A measured effective-bit noise model is used to simulate accuracy loss on four workloads; per-module or per-ADC reference tuning helps some tasks, but the drone result contradicts the claimed general effectiveness.
Low power and high speed bipolar switching with a thin reactive ti buffer layer in robust hfo2 based rram,
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Characterization and Mitigation of ADC Noise by Reference Tuning in RRAM-Based Compute-In-Memory
A measured effective-bit noise model is used to simulate accuracy loss on four workloads; per-module or per-ADC reference tuning helps some tasks, but the drone result contradicts the claimed general effectiveness.