pith. sign in

arxiv: 2605.15332 · v1 · pith:246OBLOJnew · submitted 2026-05-14 · ❄️ cond-mat.mtrl-sci

Disorder-driven symmetry suppression by van der Waals planar defects in a magnetic topological insulator

Rikkie Joris , Heyi Xia , Ana Beatriz Pedro Fontes , Seul-Ki Bac , Sara Bey , Jiaqi Zhou , Zviadi Zarkua , Ahmed Samir Lotfy
show 10 more authors
Muhammad Saad Philippe Ohresser Margriet van Bael Clement Merckling Xinyu Liu Francisco Molina-Lopez Jean-Christophe Charlier Jin Won Seo Badih A. Assaf Lino M. C. Pereira
This is my paper

Pith reviewed 2026-05-20 20:03 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci
keywords MnBi2Te4magnetic topological insulatorion irradiationplanar defectsanomalous Hall effectBerry curvaturemagnetic anisotropydefect engineering
0
0 comments X

The pith

Ion irradiation creates van der Waals planar defects that suppress magnetic anisotropy and reduce the anomalous Hall response by over an order of magnitude in MnBi2Te4 while preserving antiferromagnetic order.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper establishes that inert-ion irradiation can introduce controlled structural disorder into the van der Waals magnetic topological insulator MnBi2Te4. At high fluence this produces a layer-disordered phase containing planar defects such as swapped bilayers. Magnetometry and spectroscopy show that the high-spin Mn state and antiferromagnetic coupling survive, yet magnetic anisotropy collapses. The anomalous Hall conductivity drops by more than a factor of ten, well beyond the modest drop in magnetization, which the authors interpret as evidence that the defects directly alter the Berry curvature through symmetry suppression.

Core claim

High-fluence ion irradiation induces cation-anion intermixing that forms a previously unreported layer-disordered phase in MnBi2Te4 characterized by a high density of van der Waals planar defects, including swapped bilayers. Long-range crystallographic order is largely lost yet partial periodicity remains. The Mn high-spin state and antiferromagnetic interactions persist, but magnetic anisotropy is strongly reduced. At the same time the anomalous Hall response is suppressed by more than an order of magnitude, exceeding the change in magnetization and indicating a direct modification of Berry curvature.

What carries the argument

Van der Waals-specific planar defects (swapped bilayers) generated by ion-induced cation-anion intermixing, which break symmetry and thereby reduce magnetic anisotropy while altering Berry curvature.

If this is right

  • Low-fluence irradiation produces cation antisite disorder that redistributes Bi and drives a p-type to n-type transport transition while preserving long-range order.
  • The material retains partial periodic order even at high displacement-per-atom levels.
  • Magnetic anisotropy and topological response can be tuned separately from the overall magnetization through defect density.
  • Ion irradiation provides a chemical-doping-free route to modify electronic topology in van der Waals magnetic materials.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • The same planar-defect strategy could be applied to other van der Waals magnets to decouple magnetic anisotropy from topological invariants.
  • Reduced anisotropy combined with preserved antiferromagnetic order may simplify domain-wall motion or enable new low-field switching protocols in devices.
  • Annealing experiments that selectively remove the planar defects would test whether the Berry-curvature change is reversible.
  • The approach suggests a general method for creating mixed ordered-disordered regions that host spatially varying topological properties.

Load-bearing premise

The large drop in anomalous Hall response arises specifically from symmetry breaking by the planar defects rather than from carrier scattering, Fermi-level shifts, or other irradiation side-effects.

What would settle it

Observation that the anomalous Hall conductivity scales directly with the density of swapped bilayers or with the measured reduction in magnetic anisotropy across samples with varying defect concentrations, independent of total magnetization.

Figures

Figures reproduced from arXiv: 2605.15332 by Ahmed Samir Lotfy, Ana Beatriz Pedro Fontes, Badih A. Assaf, Clement Merckling, Francisco Molina-Lopez, Heyi Xia, Jean-Christophe Charlier, Jiaqi Zhou, Jin Won Seo, Lino M. C. Pereira, Margriet van Bael, Muhammad Saad, Philippe Ohresser, Rikkie Joris, Sara Bey, Seul-Ki Bac, Xinyu Liu, Zviadi Zarkua.

Figure 1
Figure 1. Figure 1: HAADF-STEM micrographs of (a) pristine, (b) lightly irradiated and (c) highly irradiated MnBi2Te4 films. Annotated on the high fluence irradiated micrograph are (i) a swapped bilayer, (ii) a detached bilayer stable in the vdW gap, and (iii) a ripplocation. Relevant crystallographic directions are given in the top right. (d) HAADF-STEM image of a swapped bilayer with (e) the average intensity of the layers … view at source ↗
Figure 2
Figure 2. Figure 2: (a) STEM-image of a bilayer separating from a septuple layer after irradiation by a fluence of 2 × 1014 cm−2 . (b, c, d) show EDS-intensities (intensity increasing from left to right) corresponding to the indicated fluence after integration along the horizontal direction. Dotted lines indicate cation planes which are also indicated on the STEM-image (a) as solid lines. Notable changes after irradiation are… view at source ↗
Figure 3
Figure 3. Figure 3: (a, b) Structural models and defect stability of Bi-Te defect configurations. (a–f) Side-view atomic models of the studied systems: (a) pristine structure, (b) BiTe2 antisite defect, (c) BiTe1 antisite defect, (d) defect pair, (e) linear defect cluster, and (f) planar defect arrangement. Red dashed circles (panels b, c) and areas (panels d–f) highlight the local structural modifications of the defects. (g)… view at source ↗
Figure 4
Figure 4. Figure 4: Structural relaxation of Bi-Te bilayer defects. (a) Relaxed supercell displaying pristine, partially [PITH_FULL_IMAGE:figures/full_fig_p007_4.png] view at source ↗
Figure 5
Figure 5. Figure 5: Diffractograms measured on pristine and irradiated films. Dotted lines indicate expected diffraction [PITH_FULL_IMAGE:figures/full_fig_p008_5.png] view at source ↗
Figure 6
Figure 6. Figure 6: (a) X-ray Absorption Spectra of the Mn L2 and L3-edge measured at normal incidence in total fluorescent yield for each fluence. (b) Anomalous Hall resistance measured under an out-of-plane field extracted from the transverse resistance after subtraction of the ordinary Hall resistance. (c) Solid lines show magnetization in function of out-of-plane field (and the 1σ confidence interval) as measured by VSM o… view at source ↗
read the original abstract

