Weak positional disorder renormalizes tight-binding parameters in spherical quantum dot chains, broadening minibands by 8-12% for σ=0.1a while keeping states delocalized.
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Improved MOVPE growth reduces alloy intermixing in Al-rich AlGaN/AlGaN heterostructures, enabling 2DEG with ~2500 Ω/□ sheet resistivity assessed non-destructively by XRD.
MBE-grown InAs p-i-n diodes under optimized conditions (450 C growth, 3x As2 flux, elevated In cell temperature) reach breakdown voltages above 0.3 V and reverse saturation current densities 200 times the radiative limit.
citing papers explorer
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Effect of weak positional disorder on the miniband structure of spherical quantum dot chains
Weak positional disorder renormalizes tight-binding parameters in spherical quantum dot chains, broadening minibands by 8-12% for σ=0.1a while keeping states delocalized.
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Barrier-channel intermixing and 2-dimensional electron gas degradation in Al-rich Al(Ga)N/AlGaN high electron mobility transistor heterostructures
Improved MOVPE growth reduces alloy intermixing in Al-rich AlGaN/AlGaN heterostructures, enabling 2DEG with ~2500 Ω/□ sheet resistivity assessed non-destructively by XRD.
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Initial Development of MBE-Grown InAs Diodes for Thermoradiative Energy Harvesting
MBE-grown InAs p-i-n diodes under optimized conditions (450 C growth, 3x As2 flux, elevated In cell temperature) reach breakdown voltages above 0.3 V and reverse saturation current densities 200 times the radiative limit.
- Electron - acoustic phonons scattering in quantum wells in a tilted quantizing magnetic field