Gate voltage and light together tune the resistance of an LSMO film by about ±7.5% at 300 K, and an interfacial LTO layer reveals separate mechanisms: photoinduced spin disorder, interfacial charge injection, and oxygen vacancy diffusion.
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Electric field control of photoinduced effect in La$_{0.7}$Sr$_{0.3}$MnO$_3$/LaTiO$_3$/SrTiO$_3$ heterostructure
Gate voltage and light together tune the resistance of an LSMO film by about ±7.5% at 300 K, and an interfacial LTO layer reveals separate mechanisms: photoinduced spin disorder, interfacial charge injection, and oxygen vacancy diffusion.