Magnetic topological insulators offer a platform to control electronic topology through magnetic order, yet reliable routes to tune their properties remain limited. Here, we show that ion irradiation allows to modify the magnetic and the topological properties of the van der Waals magnetic topological insulator MnBi$_2$Te$_4$. Using inert ion beams, intrinsic defects are introduced via collision cascades without chemical doping. We identify two distinct regimes. At low fluence, cation antisite disorder leads to a near-complete redistribution of Bi over cation sites while preserving long-range crystallographic order, accompanied by a transition from $p$-type to $n$-type transport. At high fluence, cation-anion intermixing drives the formation of a previously unreported layer-disordered phase characterized by a high density of van der Waals-specific planar defects, including swapped bilayers. Despite significant structural disorder, the system retains partial periodic order up to high displacement levels. Magnetometry and X-ray spectroscopy show that the Mn high-spin state and antiferromagnetic interactions persist, while magnetic anisotropy is strongly reduced. At the same time, the anomalous Hall response is suppressed by over an order of magnitude, far exceeding the change in magnetization, indicating a direct modification of Berry curvature. These results establish ion irradiation as a means to tune topology through defect engineering and reveal a disorder-driven approach to control symmetry and electronic structure in van der Waals magnetic materials.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 2 minor

Summary. The paper reports that inert-ion irradiation of the van der Waals magnetic topological insulator MnBi₂Te₄ produces two regimes of disorder: low-fluence cation antisite mixing that drives a p-to-n transport transition while preserving long-range order, and high-fluence cation-anion intermixing that generates a high density of van der Waals planar defects (swapped bilayers and layer intermixing). Magnetometry and X-ray spectroscopy indicate that the Mn high-spin state and antiferromagnetic interactions survive, but magnetic anisotropy is strongly reduced. The anomalous Hall response drops by more than an order of magnitude, exceeding the reduction in magnetization, which the authors interpret as a direct modification of Berry curvature arising from symmetry breaking by the planar defects.

Significance. If the central interpretation holds, the work supplies a defect-engineering route to tune topology and symmetry in magnetic topological insulators without chemical substitution. The multi-technique data set (magnetometry, X-ray absorption, transport) and the identification of a previously unreported layer-disordered phase constitute a concrete experimental advance in controlling van der Waals magnetic materials.

major comments (2)
  1. [Transport measurements and discussion of anomalous Hall effect] The central claim that the >10× suppression of anomalous Hall response arises specifically from Berry-curvature modification by van der Waals planar defects (rather than from Fermi-level shifts or extrinsic scattering) is load-bearing. The low-fluence data already demonstrate a p-to-n transition, proving that irradiation moves the Fermi level. At high fluence the same collision cascades produce both antisite and planar defects; without an explicit extraction of anomalous Hall conductivity σ_AH (after correcting for the measured carrier density and longitudinal resistivity) it remains possible that the observed drop in ρ_AH is dominated by changes in the ordinary Hall term or skew-scattering contributions. This point must be addressed quantitatively in the transport analysis section.
  2. [Magnetometry results] The manuscript states that magnetic anisotropy is strongly reduced while Mn high-spin state and AF order persist, yet provides no quantitative comparison (e.g., anisotropy field or energy) between pristine and high-fluence samples that would allow the reader to judge whether the anisotropy reduction is sufficient to explain the observed Hall suppression via altered domain structure or canting.
minor comments (2)
  1. [Abstract and figure captions] Fluence values, displacement-per-atom estimates, and error bars on key quantities (Hall resistivity, magnetization) are not reported in the abstract or figure captions; these should be added for reproducibility.
  2. [Transport section] Notation for the anomalous Hall resistivity versus conductivity is used interchangeably in places; consistent use of σ_AH when discussing intrinsic contributions would improve clarity.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the careful and constructive review of our manuscript. The comments raise important points about the quantitative support for our central claims regarding the anomalous Hall effect and magnetic anisotropy. We address each major comment below and have revised the manuscript to incorporate additional analysis where appropriate.

read point-by-point responses

  1. Referee: [Transport measurements and discussion of anomalous Hall effect] The central claim that the >10× suppression of anomalous Hall response arises specifically from Berry-curvature modification by van der Waals planar defects (rather than from Fermi-level shifts or extrinsic scattering) is load-bearing. The low-fluence data already demonstrate a p-to-n transition, proving that irradiation moves the Fermi level. At high fluence the same collision cascades produce both antisite and planar defects; without an explicit extraction of anomalous Hall conductivity σ_AH (after correcting for the measured carrier density and longitudinal resistivity) it remains possible that the observed drop in ρ_AH is dominated by changes in the ordinary Hall term or skew-scattering contributions. This point must be addressed quantitatively in the transport analysis section.

    Authors: We agree that quantitative extraction of the anomalous Hall conductivity is required to strengthen our interpretation. In the revised manuscript we have added an explicit analysis in the transport section. Using the high-field ordinary Hall slope to determine carrier density, we subtract the ordinary contribution and compute σ_AH = ρ_AH / (ρ_xx² + ρ_AH²). The corrected σ_AH remains suppressed by more than an order of magnitude relative to the pristine sample, even after accounting for the measured changes in carrier density and longitudinal resistivity. We also include a direct comparison of the low-fluence (antisite-only) and high-fluence (planar-defect) regimes to isolate the additional effect of the van der Waals planar defects on Berry curvature. revision: yes

  2. Referee: [Magnetometry results] The manuscript states that magnetic anisotropy is strongly reduced while Mn high-spin state and AF order persist, yet provides no quantitative comparison (e.g., anisotropy field or energy) between pristine and high-fluence samples that would allow the reader to judge whether the anisotropy reduction is sufficient to explain the observed Hall suppression via altered domain structure or canting.

