Pressure-Tuned Competing Electronic States in Layered Tellurides
Pith reviewed 2026-05-08 14:14 UTC · model grok-4.3
The pith
Hydrostatic pressure suppresses insulation in 2H-MoTe2 and drives a crossover from variable-range hopping to quantum interference transport.
A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.
Core claim
The central claim is that hydrostatic pressure continuously collapses the bandgap of bulk 2H-MoTe2, rapidly eliminating the variable-range hopping regime and revealing a metallic-like state governed by quantum interference. In this state a crossover from weak antilocalization to weak localization occurs at low temperature, while a physically motivated phenomenological description reproduces the observed magnetoresistance and yields an electronic length scale that stays roughly constant from the hopping regime through the coherent regime. Density-functional calculations confirm the gap closure and the resulting semimetallic electronic structure.
What carries the argument
The pressure-driven continuous bandgap collapse that switches conduction from activated and variable-range hopping to a quantum-interference regime, together with the phenomenological model that fits the magnetoresistance and extracts a consistent electronic length scale across both regimes.
If this is right
- The insulating state disappears above a modest pressure threshold, allowing quantum-coherent transport to dominate.
- Large nonsaturating magnetoresistance at ambient pressure gives way to weak antilocalization and weak localization under compression.
- The extracted electronic length scale remains comparable, indicating that the underlying disorder or scattering mechanism persists across the regimes.
- First-principles results link the transport change directly to the closing of the bandgap into a semimetallic structure.
Where Pith is reading between the lines
- The same pressure-tuning approach could be applied to other layered tellurides or transition-metal dichalcogenides to access analogous hopping-to-coherent crossovers.
- The persistence of a single length scale suggests that disorder effects remain relevant even after the gap closes, which could be tested by combining pressure with controlled disorder.
- Device applications that exploit pressure as a knob to switch between high-resistance hopping and low-resistance coherent states become conceivable in similar layered materials.
Load-bearing premise
The phenomenological model captures the magnetoresistance data across pressure regimes without needing regime-specific adjustments, and the density-functional calculations accurately predict the continuous collapse of the bandgap under pressure.
What would settle it
A measurement showing that the magnetoresistance in the high-pressure regime cannot be described by the same functional form or length-scale parameters used at ambient pressure, or an observation of an abrupt jump in resistivity rather than continuous suppression, would falsify the unified picture.
Figures
read the original abstract
Layered transition-metal dichalcogenides (TMDs) host competing electronic states that can be tuned by external perturbations, providing a platform to explore the interplay between disorder, electronic structure, and quantum transport. Here we investigate magnetotransport in bulk semiconducting 2H-MoTe2 under hydrostatic pressure. At ambient pressure, transport evolves from high-temperature metallic behavior into activated conduction and ultimately a strongly localized variable-range hopping regime, accompanied by a pronounced magnetotransport anomaly near 45 K and large, nonsaturating magnetoresistance extending up to an unprecedented field of 60 T in semiconducting 2H-MoTe2. Under compression to 15.6 GPa, the insulating state is rapidly suppressed and a low-resistivity regime emerges in which quantum interference dominates, exhibiting a crossover from weak antilocalization (WAL) to weak localization (WL) at low temperatures. A physically motivated phenomenological description captures the magnetoresistance across these regimes and yields a characteristic electronic length scale that remains comparable across the localized and quantum-interference regimes. First-principles calculations reveal a continuous pressure-driven collapse of the bandgap into a semimetallic electronic structure. These results establish a unified picture of pressure-tuned transport spanning hopping and quantum-coherent regimes.
Editorial analysis
A structured set of objections, weighed in public.
