Monolayer Si2Te2 on HfTe2 shows a ~300 meV gap and step-edge states, reported as the first experimental realization of its predicted quantum spin Hall phase.
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Experimental Realization of the Topologically Nontrivial Phase in Monolayer Si$_2$Te$_2$
Monolayer Si2Te2 on HfTe2 shows a ~300 meV gap and step-edge states, reported as the first experimental realization of its predicted quantum spin Hall phase.