiller, Strain-controlled quantum dot fine structure for entangled photon generation at 1550 nm, Nano Let- ters21, 105...

    2021

  24. [32]

    K. D. Zeuner, K. D. Jöns, L. Schweickert, C. Reuter- skiöld Hedlund, C. Nuñez Lobato, T. Lettner, K. Wang, S. Gyger, E. Schöll, S. Steinhauer, M. Hammar, and V. Zwiller, On-demand generation of entangled photon pairs in the telecom C-band with InAs quantum dots, ACS Photonics8...

    2021

  25. [33]

    and in the range123.0µeVfor MOVPE-grown QDs iv 0 .810 .830 .940 .960.91.31.72.12.50 2 4 6 8 1 01 20.010 .11 0 2 4 6 8 1 01 20.010 .11 C OL ifetime (ns)X Energy (eV)E vents norm.T ime (ns)X XXX X Xa )b )c )O CT ime (ns) FIG. 3. a),b) Lifetime measurements of X and XX transition...

  26. [34]

    Skiba-Szymanska, R

    J. Skiba-Szymanska, R. M. Stevenson, C. Varnava, M. Felle, J. Huwer, T. Müller, A. J. Bennett, J. P. Lee, I. Farrer, A. B. Krysa, P. Spencer, L. E. Goff, D. A. Ritchie, J. Heffernan, and A. J. Shields, Universal growth scheme for quantum dots with low fine-structure split- tin...

    2017

  27. [35]

    Holewa, A

    P. Holewa, A. Sakanas, U. M. Gür, P. Mrow- iński, A. Huck, B.-Y. Wang, A. Musiał, K. Yvind, N. Gregersen, M. Syperek, and E. Semenova, Bright quantum dot single-photon emitters at telecom bands heterogeneously integrated on Si, ACS Photonics9, 2273 (2022)

    2022

  28. [36]

    Bacher, R

    G. Bacher, R. Weigand, J. Seufert, V. D. Kulakovskii, N. A. Gippius, A. Forchel, K. Leonardi, and D. Hom- mel, Biexciton versus exciton lifetime in a single semicon- ductor quantum dot, Physical Review Letters83, 4417 (1999)

    1999

  29. [37]

    Nawrath, F

    C. Nawrath, F. Olbrich, M. Paul, S. L. Portalupi, M. Jet- ter, and P. Michler, Coherence and indistinguishability of highly pure single photons from non-resonantly and res- onantly excited telecom C-band quantum dots, Applied Physics Letters115, 023103 (2019)

    2019

  30. [38]

    P. A. Dalgarno, J. McFarlane, D. Brunner, R. W. Lambert, B. D. Gerardot, R. J. Warburton, K. Kar- rai, A. Badolato, and P. M. Petroff, Hole recapture limited single photon generation from a single n-type charge-tunablequantumdot,AppliedPhysicsLetters92, 193103 (2008). viii

    2008

  31. [39]

    A. I. Veretennikov, M. V. Rakhlin, Y. M. Serov, A. I. Galimov, G. P. Veyshtort, S. V. Sorokin, G. V. Klimko, I. V. Sedova, N. A. Maleev, M. A. Bobrov, A. P. Vasiliev, A. G. Kuzmenkov, M. M. Kulagina, Y. M. Zadiranov, S. I. Troshkov, Y. A. Salii, D. S. Berezina, E. V. Nikitina,...

    2025

Pith tools

Reviewed August 7, 2026 · model on record in the stance chip above.