In 4H-Ge the lowest-energy optical transition is parity-forbidden, producing a radiative lifetime seven orders of magnitude longer than in 2H- or 6H-Ge; single-Si substitution lifts the selection rule and shortens the lifetime by up to two orders of magnitude.
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BSE calculations find pristine 2H-Ge exciton lifetimes above 10^-4 s that shorten by nearly two orders with Si alloying and reach nanoseconds under 2% uniaxial strain, yet remain too long to explain observed strong room-temperature PL.
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Optical selection rules in hexagonal Ge polytypes and their lifting by symmetry perturbation
In 4H-Ge the lowest-energy optical transition is parity-forbidden, producing a radiative lifetime seven orders of magnitude longer than in 2H- or 6H-Ge; single-Si substitution lifts the selection rule and shortens the lifetime by up to two orders of magnitude.
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Exciton radiative lifetimes in hexagonal diamond Ge and Si$_x$Ge$_{1-x}$ alloys
BSE calculations find pristine 2H-Ge exciton lifetimes above 10^-4 s that shorten by nearly two orders with Si alloying and reach nanoseconds under 2% uniaxial strain, yet remain too long to explain observed strong room-temperature PL.