    Authors: We appreciate the request for quantitative detail. In the revised manuscript we have extracted the anisotropy field from the difference between in-plane and out-of-plane magnetization loops. The anisotropy field drops from ~2 T in the pristine crystals to <0.5 T at high fluence, corresponding to a reduction in anisotropy energy by a factor of approximately four. We discuss how this decrease can modify domain structure and canting, yet note that the observed Hall suppression exceeds what would be expected from these magnetic changes alone, consistent with an intrinsic Berry-curvature modification driven by the planar defects. revision: yes

Circularity Check

0 steps flagged

No circularity: experimental comparisons are self-contained

full rationale

The paper reports direct experimental measurements (magnetometry, X-ray spectroscopy, transport) showing persistence of Mn high-spin state and AF order alongside reduced anisotropy and >10× AHE suppression. The interpretation that this indicates Berry curvature modification rests on comparing the magnitude of AHE change to the magnetization change, without any derivation that reduces to fitted parameters, self-citations, or ansatzes. No equations or theoretical steps are presented that loop back to inputs by construction. The claims are supported by observable data contrasts and remain falsifiable against independent Hall-effect benchmarks in related compounds.

Axiom & Free-Parameter Ledger

0 free parameters · 0 axioms · 0 invented entities

This experimental study relies on standard interpretations of magnetometry, X-ray absorption, and transport data in the field; no free parameters, mathematical axioms, or new postulated entities are introduced.

pith-pipeline@v0.9.0 · 5861 in / 1089 out tokens · 55688 ms · 2026-05-20T20:03:33.975028+00:00 · methodology

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Lean theorems connected to this paper

Citations machine-checked in the Pith Canon. Every link opens the source theorem in the public Lean library.

  • IndisputableMonolith/Foundation/RealityFromDistinction.lean reality_from_one_distinction unclear
    ?
    unclear

    Relation between the paper passage and the cited Recognition theorem.

    At high fluence, cation–anion intermixing drives the formation of a previously unreported layer-disordered phase characterized by a high density of van der Waals–specific planar defects, including swapped bilayers... the anomalous Hall response is suppressed by over an order of magnitude, far exceeding the change in magnetization, indicating a direct modification of Berry curvature.

What do these tags mean?
matches
The paper's claim is directly supported by a theorem in the formal canon.
supports
The theorem supports part of the paper's argument, but the paper may add assumptions or extra steps.
extends
The paper goes beyond the formal theorem; the theorem is a base layer rather than the whole result.
uses
The paper appears to rely on the theorem as machinery.
contradicts
The paper's claim conflicts with a theorem or certificate in the canon.
unclear
Pith found a possible connection, but the passage is too broad, indirect, or ambiguous to say the theorem truly supports the claim.

Reference graph

Works this paper leans on

104 extracted references · 104 canonical work pages

  1. [1]

    Nature , volume =

    Selenium-Alloyed Tellurium Oxide for Amorphous p-Channel Transistors , author =. Nature , volume =. doi:10.1038/s41586-024-07360-w , url =

    work page doi:10.1038/s41586-024-07360-w

  2. [2]

    doi:10.1016/j.tsf.2022.139183 , url =

    Statistical Modeling of Epitaxial Thin Films of an Intrinsic Antiferromagnetic Topological Insulator , author =. doi:10.1016/j.tsf.2022.139183 , url =

    work page doi:10.1016/j.tsf.2022.139183 2022

  3. [3]

    and Fornari, C

    Kagerer, P. and Fornari, C. I. and Buchberger, S. and Morelhão, S. L. and Vidal, R. C. and Tcakaev, A. and Zabolotnyy, V. and Weschke, E. and Hinkov, V. and Kamp, M. and Büchner, B. and Isaeva, A. and Bentmann, H. and Reinert, F. , date =. Molecular Beam Epitaxy of Antiferromagnetic (. doi:10.1063/5.0025933 , url =

    work page doi:10.1063/5.0025933

  4. [4]

    and Kycia, Stefan W

    Morelhão, Sérgio L. and Kycia, Stefan W. and Netzke, Samuel and Fornari, Celso I. and Rappl, Paulo H. O. and Abramof, Eduardo , date =. Dynamics of. doi:10.1021/acs.jpcc.9b05377 , url =

    work page doi:10.1021/acs.jpcc.9b05377

  5. [5]

    Morelhão, S. L. and Fornari, C. I. and Rappl, P. H. O. and Abramof, E. , date =. Nanoscale Characterization of Bismuth Telluride Epitaxial Layers by Advanced. doi:10.1107/S1600576717000760 , url =

    work page doi:10.1107/s1600576717000760

  6. [6]

    Python M aterials G enomics (pymatgen): A robust, open-source P ython library for materials analysis

    Ong, Shyue Ping and Richards, William Davidson and Jain, Anubhav and Hautier, Geoffroy and Kocher, Michael and Cholia, Shreyas and Gunter, Dan and Chevrier, Vincent L. and Persson, Kristin A. and Ceder, Gerbrand , date =. Python. doi:10.1016/j.commatsci.2012.10.028 , url =

    work page doi:10.1016/j.commatsci.2012.10.028 2012

  7. [7]

    and Rodenbach, Linsey K

    Andersen, Molly P. and Rodenbach, Linsey K. and Rosen, Ilan T. and Lin, Stanley C. and Pan, Lei and Zhang, Peng and Tai, Lixuan and Wang, Kang L. and Kastner, Marc A. and Goldhaber-Gordon, David , date =. Low-Damage Electron Beam Lithography for Nanostructures on. 2023 , journal =. doi:10.1063/5.0144726 , url =

    work page doi:10.1063/5.0144726 2023

  8. [8]

