BSE calculations find pristine 2H-Ge exciton lifetimes above 10^-4 s that shorten by nearly two orders with Si alloying and reach nanoseconds under 2% uniaxial strain, yet remain too long to explain observed strong room-temperature PL.
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High-energy transitions in monolayer WSe2 show delayed dynamics relative to lower-energy excitons, attributed via transient absorption and first-principles calculations to phonon-mediated formation of momentum-dark excitons.
A new workflow uses GW-derived ionization potentials and electron affinities, quasiparticle renormalization for polarization, the integer charge transfer model for pinning, and electrostatic potential shifts to predict adsorbate energy alignment on oxide/metal substrates.
citing papers explorer
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Exciton radiative lifetimes in hexagonal diamond Ge and Si$_x$Ge$_{1-x}$ alloys
BSE calculations find pristine 2H-Ge exciton lifetimes above 10^-4 s that shorten by nearly two orders with Si alloying and reach nanoseconds under 2% uniaxial strain, yet remain too long to explain observed strong room-temperature PL.
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Nonequilibrium dynamics of high energy transitions in monolayer WSe$_{2}$
High-energy transitions in monolayer WSe2 show delayed dynamics relative to lower-energy excitons, attributed via transient absorption and first-principles calculations to phonon-mediated formation of momentum-dark excitons.
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An ab initio approach to energy alignment and charge-state prediction of adsorbates on ultrathin insulators
A new workflow uses GW-derived ionization potentials and electron affinities, quasiparticle renormalization for polarization, the integer charge transfer model for pinning, and electrostatic potential shifts to predict adsorbate energy alignment on oxide/metal substrates.