Ion irradiation creates van der Waals planar defects in MnBi2Te4 that reduce magnetic anisotropy and suppress anomalous Hall effect by over an order of magnitude while preserving antiferromagnetic order and partial crystallinity.
Topological insulator materials.J
3 Pith papers cite this work. Polarity classification is still indexing.
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Increasing Te substitution in Bi2(Se1-xTex)3 lowers the Dirac point binding energy and bulk DOS, producing a metallic-to-semiconducting resistivity transition with surface-state dominance at high Te.
Relative motion between two Dirac plates with nonlocal interaction induces vacuum excitations and dissipative forces with a velocity threshold via perturbative effective action.
citing papers explorer
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Disorder-driven symmetry suppression by van der Waals planar defects in a magnetic topological insulator
Ion irradiation creates van der Waals planar defects in MnBi2Te4 that reduce magnetic anisotropy and suppress anomalous Hall effect by over an order of magnitude while preserving antiferromagnetic order and partial crystallinity.
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Chemical tuning of electronic and transport properties of the Bi-Se-Te family of topological insulators
Increasing Te substitution in Bi2(Se1-xTex)3 lowers the Dirac point binding energy and bulk DOS, producing a metallic-to-semiconducting resistivity transition with surface-state dominance at high Te.
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Motion-driven quantum dissipation in an open electronic system with nonlocal interaction
Relative motion between two Dirac plates with nonlocal interaction induces vacuum excitations and dissipative forces with a velocity threshold via perturbative effective action.