Referee Report
Summary. The manuscript reports magnetotransport measurements on bulk semiconducting 2H-MoTe2 under hydrostatic pressure. At ambient pressure the system evolves from high-temperature metallic behavior to activated conduction and variable-range hopping, accompanied by large nonsaturating magnetoresistance up to 60 T. Under compression to 15.6 GPa the insulating state is suppressed and a low-resistivity regime emerges in which quantum interference dominates, with a crossover from weak antilocalization to weak localization. A physically motivated phenomenological model is shown to capture the magnetoresistance across both the hopping and quantum-coherent regimes, yielding a characteristic electronic length scale that remains comparable. Complementary DFT calculations indicate a continuous pressure-driven collapse of the bandgap into a semimetallic structure. The authors conclude that these results establish a unified picture of pressure-tuned transport spanning hopping and quantum-coherent regimes.
Significance. If the phenomenological model is shown to be applied with fixed functional form and without regime-specific adjustments, and if the extracted length scale is robustly comparable, the work would be significant for demonstrating continuous tuning between strongly localized and quantum-coherent transport in a single layered telluride. The combination of high-field (60 T) data at ambient pressure with high-pressure quantum-interference measurements is experimentally valuable, and the DFT results provide a consistent electronic-structure anchor for the observed suppression of insulation.
major comments (2)
- [Results section describing the phenomenological MR model] The unification claim rests on the phenomenological magnetoresistance model yielding a comparable characteristic electronic length scale across the VRH regime (ambient pressure) and the WAL/WL regimes (high pressure). The manuscript must explicitly state the model equation, demonstrate that the same functional form and parameter constraints are used in all regimes, and show that no additional free parameters are introduced post-hoc for individual datasets; otherwise the reported comparability may be an artifact of fitting choices rather than evidence of a unified physical picture.
- [Data analysis and fitting subsection] No uncertainty estimates, error bars, or goodness-of-fit metrics are provided for the extracted characteristic length scale. Without these, it is impossible to assess whether the lengths reported as 'comparable' across regimes are statistically consistent or whether differences fall within fitting uncertainties.
minor comments (2)
- [Abstract] The abstract states 'unprecedented field of 60 T in semiconducting 2H-MoTe2'; this should be qualified to clarify the precise sense in which the field range is unprecedented.
- [DFT calculations] The DFT section would benefit from a supplementary figure showing the pressure evolution of the calculated band structure or density of states to visually support the continuous bandgap collapse.
Simulated Author's Rebuttal
We thank the referee for their careful reading of our manuscript and for the constructive comments. We appreciate the positive assessment of the experimental approach combining high-field ambient-pressure data with high-pressure quantum-interference measurements. We address the two major comments below and have revised the manuscript to strengthen the presentation of the phenomenological model and the fitting analysis.
read point-by-point responses
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Referee: [Results section describing the phenomenological MR model] The unification claim rests on the phenomenological magnetoresistance model yielding a comparable characteristic electronic length scale across the VRH regime (ambient pressure) and the WAL/WL regimes (high pressure). The manuscript must explicitly state the model equation, demonstrate that the same functional form and parameter constraints are used in all regimes, and show that no additional free parameters are introduced post-hoc for individual datasets; otherwise the reported comparability may be an artifact of fitting choices rather than evidence of a unified physical picture.
Authors: We agree that the unification claim requires explicit documentation of the model to avoid any ambiguity. In the revised manuscript we will insert the full functional form of the phenomenological magnetoresistance expression in the Results section. We will demonstrate that this identical functional form, together with the same set of parameter constraints, is applied uniformly to the ambient-pressure VRH data and to the high-pressure WAL/WL data. The fitting protocol will be described in sufficient detail to confirm that no regime-specific adjustments or additional free parameters were introduced after the initial model selection. With these clarifications the reported comparability of the characteristic length scale will rest on a single, consistently applied description rather than on post-hoc fitting choices. revision: yes
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Referee: [Data analysis and fitting subsection] No uncertainty estimates, error bars, or goodness-of-fit metrics are provided for the extracted characteristic length scale. Without these, it is impossible to assess whether the lengths reported as 'comparable' across regimes are statistically consistent or whether differences fall within fitting uncertainties.
