Bias-dependent oscillations in photoluminescence, photocurrent with periodic negative differential resistance, and photo-capacitance in a 0D-2D heterostructure indicate recurring charge accumulation and competition between coherent and incoherent electron tunneling over macroscopic scales.
The figure (a) shows the I -V analysis of both the bigger and smaller sample of 0D-2D heterostructure indicating the expected leaky behaviour of the sample with bigger area
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Voltage-Regulated Photoluminescence Modulation in a 0D-2D Mixed Dimensional Heterostructure
Bias-dependent oscillations in photoluminescence, photocurrent with periodic negative differential resistance, and photo-capacitance in a 0D-2D heterostructure indicate recurring charge accumulation and competition between coherent and incoherent electron tunneling over macroscopic scales.