Gain suppression in FBK LGADs depends on detector thickness, proton energy, bias voltage, and angle, and is stronger for FBK than for previously measured HPK sensors.
Synchrotron light source X-ray detection with Low-Gain Avalanche Diodes
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
abstract
The response of Low Gain Avalanche Diodes (LGADs), which are a type of thin silicon detector with internal gain, to X-rays of energies between 6-70 keV was characterized at the SLAC light source (SSRL). The utilized beamline at SSRL was 11-2, with a nominal beam size of 3 cm x 0.5 cm, a repetition rate of 500 MHz, and very monochromatic. LGADs of different thicknesses and gain layer configurations were read out using fast amplification boards and digitized with a fast oscilloscope. Standard PiN devices were characterized as well. The devices' energy resolution and time resolution as a function of X-ray energy were measured. The charge collection and multiplication mechanism were simulated using TCAD Sentaurus, and the results were compared with the collected data.
citation-role summary
background 1
citation-polarity summary
fields
physics.ins-det 1years
2025 1verdicts
CONDITIONAL 1roles
background 1polarities
unclear 1representative citing papers
citing papers explorer
-
Measured gain suppression in FBK LGADs with different active thicknesses
Gain suppression in FBK LGADs depends on detector thickness, proton energy, bias voltage, and angle, and is stronger for FBK than for previously measured HPK sensors.