Demonstrates reversible SiV- to SiV0 charge-state conversion in ultra-shallow diamond ensembles via sub-200 mV aqueous electrolytic gating after mapping termination-dependent populations.
Tetienne, Spin properties of dense near-surface en- sembles of nitrogen-vacancy centers in diamond, Physical Review B97, 10.1103/PhysRevB.97.085402 (2018)
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Solution gate control of shallow silicon vacancy charge states in diamond
Demonstrates reversible SiV- to SiV0 charge-state conversion in ultra-shallow diamond ensembles via sub-200 mV aqueous electrolytic gating after mapping termination-dependent populations.