Authors: We acknowledge the omission of quantitative uncertainty information in the current version. In the revised manuscript we will report error bars on all extracted characteristic length scales, obtained from the covariance matrix of the nonlinear least-squares fits. We will also include goodness-of-fit metrics (reduced chi-squared and R-squared) for each dataset. These additions will allow readers to evaluate directly whether the length scales remain statistically consistent across the VRH and WAL/WL regimes within the reported uncertainties. revision: yes
Circularity Check
Phenomenological MR model unifies regimes only if length-scale extraction is independent of fitting choices
specific steps
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fitted input called prediction
[Abstract]
"A physically motivated phenomenological description captures the magnetoresistance across these regimes and yields a characteristic electronic length scale that remains comparable across the localized and quantum-interference regimes."
The length scale is a fitted parameter extracted from the same magnetoresistance datasets in each regime. Stating that it 'remains comparable' is therefore an output of the fitting procedure applied to the input curves rather than a prediction or derivation independent of those fits.
full rationale
The paper's unification claim rests on a single phenomenological model applied to magnetoresistance data from ambient pressure (VRH) through high-pressure (WAL/WL) regimes. The characteristic electronic length scale is obtained directly from fits to that data and reported as remaining comparable. This introduces moderate dependence on model form and parameter choices, but the raw resistivity curves, temperature dependence, and separate DFT bandgap calculations supply independent anchors. No self-citation chain or self-definitional loop is present; the central result retains external content from experiment and computation.
Axiom & Free-Parameter Ledger
free parameters (1)
- characteristic electronic length scale
axioms (1)
- domain assumption First-principles calculations correctly capture pressure-induced bandgap closure.
Reference graph
Works this paper leans on
-
[1]
Roy, A., Movva, H. C. P., Satpati, B., Kim, K., Dey, R., Rai, A., Pramanik, T., Guchhait, S., Tutuc, E. & Banerjee, S. K. Structural and electrical properties of MoTe₂ and MoSe₂ grown by molecular beam epitaxy. ACS Appl. Mater. Interfaces 8, 7396 –7402 (201 6). https://doi.org/10.1021/acsami.6b00961
-
[2]
Dong Hoon Keum, Suyeon Cho, Jung Ho Kim, Duk -Hyun Choe, Ha -Jun Sung, Min Kan, Haeyong Kang, Jae-Yeol Hwang, Sung Wng Kim, Heejun Yang, K. J. Chang & Young Hee Lee. Bandgap opening in few -layered monoclinic MoTe 2. Nature Phys 11, 482 –486 (2015). https://doi.org/10.1038/nphys3314
-
[3]
Lv, Y .-Y ., Cao, L., Li, X., Zhang, B.-B., Wang, K., Pang, B., Ma, L., Lin, D., Yao, S.-H., Zhou, J., Chen, Y . B., Dong, S. -T., Liu, W., Lu, M. -H., Chen, Y ., & Chen, Y . -F. Composition - and temperature-dependent phase transition in miscible Mo₁₋ₓWₓTe₂ single crystals. Sci. Rep. 7, 44587 (2017). https://doi.org/10.1038/srep44587
-
[4]
