Shear-induced LDA to HDA phase transformations in amorphous silicon occur simultaneously until steady state, described by a shear-strain-governed analytical model that reduces required pressures by 4.36-5.10 GPa, with distinct behaviors inside shear bands.
Pressure-induced reversible amorphization and an amorphous- amorphous transition in ge2sb2te5 phase-change memory material
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Unveiling the Atomistic Mechanisms of Shear-Induced LDA$\leftrightarrow$HDA Transformations and Shear Banding in Amorphous Silicon under High Pressures
Shear-induced LDA to HDA phase transformations in amorphous silicon occur simultaneously until steady state, described by a shear-strain-governed analytical model that reduces required pressures by 4.36-5.10 GPa, with distinct behaviors inside shear bands.