A model is presented for hybrid pseudospin valve and superconducting-ferromagnetic transistor memory cells enabling sub-nanosecond switching with sub-100 fJ energy per operation.
Our model, describing the superconducting computer me mory circuits, also allows studying the effect of noises, punch - through effect, crosstalk, parasitic, etc
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Modeling the computer memory based on the ferromagnet/superconductor multilayers
A model is presented for hybrid pseudospin valve and superconducting-ferromagnetic transistor memory cells enabling sub-nanosecond switching with sub-100 fJ energy per operation.