Binarized neural networks maintain near-full accuracy with 0.1% random weight bit errors, allowing ST-MRAM to operate without error correction and with about 2x lower programming energy.
Logic process compatible 40-nm 16-mb, embedded perpendicular-mram with hybrid-resistance reference, sub- µa sensing resolution, and 17.5-ns read access time,
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Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction
Binarized neural networks maintain near-full accuracy with 0.1% random weight bit errors, allowing ST-MRAM to operate without error correction and with about 2x lower programming energy.