Sequentially etching Al2O3 and SiO2 from aluminum resonators with phosphoric acid and HF vapor reduces low-power microwave loss to about 5.7×10−7 (Q≈1.7M) after a 24-hour ambient delay.
Optimization of al/alox/al-layer systems for josephson junctions from a microstructure point of view,
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Surface Optimization of Superconducting Aluminum Resonators for Robust Quantum Device Fabrication
Sequentially etching Al2O3 and SiO2 from aluminum resonators with phosphoric acid and HF vapor reduces low-power microwave loss to about 5.7×10−7 (Q≈1.7M) after a 24-hour ambient delay.