Duerloo, KA., Li, Y . & Reed, E. Structural phase transitions in two -dimensional Mo- and W- dichalcogenide monolayers. Nat. Commun., 5, 4214, (2014). https://doi.org/10.1038/ncomms5214 14
-
[5]
Sankar, R., Rao, G. N., Muthuselvam, I. P., Butler, C., Kumar, N., Murugan, G. S., Shekhar, C., Chang, T.-R., Wen, C.-Y ., Chen, C.-W., Lee, W.-L., Lin, M.-T., Jeng, H.-T., Felser, C. & Chou, F. C. Polymorphic layered MoTe₂ from semiconductor, topological i nsulator, to Weyl semimetal. Chem. Mater. 29, 699–707 (2017). https://doi.org/10.1021/acs.chemmater.6b04363
-
[6]
Zandt, T., Dwelk, H., Janowitz, C. & Manzke, R. Quadratic temperature dependence up to 50 K of the resistivity of metallic MoTe₂. J. Alloys Compd. 442, 216 –218 (2007). https://doi.org/10.1016/j.jallcom.2006.09.157
-
[7]
Yang, L., Wu, H., Zhang, W., Chen, Z., Li, J., Lou, X., Xie, Z., Zhu, R. & Chang, H. Anomalous oxidation and its effect on electrical transport originating from surface chemical instability in large-area, few -layer 1T′ -MoTe₂ films. Nanoscale 10, 19906 –19915 (2018). https://doi.org/10.1039/C8NR06119H
-
[8]
Zhang, Y ., Li, X., Li, Y ., Wu, D., Miao, X., Li, L., Min, T. & Pan, Y . Transport property evolution in 2H-MoTe₂₋ₓ mediated by Te-deficiency-induced mirror twin boundary networks. Small Struct. 5, 2400027 (2024). https://doi.org/10.1002/sstr.202400027
-
[9]
Dhavala Suri and R. S. Patel, Electron and thermal transport via variable range hopping in MoSe2 single crystals, Appl. Phys. Lett. 110, 233108 (2017). https://doi.org/10.1063/1.4984953
-
[10]
Dau, M. T., Vergnaud, C., Marty, A., Rortais, F., Beigné, C., Boukari, H., Bellet -Amalric, E., Guigoz, V ., Renault, O., Alvarez, C., Okuno, H., Pochet, P. & Jamet, M. Millimeter-scale layered MoSe₂ grown on sapphire and evidence for negative magnetoresista nce. Appl. Phys. Lett. 110, 011909 (2017). https://doi.org/10.1063/1.4973519
-
[11]
Wang, Q., Yu, P., Huang, X., Fan, J., Jing, X., Ji, Z., Liu, Z., Liu, G., Yang, C. & Lu, L. Observation of weak antilocalization and electron–electron interaction in few-layer 1T-MoTe₂ thin films. Chin. Phys. Lett. 35, 077303 (2018). https://doi.org/10.1088/0256-307X/35/7/077303
-
[12]
Naylor, C. H., Parkin, W. M., Ping, J., Gao, Z., Zhou, Y . R., Kim, Y ., Streller, F., Carpick, R. W., Rappe, A. M., Drndić, M., Kikkawa, J. M. & Johnson, A. T. C. Monolayer single -crystal 1T′- MoTe₂ grown by chemical vapor deposition exhibits weak antilocalization effect. Nano Lett. 16, 4297–4304 (2016). https://doi.org/10.1021/acs.nanolett.6b01342
-
[13]
Yuan Gan, Jiyuan Liang, Chang -woo Cho, Si Li, Yanping Guo, Xiaoming Ma, Xuefeng Wu, Jinsheng Wen, Xu Du, Mingquan He, Chang Liu, Shengyuan A. Yang, Kedong Wang & Liyuan Zhang, Bandgap opening in MoTe2 thin flakes induced by surface oxidation, Front. Phys. 15(3), 33602 (2020). https://doi.org/10.1007/s11467-020-0952-x
-
[14]
Y . Zhang, H. Ning, Y . Li, Y . Liu, and J. Wang, Negative to positive crossover of the magnetoresistance in layered WS2, Appl. Phys. Lett. 108, 153114 (2016). https://doi.org/10.1063/1.4946859
-
[15]
Song, P., Hsu, C., Zhao, M., Zhao, X., Chang, T.-R., Teng, J., Lin, H. & Loh, K. P. Few-layer 1T′- MoTe₂ as a gapless semimetal with thickness -dependent carrier transport. 2D Mater. 5, 031010 (2018). https://doi.org/10.1088/2053-1583/aac78d
-
[16]
-H., Kang, K., Won, D., Kwon, M., Cho, S., Son, Y
