A new process using edge ion implantation and microwave annealing produces active-edge silicon sensors showing reduced edge leakage current in tests and simulations.
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Active Edge Silicon Sensors Fabricated With Edge Ion Implantation and Microwave Annealing for Dopant Activation
A new process using edge ion implantation and microwave annealing produces active-edge silicon sensors showing reduced edge leakage current in tests and simulations.