A modified boost converter applies accelerated stress to GaN HEMTs, showing logarithmic R_DS(on) rise consistent with existing models and validating phonon scattering energy at 70V and 100V.
Safe and consistent method of spot-welding plat- inum thermocouple wires and foils for high temperature measurements
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
eess.SY 1years
2025 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
A Modified Boost Converter Topology for Dynamic Characterization of Hot Carrier and Trap Generation in GaN HEMTs
A modified boost converter applies accelerated stress to GaN HEMTs, showing logarithmic R_DS(on) rise consistent with existing models and validating phonon scattering energy at 70V and 100V.