Explicit analytical model for DC characteristics of ultra-thin gate-all-around junctionless nanowire FETs with 2D quantum confinement, validated by TCAD simulations across operating regions.
Charge-Based Model for Ultrathin Junctionless DG FETs, Including Quantum Confinem ent
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An Explicit Model for Ultra-thin Gate-All-Around Junctionless Nanowire FETs, Including 2D Quantum Confinement
Explicit analytical model for DC characteristics of ultra-thin gate-all-around junctionless nanowire FETs with 2D quantum confinement, validated by TCAD simulations across operating regions.