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Synchrotron light source X-ray detection with Low-Gain Avalanche Diodes

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arxiv 2306.15798 v4 pith:AHQYTIXA submitted 2023-06-27 physics.ins-det hep-ex

classification physics.ins-dethep-ex
keywords weregainavalanchecharacterizeddevicesdiodesenergyfast
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The response of Low Gain Avalanche Diodes (LGADs), which are a type of thin silicon detector with internal gain, to X-rays of energies between 6-70 keV was characterized at the SLAC light source (SSRL). The utilized beamline at SSRL was 11-2, with a nominal beam size of 3 cm x 0.5 cm, a repetition rate of 500 MHz, and very monochromatic. LGADs of different thicknesses and gain layer configurations were read out using fast amplification boards and digitized with a fast oscilloscope. Standard PiN devices were characterized as well. The devices' energy resolution and time resolution as a function of X-ray energy were measured. The charge collection and multiplication mechanism were simulated using TCAD Sentaurus, and the results were compared with the collected data.

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  1. Measured gain suppression in FBK LGADs with different active thicknesses

    physics.ins-det 2025-02 conditional novelty 5.0 of 10

    Gain suppression in FBK LGADs depends on detector thickness, proton energy, bias voltage, and angle, and is stronger for FBK than for previously measured HPK sensors.

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