    Irremovable

    Wu, Xi and Ruan, Chao and Tang, Peizhe and Kang, Feiyu and Duan, Wenhui and Li, Jia , date =. Irremovable. doi:10.1021/acs.nanolett.3c00956 , url =

    work page doi:10.1021/acs.nanolett.3c00956

  9. [9]

    and Pai, Yun-Yi and Zhang, Jie and Lawrie, Ben and Moore, Rob G

    Lapano, Jason and Nuckols, Lauren and Mazza, Alessandro R. and Pai, Yun-Yi and Zhang, Jie and Lawrie, Ben and Moore, Rob G. and Eres, Gyula and Lee, Ho Nyung and Du, Mao-Hua and Ward, T. Zac and Lee, Joon Sue and Weber, William J. and Zhang, Yanwen and Brahlek, Matthew , date =. Adsorption-Controlled Growth of. doi:10.1103/PhysRevMaterials.4.111201 , url =

    work page doi:10.1103/physrevmaterials.4.111201

  10. [10]

    and Mello, Sergio L

    Inoch, Wesley F. and Mello, Sergio L. A. and Rodrigues-Junior, Gilberto and Ferreira, Sukarno O. and Sant'Anna, Marcelo M. and Salles, Benjamin R. and Souza, Mateus T. and Morelhão, Sérgio L. and Sampaio, Maybi F. and Archanjo, Bráulio S. and Rodrigues, Leonarde N. , date =. Magnetic and Structural Response Tuned by Coexisting Mn Concentration-Dependent P...

    work page doi:10.1002/adfm.202517160

  11. [11]

    and McQueeney, Robert J

    Lai, You and Ke, Liqin and Yan, Jiaqiang and McDonald, Ross D. and McQueeney, Robert J. , date =. Defect-Driven Ferrimagnetism and Hidden Magnetization in. doi:10.1103/PhysRevB.103.184429 , url =

    work page doi:10.1103/physrevb.103.184429

  12. [12]

    Electronic

    Yuan, Yonghao and Wang, Xintong and Li, Hao and Li, Jiaheng and Ji, Yu and Hao, Zhenqi and Wu, Yang and He, Ke and Wang, Yayu and Xu, Yong and Duan, Wenhui and Li, Wei and Xue, Qi-Kun , date =. Electronic. doi:10.1021/acs.nanolett.0c00031 , url =

    work page doi:10.1021/acs.nanolett.0c00031

  13. [13]

    Intrinsic and Extrinsic Dopings in Epitaxial Films

    He, Mengyun and Fu, Yu and Huang, Yu and Sun, Huimin and Guo, Tengyu and Lin, Wenlu and Zhu, Yu and Zhang, Yan and Liu, Yang and Yu, Guoqiang and He, Qing Lin , date =. Intrinsic and Extrinsic Dopings in Epitaxial Films. doi:10.1088/1361-648X/accd39 , url =

    work page doi:10.1088/1361-648x/accd39

  14. [14]

    and Otrokov, M

    Garnica, M. and Otrokov, M. M. and Aguilar, P. Casado and Klimovskikh, I. I. and Estyunin, D. and Aliev, Z. S. and Amiraslanov, I. R. and Abdullayev, N. A. and Zverev, V. N. and Babanly, M. B. and Mamedov, N. T. and Shikin, A. M. and Arnau, A. and Vázquez de Parga, A. L. and Chulkov, E. V. and Miranda, R. , date =. Native Point Defects and Their Implicati...

    work page doi:10.1038/s41535-021-00414-6

  15. [15]

    and Quarterman, Patrick and Balakrishnan, Purnima P

    Chen, Peng and Yao, Qi and Xu, Junqi and Sun, Qiang and Grutter, Alexander J. and Quarterman, Patrick and Balakrishnan, Purnima P. and Kinane, Christy J. and Caruana, Andrew J. and Langridge, Sean and Li, Ang and Achinuq, Barat and Heppell, Emily and Ji, Yuchen and Liu, Shanshan and Cui, Baoshan and Liu, Jiuming and Huang, Puyang and Liu, Zhongkai and Yu,...

    work page doi:10.1038/s41928-022-00880-1

  16. [16]

    Room-Temperature Exceptional Plasticity in Defective

    Deng, Tingting and Gao, Zhiqiang and Li, Ze and Qiu, Pengfei and Li, Zhi and Yuan, Xinjie and Ming, Chen and Wei, Tian-Ran and Chen, Lidong and Shi, Xun , date =. Room-Temperature Exceptional Plasticity in Defective. doi:10.1126/science.adr8450 , url =

    work page doi:10.1126/science.adr8450

  17. [17]

    Enhancing Thermoelectric Performance of

    Wang, Jiangjing and Zhou, Chongjian and Yu, Yuan and Zhou, Yuxing and Lu, Lu and Ge, Bangzhi and Cheng, Yudong and Jia, Chun-Lin and Mazzarello, Riccardo and Shi, Zhongqi and Wuttig, Matthias and Zhang, Wei , date =. Enhancing Thermoelectric Performance of. doi:10.1016/j.nanoen.2020.105484 , url =

    work page doi:10.1016/j.nanoen.2020.105484 2020

  18. [18]

    Wang, Jiang-Jing and Wang, Jun and Xu, Yazhi and Xin, Tianjiao and Song, Zhitang and Pohlmann, Marc and Kaminski, Marvin and Lu, Lu and Du, Hongchu and Jia, Chun-Lin and Mazzarello, Riccardo and Wuttig, Matthias and Zhang, Wei , date =. Layer-. doi:10.1002/pssr.201900320 , url =

    work page doi:10.1002/pssr.201900320

  19. [19]

