Valley splitting in doubly-gated silicon-on-insulator quantum wells is controlled by the electrostatic bias δn = nB - nF, reaching 6.3 meV, independent of total carrier density.
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Wide Electrical Tunability of the Valley Splitting in a Doubly gated Silicon-on-Insulator Quantum Well
Valley splitting in doubly-gated silicon-on-insulator quantum wells is controlled by the electrostatic bias δn = nB - nF, reaching 6.3 meV, independent of total carrier density.