Kim, D., Lee, J. -H., Kang, K., Won, D., Kwon, M., Cho, S., Son, Y . -W. & Yang, H. Thermomechanical manipulation of electric transport in MoTe₂. Adv. Electron. Mater. 7, 2000823 (2021). https://doi.org/10.1002/aelm.202000823
-
[17]
Zhu, T., Das, S. S., Sadeghi, S. N., Tonni, F. F., Krylyuk, S., Constantin, C., Esfarjani, K., Davydov, A. V . & Zebarjadi, M. Electrostatic modulation of thermoelectric transport properties of 2H -MoTe₂. Energy Adv. 2, 10.1039/D3YA00316G (2023). https://doi.org/10.1039/D3YA00316G 15
-
[18]
Zhang, C., KC, S., Nie, Y ., Liang, C., Vandenberghe, W. G., Longo, R. C., Zheng, Y ., Kong, F., Hong, S., Wallace, R. M. et al. Charge -mediated reversible metal –insulator transition in monolayer MoTe₂ and WₓMo₁₋ₓTe₂ alloy. ACS Nano 10, 7370 –7375 (2016). https://doi.org/10.1021/acsnano.6b00148
-
[19]
Chen, F. C., Lv, H. Y ., Luo, X., Lu, W. J., Pei, Q. L., Lin, G. T., Han, Y . Y ., Zhu, X. B., Song, W. H. & Sun, Y . P. Extremely large magnetoresistance in the type-II Weyl semimetal MoTe₂. Phys. Rev. B 94, 235154 (2016). https://doi.org/10.1103/PhysRevB.94.235154
-
[20]
Zhou, Q., Rhodes, D., Zhang, Q. R., Tang, S., Schönemann, R. & Balicas, L. Hall effect within the colossal magnetoresistive semimetallic state of MoTe₂. Phys. Rev. B 94, 121101(R) (2016). https://doi.org/10.1103/PhysRevB.94.121101
-
[21]
N.et al.Large, non-saturating magnetoresistance in WTe 2.Nature514, 205–208 (2014)
Ali, M. N., Xiong, J., Flynn, S., Tao, J., Gibson, Q. D., Schoop, L. M., Liang, T., Haldolaarachchige, N., Hirschberger, M., Ong, N. P. & Cava, R. J. Large, non -saturating magnetoresistance in WTe₂. Nature 514, 205–208 (2014). https://doi.org/10.1038/nature13763
-
[22]
Jiang, J., Tang, F., Pan, X. C., Liu, H. M., Niu, X. H., Wang, Y . X., Xu, D. F., Yang, H. F., Xie, B. P., Song, F. Q., Dudin, P., Kim, T. K., Hoesch, M., Das, P. K., V obornik, I., Wan, X. G. & Feng, D. L. Signature of strong spin –orbital coupling in the la rge nonsaturating magnetoresistance material WTe₂. Phys. Rev. Lett. 115, 166601 (2015). https://d...
-
[23]
Kuiri, M., Das, S., Muthu, D. V . S., Das, A. & Sood, A. K. Thickness-dependent transition from the 1T′ to Weyl semimetal phase in ultrathin MoTe₂: electrical transport, noise and Raman studies. Nanoscale 12, 8371–8378 (2020). https://doi.org/10.1039/C9NR10383J
-
[24]
Pan, X.-C., Chen, X., Liu, H., Feng, Y ., Wei, Z., Zhou, Y ., Chi, Z., Pi, L., Yen, F., Song, F., Wan, X., Yang, Z., Wang, B., Wang, G. & Zhang, Y . Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride. Nat . Commun. 6, 7805 (2015). https://doi.org/10.1038/ncomms8805
-
[25]
Qi, Y ., Naumov, P. G., Ali, M. N. et al. Superconductivity in Weyl semimetal candidate MoTe₂. Nat. Commun. 7, 11038 (2016). https://doi.org/10.1038/ncomms11038
-
[26]
A., Shermadini, Z., Luetkens, H., Shengelaya, A., Baines, C., Morenzoni, E., Amato, A., Hone, J
Guguchia, Z., Kerelsky, A., Edelberg, D., Banerjee, S., von Rohr, F., Scullion, D., Augustin, M., Scully, M., Rhodes, D. A., Shermadini, Z., Luetkens, H., Shengelaya, A., Baines, C., Morenzoni, E., Amato, A., Hone, J. C., Khasanov, R., Billinge, S. J. L., Santos, E., Pasupathy, A. N. & Uemura, Y . J. Magnetism in semiconducting molybdenum dichalcogenides....