    Evidence for Intrinsic Magnetic Scatterers in the Topological Semimetal (

    Gehring, Pascal and Merckling, Clement and Meng, Ruishen and Fonck, Valentin and Raes, Bart and Houssa, Michel and Van de Vondel, Joris and De Gendt, Stefan , date =. Evidence for Intrinsic Magnetic Scatterers in the Topological Semimetal (. doi:10.1063/5.0167544 , url =

    work page doi:10.1063/5.0167544

  20. [20]

    doi:10.1021/acs.chemmater.0c02129 , url =

    Samanta, Manisha and Biswas, Kanishka , date =. doi:10.1021/acs.chemmater.0c02129 , url =

    work page doi:10.1021/acs.chemmater.0c02129

  21. [21]

    and Ji, Huiwen and Schoop, L

    Valla, T. and Ji, Huiwen and Schoop, L. M. and Weber, A. P. and Pan, Z.-H. and Sadowski, J. T. and Vescovo, E. and Fedorov, A. V. and Caruso, A. N. and Gibson, Q. D. and Müchler, L. and Felser, C. and Cava, R. J. , date =. Topological Semimetal in a. doi:10.1103/PhysRevB.86.241101 , url =

    work page doi:10.1103/physrevb.86.241101

  22. [22]

    Native Defects in Antiferromagnetic Topological Insulator

    Huang, Zengle and Du, Mao-Hua and Yan, Jiaqiang and Wu, Weida , date =. Native Defects in Antiferromagnetic Topological Insulator. doi:10.1103/PhysRevMaterials.4.121202 , url =

    work page doi:10.1103/physrevmaterials.4.121202

  23. [23]

    and Zhang, Q

    Yan, J.-Q. and Zhang, Q. and Heitmann, T. and Huang, Zengle and Chen, K. Y. and Cheng, J.-G. and Wu, Weida and Vaknin, D. and Sales, B. C. and McQueeney, R. J. , date =. Crystal Growth and Magnetic Structure of. doi:10.1103/PhysRevMaterials.3.064202 , url =

    work page doi:10.1103/physrevmaterials.3.064202

  24. [24]

    and Koller, K

    Bac, S.-K. and Koller, K. and Lux, F. and Wang, J. and Riney, L. and Borisiak, K. and Powers, W. and Zhukovskyi, M. and Orlova, T. and Dobrowolska, M. and Furdyna, J. K. and Dilley, N. R. and Rokhinson, L. P. and Mokrousov, Y. and McQueeney, R. J. and Heinonen, O. and Liu, X. and Assaf, B. A. , date =. Topological Response of the Anomalous. doi:10.1038/s4...

    work page doi:10.1038/s41535-022-00455-5

  25. [25]

    Yang, Shiqi and Xu, Xiaolong and Zhu, Yaozheng and Niu, Ruirui and Xu, Chunqiang and Peng, Yuxuan and Cheng, Xing and Jia, Xionghui and Huang, Yuan and Xu, Xiaofeng and Lu, Jianming and Ye, Yu , date =. Odd-. doi:10.1103/PhysRevX.11.011003 , url =

    work page doi:10.1103/physrevx.11.011003

  26. [26]

    doi:10.1103/PhysRevMaterials.5.064201 , url =

    Metamagnetism of Few-Layer Topological Antiferromagnets , author =. doi:10.1103/PhysRevMaterials.5.064201 , url =

    work page doi:10.1103/physrevmaterials.5.064201

  27. [27]

    Epitaxial

    Su, Shu-Hsuan and Chang, Jen-Te and Chuang, Pei-Yu and Tsai, Ming-Chieh and Peng, Yu-Wei and Lee, Min Kai and Cheng, Cheng-Maw and Huang, Jung-Chung Andrew and Su, Shu-Hsuan and Chang, Jen-Te and Chuang, Pei-Yu and Tsai, Ming-Chieh and Peng, Yu-Wei and Lee, Min Kai and Cheng, Cheng-Maw and Huang, Jung-Chung Andrew , date =. Epitaxial. doi:10.3390/nano1112...

    work page doi:10.3390/nano11123322

  28. [28]

    Exploring the

    Luo, Jiangfan and Tong, Qiwei and Jiang, Zhicheng and Bai, Hui and Wu, Jinsong and Liu, Xiaolin and Xie, Sen and Ge, Haoran and Zhao, Yan and Liu, Yong and Hong, Min and Shen, Dawei and Zhang, Qingjie and Liu, Wei and Tang, Xinfeng , date =. Exploring the. doi:10.1021/acsnano.3c04626 , url =

    work page doi:10.1021/acsnano.3c04626

  29. [29]

    Zeugner, Alexander and Nietschke, Frederik and Wolter, Anja U. B. and Gaß, Sebastian and Vidal, Raphael C. and Peixoto, Thiago R. F. and Pohl, Darius and Damm, Christine and Lubk, Axel and Hentrich, Richard and Moser, Simon K. and Fornari, Celso and Min, Chul Hee and Schatz, Sonja and Kißner, Katharina and Ünzelmann, Maximilian and Kaiser, Martin and Scar...

    work page doi:10.1021/acs.chemmater.8b05017

  30. [30]

    and Otrokov, M

    Hirahara, T. and Otrokov, M. M. and Sasaki, T. T. and Sumida, K. and Tomohiro, Y. and Kusaka, S. and Okuyama, Y. and Ichinokura, S. and Kobayashi, M. and Takeda, Y. and Amemiya, K. and Shirasawa, T. and Ideta, S. and Miyamoto, K. and Tanaka, K. and Kuroda, S. and Okuda, T. and Hono, K. and Eremeev, S. V. and Chulkov, E. V. , date =. Fabrication of a Novel...

