The Stark shift of the T center in silicon is computed from first principles, yielding a small linear dipole change of -0.79 D along X and about 0.09 D along Y, with a 25.6 meV exciton binding energy.
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First principles computations of the Stark shift of a defect-bound exciton: the case of the T center in silicon
The Stark shift of the T center in silicon is computed from first principles, yielding a small linear dipole change of -0.79 D along X and about 0.09 D along Y, with a 25.6 meV exciton binding energy.