-
[27]
Yang, L., Wu, H., Zhang, L., Zhang, G., Li, H., Jin, W., Zhang, W. & Chang, H. Tunable and robust near-room-temperature intrinsic ferromagnetism in a van der Waals layered Cr-doped 2H- MoTe₂ semiconductor with out -of-plane anisotropy. ACS Appl. Mater. Inter faces 13, 31880 – 31890 (2021). https://doi.org/10.1021/acsami.1c07680
-
[28]
Chareev, D. A., Khan, M. E. H., Karmakar, D., Nekrasov, A. N., Nickolsky, M. S., Eriksson, O., Delin, A., Vasiliev, A. N. & Abdel-Hafiez, M. Stable sulfuric vapor transport and liquid sulfur growth on transition metal dichalcogenides. Cryst. Growth Des. 23 , 2287 –2294 (2023). https://doi.org/10.1021/acs.cgd.2c01318
-
[29]
Abdel-Hafiez, M., Mito, M., Shibayama, K., Takagi, S., Ishizuka, M., Vasiliev, A. N., Krellner, C. & Mao, H. K. High -pressure phase diagram of NdFeAsO₀.₉F₀.₁: disappearance of superconductivity on the verge of ferromagnetism from Nd moments. Phys. Rev. B 9 8, 094504 (2018). https://doi.org/10.1103/PhysRevB.98.094504 16
-
[30]
Dawson, W. G. & Bullett, D. W. Electronic structure and crystallography of MoTe₂ and WTe₂. J. Phys. C: Solid State Phys. 20, 6159–6174 (1987). https://doi.org/10.1088/0022-3719/20/36/017
-
[31]
A., Thiyagarajan, R., Karis, O., Vasiliev, A
Kvashnin, Y ., VanGennep, D., Mito, M., Medvedev, S. A., Thiyagarajan, R., Karis, O., Vasiliev, A. N., Eriksson, O. & Abdel -Hafiez, M. Coexistence of superconductivity and charge density waves in tantalum disulfide: experiment and theory. Phys. Rev. Lett. 1 25, 186401 (2020). https://doi.org/10.1103/PhysRevLett.125.186401
-
[32]
Abdel-Hafiez, M., Sundaramoorthy, M., Jasim, N. M., Irshad, K. A., Kuo, C. N., Lue, C. S., Carstens, F. L., Bertrand, A., Mito, M., Klingeler, R., Borisov, V ., Delin, A., Joseph, B., Eriksson, O., Arumugam, S. & Lingannan, G. Anomalous pressure dependence of the charge density wave and Fermi surface reconstruction in BaFe₂Al₉. Phys. Rev. Lett. 135, 23650...
