High-temperature droplet epitaxy on GaAs(111)A yields symmetric hexagonal quantum dots in a specific arsenic-flux window, and the morphology trend is captured by a one-parameter model.
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High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
High-temperature droplet epitaxy on GaAs(111)A yields symmetric hexagonal quantum dots in a specific arsenic-flux window, and the morphology trend is captured by a one-parameter model.