KPFM shows work function rising with layer number in MoS2 bilayers, with larger differences in AB stacking due to stronger interlayer coupling, plus n-type photogating from substrate effects and surface traps.
High mobility ambipolar mos2 field-effect transistors: Substrate and dielectric effects.Applied Physics Letters, 102(4):042104
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Nanoscale mapping of stacking-dependent work function and local photoresponse in CVD-grown MoS2 bilayers by KPFM
KPFM shows work function rising with layer number in MoS2 bilayers, with larger differences in AB stacking due to stronger interlayer coupling, plus n-type photogating from substrate effects and surface traps.