-
[33]
Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio total -energy calculations using a plane -wave basis set. Phys. Rev. B 54, 11169 –11186 (1996). https://doi.org/10.1103/PhysRevB.54.11169
-
[34]
Blöchl, P. E. Projector augmented -wave method. Phys. Rev. B 50, 17953 –17979 (1994). https://doi.org/10.1103/PhysRevB.50.17953
-
[35]
Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865–3868 (1996). https://doi.org/10.1103/PhysRevLett.77.3865
-
[36]
Grimme, S., Antony, J., Ehrlich, S. & Krieg, H. A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT -D) for the 94 elements H –Pu. J. Chem. Phys. 132, 154104 (2010). https://doi.org/10.1063/1.3382344
-
[37]
Monkhorst, H. J. & Pack, J. D. Special points for Brillouin -zone integrations. Phys. Rev. B 13, 5188–5192 (1976). https://doi.org/10.1103/PhysRevB.13.5188
-
[38]
El-Mahalawy, S. H. & Evans, B. L. Temperature dependence of the electrical conductivity and Hall coefficient in 2H-MoS₂, MoSe₂, WSe₂ and MoTe₂. Phys. Status Solidi B 79, 713–720 (1977). https://doi.org/10.1002/PSSB.2220790238
-
[39]
Lee, P. A. & Ramakrishnan, T. V . Disordered electronic systems. Rev. Mod. Phys. 57, 287–337 (1985). https://doi.org/10.1103/RevModPhys.57.287
-
[40]
Mott, N. F. Conduction in non -crystalline materials. Philos. Mag. 19, 835 –852 (1969). https://doi.org/10.1080/14786436908216338
-
[41]
Shklovskii, B. I. & Efros, A. L. Electronic properties of doped semiconductors (Springer, Berlin, 1984)
1984
-
[42]
& Frydman, A
Pollak, M., Ortuño, M. & Frydman, A. The electron glass (Cambridge University Press, Cambridge, 2013)
2013
-
[43]
Ambegaokar, V ., Halperin, B. I. & Langer, J. S. Hopping conductivity in disordered systems. Phys. Rev. Lett. 27, 556–559 (1971). https://doi.org/10.1103/PhysRevLett.27.556
-
[44]
Efros, A. L. & Shklovskii, B. I. Coulomb gap and low -temperature conductivity of disordered systems. J. Phys. C: Solid State Phys. 8, L49 –L51 (1975). https://doi.org/10.1088/0022- 3719/8/4/003
-
[45]
Petkov, V . & Ren, Y . Local structure memory effects in the polar and nonpolar phases of MoTe₂. Phys. Rev. B 103, 094101 (2021). https://doi.org/10.1103/PhysRevB.103.094101 17
-
[46]
Watson, M. D., Date, M., Louat, A. & Schröter, N. B. M. Novel electronic structures from anomalous stackings in NbS₂ and MoS₂. Phys. Rev. B 110, L121121 (2024). https://doi.org/10.1103/PhysRevB.110.L121121
-
[47]
El-Khatib, S., Mustafa, F., Egilmez, M., Das, B., Tao, Y ., Maiti, M., Lee, Y . & Leighton, C. Exotic surface magnetotransport phenomena in the antiferromagnetic Mott insulator NiS₂. Phys. Rev. Mater. 7, 104401 (2023). https://doi.org/10.1103/PhysRevMaterials.7.104401
-
[48]
S., Egilmez, M., Hamdan, N., Mustafa, F., Jung, J., Chow, K
Alagoz, H. S., Egilmez, M., Hamdan, N., Mustafa, F., Jung, J., Chow, K. H. & El-Khatib, S. Weak antilocalization and sign inversion of magnetoresistance in CaRuO₃ epitaxial films. Appl. Phys. Lett. 124, 251902 (2024). https://doi.org/10.1063/5.0197630
-
[49]
Du, X., Tsai, S.-W., Maslov, D. L. & Hebard, A. F. Metal–insulator–like behavior in semimetallic bismuth and graphite. Phys. Rev. Lett. 94, 166601 (2005). https://doi.org/10.1103/PhysRevLett.94.166601
-
[50]
2020 roadmap on plasma accelera- tors,
Fauqué, B., Vignolle, B., Proust, C., Issi, J.-P . & Behnia, K. Electronic instability in bismuth far beyond the quantum limit. New J. Phys. 11, 113012 (2009). https://doi.org/10.1088/1367- 2630/11/11/113012
-
[51]
