Monolayer CrC2N4 exhibits a direct band gap at K/K' valleys with 51.9 meV valence-band spin splitting from SOC and strain-tunable gap and optical response from 1.987 to 1.421 eV.
Chemical vapor deposition of layered two-dimensional MoSi2N4 materials
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CrSi2N4 monolayer is stable with 0.58-2.16 eV indirect bandgap, high absorption, 3.5 mW/mK² thermoelectric power factor, and strain-reduced hydrogen adsorption energy to 0.46 eV for better HER.
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Robust Spin Splitting and Strain-Controlled Optical Response in Monolayer CrC2N4 for Valleytronic and Optoelectronic Applications
Monolayer CrC2N4 exhibits a direct band gap at K/K' valleys with 51.9 meV valence-band spin splitting from SOC and strain-tunable gap and optical response from 1.987 to 1.421 eV.
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Strain-Enhanced Hydrogen Evolution, Electrical, Optical, and Thermoelectric Properties of the Multifunctional 2D CrSi2N4 Monolayer
CrSi2N4 monolayer is stable with 0.58-2.16 eV indirect bandgap, high absorption, 3.5 mW/mK² thermoelectric power factor, and strain-reduced hydrogen adsorption energy to 0.46 eV for better HER.