Thermoelectric effects allow reset operations in one current polarity to use 3x less energy and 2x lower current than the opposite polarity in 4nm bottom electrode PCM cells, with programming volume limited by filamentary conduction.
Stopping resistance drift in phase change memory cells and analysis of charge transport in stable amorphous Ge2Sb2Te5,
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Filamentary Transport and Thermoelectric Effects in Mushroom Phase Change Memory Cells
Thermoelectric effects allow reset operations in one current polarity to use 3x less energy and 2x lower current than the opposite polarity in 4nm bottom electrode PCM cells, with programming volume limited by filamentary conduction.