Kopelevich, Y ., Torres, J. H. S., da Silva, R. R., Mrowka, F., Kempa, H. & Esquinazi, P. Reentrant metallic behavior of graphite in the quantum limit. Phys. Rev. Lett. 90, 156402 (2003). https://doi.org/10.1103/PhysRevLett.90.156402
-
[52]
V . L. Nguyen, B. Z. Spivak, and B. I. Shklovskii, Tunnel hopping in disordered systems, Sov. Phys. JETP 62(5), 1021–1029 (1985)
1985
-
[53]
Sivan, U., Entin -Wohlman, O. & Imry, Y . Orbital magnetoconductance in the variable -range- hopping regime. Phys. Rev. Lett. 60, 1566 –1569 (1988). https://doi.org/10.1103/PhysRevLett.60.1566
-
[54]
Entin-Wohlman, O., Imry, Y . & Sivan, U. Orbital magnetoconductance in the variable -range- hopping regime. Phys. Rev. B 40, 8342–8348 (1989). https://doi.org/10.1103/PhysRevB.40.8342
-
[55]
Mott, N. F. & Davis, E. A. Electronic processes in non -crystalline materials (Clarendon Press, Oxford, 1979)
1979
-
[56]
Rifliková, M., Martonák, R. & Tosatti, E. Pressure -induced gap closing and metallization of MoSe₂ and MoTe₂. Phys. Rev. B 90, 035108 (2014). https://doi.org/10.1103/PhysRevB.90.035108
-
[57]
F. C. Chen, Luo, X., Xiao, R. C., Lu, W. J., Zhang, B., Yang, H. X., Li, J. Q., Pei, Q. L., Shao, D. F. & Zhang, R. R. Superconductivity enhancement in the S -doped Weyl semimetal candidate MoTe₂. Appl. Phys. Lett. 108, 162601 (2016). https://doi.org/10.1063/1.4947433
-
[58]
Metal–insulator transitions, 1st edn (Taylor & Francis, London, 1990)
Mott, N. Metal–insulator transitions, 1st edn (Taylor & Francis, London, 1990)
1990
-
[59]
Sergeev, S. M. & Mitin, V . V . Deformation electron –phonon coupling in disordered semiconductors and nanostructures. Phys. Rev. Lett. 94, 136602 (2005). https://doi.org/10.1103/PhysRevLett.94.136602
-
[60]
Sergeev, S. M. & Mitin, V . V . Effect of boundaries and impurities on electron–phonon dephasing. Superlattices Microstruct. 27, 231–240 (2000). https://doi.org/10.1006/spmi.2000.0867
-
[61]
Zala, T., Narozhny, A. V . & Aleiner, I. L. Interaction corrections at intermediate temperatures: longitudinal conductivity and kinetic equation. Phys. Rev. B 64, 214204 (2001). https://doi.org/10.1103/PhysRevB.64.214204 18
-
[62]
Lin, J. J. & Bird, J. P. Recent experimental studies of electron dephasing in metal and semiconductor mesoscopic structures. J. Phys.: Condens. Matter 14, R501 –R596 (2002). https://doi.org/10.1088/0953-8984/14/18/201
-
[63]
Puica, I. & Lang, W. Critical fluctuation conductivity in layered superconductors in a strong electric field. Phys. Rev. B 68, 054517 (2003). https://doi.org/10.1103/PhysRevB.68.054517
-
[64]
Liu, M., Zhang, J., Chang, C.-Z., Zhang, Z., Feng, X., Li, K., He, K., Wang, L.-L., Chen, X., Dai, X., Fang, Z., Xue, Q.-K., Ma, X. & Wang, Y . Crossover between weak antilocalization and weak localization in a magnetically doped topological insulator. Phys . Rev. Lett. 108, 036805 (2012). https://doi.org/10.1103/PhysRevLett.108.036805
-
[65]
Hikami, S., Larkin, A. I. & Nagaoka, Y . Spin–orbit interaction and magnetoresistance in the two- dimensional random system. Prog. Theor. Phys. 63, 707 –710 (1980). https://doi.org/10.1143/PTP .63.707
work page doi:10.1143/ptp 1980
-
[66]
Theory of negative magnetoresistance in three -dimensional systems
Kawabata, A. Theory of negative magnetoresistance in three -dimensional systems. Solid State Commun. 34, 431 –432 (1980). https://doi.org/10.1016/0038-1098(80)90644-4; & J. Phys. Soc. Jpn. 49, 628 (1980) FIG. 1. 19 FIG. 2. 20 FIG. 3. 21
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