Quantification of vdW gap trade-offs in 2D transistors reveals scaling limits for insulators and contacts, with zipper-like interfaces proposed to remove the gap.
Luo,et al., Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation.Nat
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Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials
Quantification of vdW gap trade-offs in 2D transistors reveals scaling limits for insulators and contacts, with zipper-like interfaces proposed to remove the gap.