A suspended 4H-SiC membrane platform is demonstrated by patterning devices after photoelectrochemical undercut, yielding 1D photonic cavities with Q in the thousands and a TFLN-on-SiC phononic cavity.
Holes were generated by above bandgap UV illumination (500W Newport Hg/Xe lamp)
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A Suspended 4H-Silicon Carbide Membrane Platform for Defect Integration into Quantum Devices
A suspended 4H-SiC membrane platform is demonstrated by patterning devices after photoelectrochemical undercut, yielding 1D photonic cavities with Q in the thousands and a TFLN-on-SiC phononic cavity.