Pressure up to 15.6 GPa collapses the bandgap in 2H-MoTe2 into a semimetallic state, replacing variable-range hopping with weak localization and antilocalization while a phenomenological model unifies the magnetoresistance across regimes.
Yang, Kedong Wang & Liyuan Zhang, Bandgap opening in MoTe2 thin flakes induced by surface oxidation, Front
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Pressure-Tuned Competing Electronic States in Layered Tellurides
Pressure up to 15.6 GPa collapses the bandgap in 2H-MoTe2 into a semimetallic state, replacing variable-range hopping with weak localization and antilocalization while a phenomenological model unifies the magnetoresistance across regimes.