AlN photodetectors engineered via deep-level defects at metal-Schottky junctions enable linear measurement of ultra-bright sub-bandgap light without saturation.
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An ultra-wide-bandgap semiconductor photodetector for linear measurement of bright sub-bandgap light
AlN photodetectors engineered via deep-level defects at metal-Schottky junctions enable linear measurement of ultra-bright sub-bandgap light without saturation.