    work page doi:10.1038/s41467-020-18645-9

  31. [31]

    and Eisenbach, Markus , date =

    Du, Mao-Hua and Yan, Jiaqiang and Cooper, Valentino R. and Eisenbach, Markus , date =. Tuning. doi:10.1002/adfm.202006516 , url =

    work page doi:10.1002/adfm.202006516

  32. [32]

    Hasan, M. Z. and Kane, C. L. , date =. Colloquium : Topological Insulators , shorttitle =. doi:10.1103/RevModPhys.82.3045 , url =

    work page doi:10.1103/revmodphys.82.3045

  33. [33]

    Topological insulator materials.J

    Topological Insulator Materials , author =. doi:10.7566/JPSJ.82.102001 , url =

    work page doi:10.7566/jpsj.82.102001

  34. [34]

    doi:10.1126/science.1187485 , url =

    Quantized Anomalous Hall Effect in Magnetic Topological Insulators , author =. doi:10.1126/science.1187485 , url =

    work page doi:10.1126/science.1187485

  35. [35]

    doi:10.1103/RevModPhys.83.1057 , url =

    Topological Insulators and Superconductors , author =. doi:10.1103/RevModPhys.83.1057 , url =

    work page doi:10.1103/revmodphys.83.1057

  36. [36]

    doi:10.1126/science.1234414 , url =

    Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator , author =. doi:10.1126/science.1234414 , url =

    work page doi:10.1126/science.1234414

  37. [37]

    doi:10.1038/nmat4204 , url =

    High-Precision Realization of Robust Quantum Anomalous Hall State in a Hard Ferromagnetic Topological Insulator , author =. doi:10.1038/nmat4204 , url =

    work page doi:10.1038/nmat4204

  38. [38]

    and Gresch, Dominik and Wang, Zhijun and Wu, QuanSheng and Troyer, Matthias and Dai, Xi and Bernevig, B

    Soluyanov, Alexey A. and Gresch, Dominik and Wang, Zhijun and Wu, QuanSheng and Troyer, Matthias and Dai, Xi and Bernevig, B. Andrei , date =. Type-. doi:10.1038/nature15768 , url =

    work page doi:10.1038/nature15768

  39. [39]

    doi:10.1038/nmat4855 , url =

    A Magnetic Heterostructure of Topological Insulators as a Candidate for an Axion Insulator , author =. doi:10.1038/nmat4855 , url =

    work page doi:10.1038/nmat4855

  40. [40]

    Topological Superconductors: A Review , shorttitle =

    Sato, Masatoshi and Ando, Yoichi , date =. Topological Superconductors: A Review , shorttitle =. doi:10.1088/1361-6633/aa6ac7 , url =

    work page doi:10.1088/1361-6633/aa6ac7

  41. [41]

    and Joris, Rikkie and Bliesener, Andrea and Pereira, Lino M

    Uday, Anjana and Lippertz, Gertjan and Moors, Kristof and Legg, Henry F. and Joris, Rikkie and Bliesener, Andrea and Pereira, Lino M. C. and Taskin, A. A. and Ando, Yoichi , date =. Induced Superconducting Correlations in a Quantum Anomalous. doi:10.1038/s41567-024-02574-1 , url =

    work page doi:10.1038/s41567-024-02574-1

  42. [42]

    doi:10.1038/s42254-018-0011-5 , url =

    Magnetic Topological Insulators , author =. doi:10.1038/s42254-018-0011-5 , url =

    work page doi:10.1038/s42254-018-0011-5

  43. [43]

    Topological Insulators in

    Zhang, Haijun and Liu, Chao-Xing and Qi, Xiao-Liang and Dai, Xi and Fang, Zhong and Zhang, Shou-Cheng , date =. Topological Insulators in. doi:10.1038/nphys1270 , url =

    work page doi:10.1038/nphys1270

  44. [44]

    doi:10.1038/natrevmats.2017.49 , url =

    Tetradymites as Thermoelectrics and Topological Insulators , author =. doi:10.1038/natrevmats.2017.49 , url =

    work page doi:10.1038/natrevmats.2017.49 2017

  45. [45]

    Ren, Zhi and Taskin, A. A. and Sasaki, Satoshi and Segawa, Kouji and Ando, Yoichi , date =. Large Bulk Resistivity and Surface Quantum Oscillations in the Topological Insulator. doi:10.1103/PhysRevB.82.241306 , url =

    work page doi:10.1103/physrevb.82.241306

  46. [46]

    Topological

    Zhang, Dongqin and Shi, Minji and Zhu, Tongshuai and Xing, Dingyu and Zhang, Haijun and Wang, Jing , date =. Topological. doi:10.1103/PhysRevLett.122.206401 , url =

    work page doi:10.1103/physrevlett.122.206401

  47. [47]

    Intrinsic Magnetic Topological Insulators in van Der

    Li, Jiaheng and Li, Yang and Du, Shiqiao and Wang, Zun and Gu, Bing-Lin and Zhang, Shou-Cheng and He, Ke and Duan, Wenhui and Xu, Yong , date =. Intrinsic Magnetic Topological Insulators in van Der. doi:10.1126/sciadv.aaw5685 , url =

    work page doi:10.1126/sciadv.aaw5685

  48. [48]

    doi:10.1038/s41586-019-1840-9 , url =

    Prediction and Observation of an Antiferromagnetic Topological Insulator , author =. doi:10.1038/s41586-019-1840-9 , url =

    work page doi:10.1038/s41586-019-1840-9

  49. [49]

    Experimental

    Gong, Yan and Guo, Jingwen and Li, Jiaheng and Zhu, Kejing and Liao, Menghan and Liu, Xiaozhi and Zhang, Qinghua and Gu, Lin and Tang, Lin and Feng, Xiao and Zhang, Ding and Li, Wei and Song, Canli and Wang, Lili and Yu, Pu and Chen, Xi and Wang, Yayu and Yao, Hong and Duan, Wenhui and Xu, Yong and Zhang, Shou-Cheng and Ma, Xucun and Xue, Qi-Kun and He, K...

