D-wave altermagnets on Bi2Se3 surfaces induce a layer Hall effect with zero net Hall conductance for antiparallel Néel vectors and a quantized Chern state for parallel vectors.
[26, 75, 108–113]; the tight-binding model Hamiltonian ford-wave alter- magnets, which includes Refs
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A minimal 2D d-wave altermagnetic model with band inversion realizes a ferroelectrically tunable Chern insulator with spontaneous spin canting, enabling C = ±1 and ±2 phases via Berry-curvature reorganization.
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Layer Hall effect induced by altermagnetism
D-wave altermagnets on Bi2Se3 surfaces induce a layer Hall effect with zero net Hall conductance for antiparallel Néel vectors and a quantized Chern state for parallel vectors.