SrI2 post-annealing of sputtered SrZn2P2 thin films causes grain growth, reduces diffraction peak broadening, preserves phase purity, and boosts photoluminescence intensity and uniformity near the 1.8 eV direct bandgap.
(27) Klüfers, P.; Neumann, H.; Mewis, A.; Schuster, H.-U
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Thin film synthesis of SrZn2P2 with SrI2 post-annealing for enhanced crystallinity and optoelectronic quality
SrI2 post-annealing of sputtered SrZn2P2 thin films causes grain growth, reduces diffraction peak broadening, preserves phase purity, and boosts photoluminescence intensity and uniformity near the 1.8 eV direct bandgap.