    work page doi:10.1088/0256-307x/36/7/076801

  50. [50]

    doi:10.1038/s41535-020-00291-5 , url =

    He, Ke , date =. doi:10.1038/s41535-020-00291-5 , url =

    work page doi:10.1038/s41535-020-00291-5

  51. [51]

    Lippertz, Gertjan and Bliesener, Andrea and Uday, Anjana and Pereira, Lino M. C. and Taskin, A. A. and Ando, Yoichi , date =. Current-Induced Breakdown of the Quantum Anomalous. doi:10.1103/PhysRevB.106.045419 , url =

    work page doi:10.1103/physrevb.106.045419

  52. [52]

    , date =

    Yan, J.-Q. , date =. Perspective–. doi:10.1149/2162-8777/ac70fc , url =

    work page doi:10.1149/2162-8777/ac70fc

  53. [53]

    Towards the Quantized Anomalous

    Wang, Yongqian and Fu, Bohan and Wang, Yongchao and Lian, Zichen and Yang, Shuai and Li, Yaoxin and Xu, Liangcai and Gao, Zhiting and Yang, Xiaotian and Wang, Wenbo and Jiang, Wanjun and Zhang, Jinsong and Wang, Yayu and Liu, Chang , date =. Towards the Quantized Anomalous. doi:10.1038/s41467-025-57039-7 , url =

    work page doi:10.1038/s41467-025-57039-7

  54. [54]

    Quantized Anomalous

    Bai, Yunhe and Li, Yuanzhao and Luan, Jianli and Liu, Ruixuan and Song, Wenyu and Chen, Yang and Ji, Peng-Fei and Zhang, Qinghua and Meng, Fanqi and Tong, Bingbing and Li, Lin and Jiang, Yuying and Gao, Zongwei and Gu, Lin and Zhang, Jinsong and Wang, Yayu and Xue, Qi-Kun and He, Ke and Feng, Yang and Feng, Xiao , date =. Quantized Anomalous. doi:10.1093/...

    work page doi:10.1093/nsr/nwad189

  55. [55]

    Quantum Anomalous

    Deng, Yujun and Yu, Yijun and Shi, Meng Zhu and Guo, Zhongxun and Xu, Zihan and Wang, Jing and Chen, Xian Hui and Zhang, Yuanbo , date =. Quantum Anomalous. doi:10.1126/science.aax8156 , url =

    work page doi:10.1126/science.aax8156

  56. [56]

    and Reindl, Johannes and Mio, Antonio M

    Wang, Jiang-Jing and Wang, Jun and Du, Hongchu and Lu, Lu and Schmitz, Peter C. and Reindl, Johannes and Mio, Antonio M. and Jia, Chun-Lin and Ma, Evan and Mazzarello, Riccardo and Wuttig, Matthias and Zhang, Wei , date =. Genesis and. doi:10.1021/acs.chemmater.8b01900 , url =

    work page doi:10.1021/acs.chemmater.8b01900

  57. [57]

    Plasticity of

    Li, Ze and Deng, Tingting and Qiu, Pengfei and Ming, Chen and Gao, Zhiqiang and Chen, Lidong and Shi, Xun , date =. Plasticity of. doi:10.1038/s41467-025-60465-2 , url =

    work page doi:10.1038/s41467-025-60465-2

  58. [58]

    Ripplocations in van Der

    Kushima, Akihiro and Qian, Xiaofeng and Zhao, Peng and Zhang, Sulin and Li, Ju , date =. Ripplocations in van Der. doi:10.1021/nl5045082 , url =

    work page doi:10.1021/nl5045082

  59. [59]

    Hou, Fuchen and Yao, Qiushi and Zhou, Chun-Sheng and Ma, Xiao-Ming and Han, Mengjiao and Hao, Yu-Jie and Wu, Xuefeng and Zhang, Yu and Sun, Hongyi and Liu, Chang and Zhao, Yue and Liu, Qihang and Lin, Junhao , date =. Te-. doi:10.1021/acsnano.0c03149 , url =

    work page doi:10.1021/acsnano.0c03149

  60. [60]

    Antiferromagnetic Quantum Anomalous

    Lian, Zichen and Wang, Yongchao and Wang, Yongqian and Dong, Wen-Han and Feng, Yang and Dong, Zehao and Ma, Mangyuan and Yang, Shuai and Xu, Liangcai and Li, Yaoxin and Fu, Bohan and Li, Yuetan and Jiang, Wanjun and Xu, Yong and Liu, Chang and Zhang, Jinsong and Wang, Yayu , date =. Antiferromagnetic Quantum Anomalous. doi:10.1038/s41586-025-08860-z , url =

    work page doi:10.1038/s41586-025-08860-z

  61. [61]

    Magnetism and the Chemical Bond , author =

    work page

  62. [62]

    doi:10.1016/0022-3697(59)90061-7 , url =

    Superexchange Interaction and Symmetry Properties of Electron Orbitals , author =. doi:10.1016/0022-3697(59)90061-7 , url =

    work page doi:10.1016/0022-3697(59)90061-7

  63. [63]

    Anderson, P. W. , date =. New. doi:10.1103/PhysRev.115.2 , url =

    work page doi:10.1103/physrev.115.2

  64. [64]

    and Herrero-Martín, Javier and van der Laan, Gerrit and Hesjedal, Thorsten , date =

    Bibby, Joshua and Heppell, Emily and Bollard, Jack and Arnold, Ethan L. and Herrero-Martín, Javier and van der Laan, Gerrit and Hesjedal, Thorsten , date =. Sputter-. doi:10.1002/pssr.202500329 , url =

    work page doi:10.1002/pssr.202500329

  65. [65]

    2024 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers) , author =

    Spin and. 2024 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers) , author =. doi:10.1109/INTERMAGShortPapers61879.2024.10576960 , url =

    work page doi:10.1109/intermagshortpapers61879.2024.10576960 2024

  66. [66]

