Strain-induced axial gauge fields B5 produce angle-independent linear-in-B5 contributions to planar Hall conductivity in gapped nodal rings due to alignment with Berry curvature and orbital magnetic moment, with one component remaining completely strain-immune.
Let us express the current density as Jlf s =−e 4 τ 3 Z d3k (2π) 3 3X p=2 N 2,p ,(B10) whereN 2,p has a|B| p-dependence
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Interplay of strain-induced axial gauge fields and intrinsic band-topology in the magnetoelectric conductivity of gapped nodal rings
Strain-induced axial gauge fields B5 produce angle-independent linear-in-B5 contributions to planar Hall conductivity in gapped nodal rings due to alignment with Berry curvature and orbital magnetic moment, with one component remaining completely strain-immune.