A fabricated 2T2R hafnium-oxide resistive memory array with sense-amplifier XNOR support is characterized, and simulated binarized networks on it tolerate bit error rates up to 10^-3 with low projected inference energy.
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Digital Biologically Plausible Implementation of Binarized Neural Networks with Differential Hafnium Oxide Resistive Memory Arrays
A fabricated 2T2R hafnium-oxide resistive memory array with sense-amplifier XNOR support is characterized, and simulated binarized networks on it tolerate bit error rates up to 10^-3 with low projected inference energy.