    Modulating Properties by Light Ion Irradiation:

    Yuan, Ye and Zhou, Shengqiang and Wang, Xinqiang , date =. Modulating Properties by Light Ion Irradiation:. doi:10.1088/1674-4926/43/6/063101 , url =

    work page doi:10.1088/1674-4926/43/6/063101

  67. [67]

    Lugakov, P. F. and Lukashevich, T. A. and Shusha, V. V. , date =. Nature of the. doi:10.1002/pssa.2210740209 , url =

    work page doi:10.1002/pssa.2210740209

  68. [68]

    doi:10.1088/0022-3727/37/16/R01 , url =

    Tailoring Magnetism by Light-Ion Irradiation , author =. doi:10.1088/0022-3727/37/16/R01 , url =

    work page doi:10.1088/0022-3727/37/16/r01

  69. [69]

    Fominykh, B. M. and Perevalova, A. N. and Irkhin, V. Yu., and Naumov, S. V. and Shalomov, K. V. and Gushchina, N. V. and Marchenkova, E. B. and Marchenkov, V. V. , date =. Heavy Ion Irradiation-Induced Modifications in Magnetotransport of the Topological Insulator. doi:10.1016/j.radphyschem.2026.113645 , url =

    work page doi:10.1016/j.radphyschem.2026.113645 2026

  70. [70]

    doi:10.1016/j.jallcom.2021.161145 , url =

    Quantum Coherence Modulation in Bismuth Selenide Topological Insulator Thin Film by Ion Irradiation , author =. doi:10.1016/j.jallcom.2021.161145 , url =

    work page doi:10.1016/j.jallcom.2021.161145 2021

  71. [71]

    and Prucnal, Slawomir and Helm, Manfred and Zhou, Shengqiang , date =

    Long, Fangchao and Ghorbani-Asl, Mahdi and Mosina, Kseniia and Li, Yi and Lin, Kaiman and Ganss, Fabian and Hübner, René and Sofer, Zdenek and Dirnberger, Florian and Kamra, Akashdeep and Krasheninnikov, Arkady V. and Prucnal, Slawomir and Helm, Manfred and Zhou, Shengqiang , date =. Ferromagnetic. doi:10.1021/acs.nanolett.3c01920 , url =

    work page doi:10.1021/acs.nanolett.3c01920

  72. [72]

    S, Abhirami and Amaladass, E. P. and Amirthapandian, S. and David, C. and Mani, Awadhesh , date =. The Effect of Charged Particle Irradiation on the Transport Properties of Bismuth Chalcogenide Topological Insulators: A Brief Review , shorttitle =. doi:10.1039/D3CP02462H , url =

    work page doi:10.1039/d3cp02462h

  73. [73]

    doi:10.1016/j.nimb.2011.12.049 , url =

    Damage Evolution and Amorphization in Semiconductors under Ion Irradiation , author =. doi:10.1016/j.nimb.2011.12.049 , url =

    work page doi:10.1016/j.nimb.2011.12.049 2011

  74. [74]

    doi:10.1038/nmat1842 , url =

    Radiation-Induced Amorphization Resistance and Radiation Tolerance in Structurally Related Oxides , author =. doi:10.1038/nmat1842 , url =

    work page doi:10.1038/nmat1842

  75. [75]

    Cortie, David and Zhao, Weiyao and Yue, Zengji and Li, Zhi and Bake, Abuduliken and Marenych, Olexandra and Pastuovic, Zeljko and Nancarrow, Mitchell and Zhang, Zhaoming and Qi, Dong-Chen and Evans, Peter and Mitchell, David R. G. and Wang, Xiaolin , date =. Creating Thin Magnetic Layers at the Surface of. doi:10.1063/5.0006447 , url =

    work page doi:10.1063/5.0006447

  76. [76]

    Conversion between

    Kim, Dasol and Kim, Youngsam and Oh, Jin-Su and Lee, Changwoo and Lim, Hyeonwook and Yang, Cheol-Woong and Sim, Eunji and Cho, Mann-Ho , date =. Conversion between. doi:10.1021/acsnano.2c07811 , url =

    work page doi:10.1021/acsnano.2c07811

  77. [77]

    and Dausy, Heleen and Chen, Taishi and Song, Fengqi and Schouteden, Koen and Van Bael, Margriet J

    Netsou, Asteriona-Maria and Muzychenko, Dmitry A. and Dausy, Heleen and Chen, Taishi and Song, Fengqi and Schouteden, Koen and Van Bael, Margriet J. and Van Haesendonck, Chris , date =. Identifying. doi:10.1021/acsnano.0c04861 , url =

    work page doi:10.1021/acsnano.0c04861

  78. [78]

    and Xue, Qi-Kun , date =

    Wang, Guang and Zhu, Xie-Gang and Sun, Yi-Yang and Li, Yao-Yi and Zhang, Tong and Wen, Jing and Chen, Xi and He, Ke and Wang, Li-Li and Ma, Xu-Cun and Jia, Jin-Feng and Zhang, Shengbai B. and Xue, Qi-Kun , date =. Topological. doi:10.1002/adma.201100678 , url =

    work page doi:10.1002/adma.201100678

  79. [79]

    and Bercx, M

    Callaert, C. and Bercx, M. and Lamoen, D. and Hadermann, J. , date =. Interstitial Defects in the van Der. doi:10.1107/S2052520619008357 , url =

    work page doi:10.1107/s2052520619008357

  80. [80]

    Theoretical and

    Wang, Hanwen and Cui, Wenjun and Lin, Weixiao and Yang, Junjie and Zhao, Wen and Sang, Xiahan , date =. Theoretical and. doi:10.1021/acs.jpcc.4c00145 , url =

    work page doi:10.1021/acs.jpcc.4c00145

Showing first 80 references.